基于量子限制的受主带间跃迁太赫兹探测器的制备与测量

翟剑波; 黄海北; 李素梅; 丛伟艳; 郑卫民

doi:10.3788/fgxb20143508.0986

您当前的位置：

首页 >

文章列表页 >

基于量子限制的受主带间跃迁太赫兹探测器的制备与测量

器件制备及器件物理 | 更新时间：2020-08-12

- 基于量子限制的受主带间跃迁太赫兹探测器的制备与测量
- Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions
- 发光学报 2014年35卷第8期页码：986-991
- 作者机构：
  
  1. 山东大学（威海）空间科学与物理学院,山东威海,264209
  2. 山东大学（威海）机电与信息工程学院,山东威海,264209
- 作者简介：
- 基金信息：
  
  山东省自然科学基金（ZR2012FM028）资助项目()
- DOI：10.3788/fgxb20143508.0986
  中图分类号： TN215
- 收稿日期：2014-04-09，
  
  修回日期：2014-05-25，
  
  纸质出版日期：2014-08-03
- 稿件说明：
移动端阅览
翟剑波, 黄海北, 李素梅等. 基于量子限制的受主带间跃迁太赫兹探测器的制备与测量[J]. 发光学报, 2014,35(8): 986-991

ZHAI Jian-bo, HUANG Hai-bei, LI Su-mei etc. Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions[J]. Chinese Journal of Luminescence, 2014,35(8): 986-991
翟剑波, 黄海北, 李素梅等. 基于量子限制的受主带间跃迁太赫兹探测器的制备与测量[J]. 发光学报, 2014,35(8): 986-991 DOI： 10.3788/fgxb20143508.0986.

ZHAI Jian-bo, HUANG Hai-bei, LI Su-mei etc. Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions[J]. Chinese Journal of Luminescence, 2014,35(8): 986-991 DOI： 10.3788/fgxb20143508.0986.

摘要

使用分子束外延生长设备，在GaAs（100）衬底上生长了量子阱宽度为3 nm的GaAs/AlAs多量子阱样品，并在量子阱层中央进行了Be受主的-掺杂。根据量子限制受主从束缚态到非束缚态之间的跃迁，设计并制备了-掺杂Be受主GaAs/AlAs多量子阱太赫兹光探测器原型器件。在4.2 K温度下，分别对器件进行了太赫兹光电流谱和暗电流-电压曲线的测量。在6 V直流偏压下，空穴载流子沿量子阱层方向输运。当正入射激光频率为6.8 THz时，器件响应率为210

-4

V/W（2 A/W）。通过器件的暗电流-电压曲线计算了器件全散粒噪声电流，在4.2 K、6 V直流偏压下，全散粒噪声电流为5.03 fAHz

-1/2

。

Abstract

3 nm well-width GaAs/AlAs multiple-quantum wells were grown by molecular beam epitaxy with Be acceptors -doped at quantum-well center on a semi-insulating GaAs (100) substrate. According to the transitions from bound to unbound states of quantum-confined acceptors

the terahertz prototype photodetector based Be acceptors-doped GaAs/AlAs multiple-quantum wells was designed and fabricated. The terahertz photocurrent spectrum and dark current-voltage characteristics of the device were measured at 4.2 K

respectively. Under a bias of 6 V and the normal incidence of a 6.8 THz laser

the hole carriers transport along quantum well layers

and the photodetector responsivity is 210

-4

V/W (2 A/W). According to the

I-V

curves measured at 4.2 K

the device full-shot noise current was calculated. It is 5.03 fAHz

-1/2

with a bias of 6 V.

关键词

Keywords

references

Guo X G, Gu L L, Dong M, et al. Negative differential resistance induced by thermalization of two-dimensional electrons in terahertz quantum-well photodetectors [J]. J. Appl. Phys., 2013, 113(20):203109-1-4.

Ferr S, Razavipour S G, Ban D. Terahertz quantum well photodetectors with improved designs by exploiting many-body effects [J]. Appl. Phys. Lett., 2013, 103(8):081105-1-4.

