高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高

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高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高

器件制备及器件物理 | 更新时间：2020-08-12

- 高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高
- Improvement of GaN Thin-film Quality Grown on Patterned Sapphire Substrate by High-temperature Pre-growth Treatment
- 发光学报 2014年35卷第8期页码：980-985
- 作者机构：
  
  1. 华南理工大学理学院物理系广东省光电工程技术研究开发中心,广东广州,510640
  2. 鹤山丽得电子实业有限公司, 广东鹤山,529728
- 作者简介：
- 基金信息：
  
  国家高技术研究发展计划（863计划）（2014AA032609）();广东省战略性新兴产业发展专项资金（2010A081002009，2012A080302003）()
- DOI：10.3788/fgxb20143508.0980
  中图分类号： TN303;TN304
- 收稿日期：2014-04-29，
  
  修回日期：2014-05-20，
  
  纸质出版日期：2014-08-03
- 稿件说明：
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黄华茂, 杨光, 王洪等. 高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高[J]. 发光学报, 2014,35(8): 980-985

HUANG Hua-mao, YANG Guang, WANG Hong etc. Improvement of GaN Thin-film Quality Grown on Patterned Sapphire Substrate by High-temperature Pre-growth Treatment[J]. Chinese Journal of Luminescence, 2014,35(8): 980-985
黄华茂, 杨光, 王洪等. 高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高[J]. 发光学报, 2014,35(8): 980-985 DOI： 10.3788/fgxb20143508.0980.

HUANG Hua-mao, YANG Guang, WANG Hong etc. Improvement of GaN Thin-film Quality Grown on Patterned Sapphire Substrate by High-temperature Pre-growth Treatment[J]. Chinese Journal of Luminescence, 2014,35(8): 980-985 DOI： 10.3788/fgxb20143508.0980.

摘要

在图形化蓝宝石衬底生长低温缓冲层之前，通入少量三甲基镓（TMGa）和大量氨气进行短时间的高温预生长，通过改变TMGa流量制备了4个蓝光LED样品。MOCVD外延生长时使用激光干涉仪实时监测薄膜反射率，外延片使用高分辨率X射线衍射（002）面和（102）面摇摆曲线估算位错密度，并使用光致发光谱表征发光性能，制备成芯片后测试了正向电压和输出光功率。结果表明，高温预生长可促进薄膜的横向外延，使得三维岛状GaN晶粒在较小的薄膜厚度内实现岛间合并，有利于降低位错密度，提高外延薄膜质量，LED芯片的输出光功率的增强幅度达29.1%，而电学性能无恶化迹象;但高温预生长工艺中TMGa的流量应适当控制，过量的TMGa导致GaN晶粒过大，将延长岛间合并时间，降低晶体质量。

Abstract

Before the epitaxy of low-temperature buffer layer

the patterned sapphire substrate was prepared by a pre-growth treatment at a high temperature under a small amount of trimethyl gallium (TMGa) and a great quantity of ammonia (NH

3

). Four types of blue light-emitting diode (LED) wafers were fabricated using different flow-rate of TMGa. The laser interferometer in MOCVD was used to monitor the thin-film reflectance during the epitaxial growth process. The high-resolution X-ray diffraction rocking curves of (002) and (102) crystal faces were utilized to estimate the threading dislocation density. The photoluminescence spectra were measured to feature the light-output performance. Moreover

LED chips were fabricated and tested. It is shown that the pre-growth treatment benefits the lateral growth of three-dimensional GaN islands in epitaxy process and leads to fast coalescence within a small thickness. Thus

the threading dislocation can be suppressed and the quality of epitaxial film would be improved. The enhancement of light-output power of LED chips can be up to 29.1% without degradation of electrical performance. However

the flow rate of TMGa should be tuned carefully

because excess quantity of TMGa would cause a large size of GaN grain crystal

which induces delayed coalescence time and low-quality of epitaxial film.

关键词

Keywords

references

Han N, Park Y J, Han M, et al. Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres [J]. Mater. Lett., 2014, 123:97-100.

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Lee J H, Lee D Y, Oh B W, et al. Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate [J]. IEEE Trans. Electron. Dev., 2010, 57(1):157-163.

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