Kajihara Y, Nakajima T, Wang Z, et al. Terahertz single-photon detectors based on quantum wells [J]. J. Appl. Phys., 2013, 113(13):136506-1-5.

Sudradjat F F, Zhang W, Woodward J, et al. Far-infrared intersubband photodetectors based on double-step Ⅲ-nitride quantum wells [J]. Appl. Phys. Lett., 2013, 100(24):241113-1-4.

Liu J, Zheng W M, Song Y X, et al. Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors [J]. Acta Phys. Sinica (物理学报), 2010, 59(4):2728-2733 (in Chinese).

Zheng W M, Lu Y B, Song S M, et al. Photoluminescence study of the acceptor binding energy in GaAs/AlAs quantum wells [J]. Chin. J. Lumin.(发光学报), 2008, 29(1):156-160 (in Chinese).

Seliuta D, Kavaliauskas J, ?echavi ? ius B, et al. Impurity bound-to-unbound terahertz sensors based on beryllium and silicon -doped GaAs/AlAs multiple quantum wells [J]. Appl. Phys. Lett., 2008, 92(5):053503-1-3.

Liu H C. Photoconductive gain mechanism of quantum-well intersubband infrared detectors [J]. Appl. Phys. Lett., 1992, 60(6):1507-1509.

Levine B F. Quantum-well infrared photodetectors [J]. J. Appl. Phys., 1993, 74(15):R1-R81.

Goldberg A, Choi K K, Cho E, et al. Laboratory and field performance of megapixel QWIP focal plane arrays [J]. Infrared Phys. Technol., 2005, 47(1-2):91-105.

Cao J C. Terahertz semiconductor detector [J]. Physics (物理), 2006, 35(11):953-956 (in Chinese).

Graf M, Scalari G, Hofstetter D, et al. Terahertz range quantum well infrared photodetector [J]. Appl. Phys. Lett., 2004, 84(4):475-477.

Liu H C, Song C Y, SpringThorpe A J, et al. Terahertz quantum-well photodetector [J]. Appl. Phys. Lett., 2004, 84(20):4068-4070.

Ting D Z Y, Chang Y C, Bandara S V, et al. Quantum well intrasubband photodetector for far infrared and terahertz radiation detection [J]. Appl. Phys. Lett., 2007, 91(7):073510-1-3.

Masselink W T, Chang Y C, Morkoc H. Acceptor spectra of AlxGa1-xAs-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress [J]. Phys. Rev. B, 1985, 32(8):5190-5200.

Reeder A A, McCombe B D, Chambers F A, et al. Far-infrared study of confinement effects on acceptors in GaAs/AlxGa1-xAs quantum wells [J]. Phys. Rev. B, 1988, 38(6):4318-4321.

Zheng W M, Halsall M P, Harmer P, et al. Effect of quantum confinement on shallow acceptor transitions in -doped GaAs/AlAs multiple-quantum wells [J]. Appl. Phys. Lett., 2004, 84(5):735-737.

Zheng W M, Halsall M P, Harmer P, et al. Acceptor binding energy in -doped GaAs/AlAs multiple-quantum wells [J]. J. Appl. Phys., 2002, 92(10):6039-6042.

Zheng W M, Halsall M P, Harmer P, et al. Far-infrared absorption studies of Be acceptors in -doped GaAs/AlAs multiple quantum wells [J]. Sci. China Ser. G, 2006, 49(6):702-708.

Kirkman R F, Stradling R A, Lin-Chung P J. An infrared study of the shallow acceptor states in GaAs [J]. J. Phys. C, 1978, 11(2):419-433.

Zussman A, Levine B F, Kuo J M, et al. Extended long-wavelength =11-15-m GaAs/AlxGa1-xAs quantum-well infrared photodetectors [J]. J. Appl. Phys., 1991, 70(9):5101-5107.

Janousek B K, Daugherty M J, Bloss W L, et al. High-detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 m [J]. J. Appl. Phys., 1990, 67(12):7608-7611.

浏览量

160

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

δ-掺杂Be受主GaAs/AlAs多量子阱的空穴共振隧穿

δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响

高灵敏度InAs/AlSb量子阱的霍尔器件