基于腔面非注入区的半导体激光器的热特性分析

王胜楠; 薄报学; 许留洋; 杜洋; 乔忠良; 高欣

doi:10.3788/fgxb20143508.0969

您当前的位置：

首页 >

文章列表页 >

基于腔面非注入区的半导体激光器的热特性分析

器件制备及器件物理 | 更新时间：2020-08-12

- 基于腔面非注入区的半导体激光器的热特性分析
- Thermal Analysis on Semiconductor Laser with Non-injection Region
- 发光学报 2014年35卷第8期页码：969-973
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61176048，61177019，61308051）();吉林省科技发展计划（20120361，20130206016GX）资助项目()
- DOI：10.3788/fgxb20143508.0969
  中图分类号： TN248.4
- 收稿日期：2014-04-13，
  
  修回日期：2014-06-19，
  
  纸质出版日期：2014-08-03
- 稿件说明：
移动端阅览
王胜楠, 薄报学, 许留洋等. 基于腔面非注入区的半导体激光器的热特性分析[J]. 发光学报, 2014,35(8): 969-973

WANG Sheng-nan, BO Bao-xue, XU Liu-yang etc. Thermal Analysis on Semiconductor Laser with Non-injection Region[J]. Chinese Journal of Luminescence, 2014,35(8): 969-973
王胜楠, 薄报学, 许留洋等. 基于腔面非注入区的半导体激光器的热特性分析[J]. 发光学报, 2014,35(8): 969-973 DOI： 10.3788/fgxb20143508.0969.

WANG Sheng-nan, BO Bao-xue, XU Liu-yang etc. Thermal Analysis on Semiconductor Laser with Non-injection Region[J]. Chinese Journal of Luminescence, 2014,35(8): 969-973 DOI： 10.3788/fgxb20143508.0969.

摘要

利用Ansys有限元分析软件模拟了宽条形激光器腔面在不同生热率条件下对有源区温度的影响，并对带有腔面非注入区的激光器结构进行了热分析，比较了不同长度的非注入区结构的器件的温度特性。腔面的温升对器件可靠性影响极大，计算结果表明随着非注入区宽度的增加，芯片前腔面有源区的温度明显降低。结果为采用非注入区结构提高COD阈值功率提供了设计参考。

Abstract

The temperature of the active region of the semiconductor laser was simulated by using Ansys with different heat generation on the cavity surface and different width of non-injection regions near cavity surface. The temperature rise of the facet has a great impact on the reliability of the laser. The results indicate that the temperature of the facet can be reduced effectively by the introduction of non-injection region. The temperature drop provides an advantage for suppressing the non-radiation recombination and optics absorption to improve the COD threshold.

关键词

Keywords

references

Zhou L, Wang Y H, Jia B S, et al. Deposition of AlN film for AR coating of semiconductor lasers [J]. Chin. J. Lumin.(发光学报), 2011, 32(12):1292-1296 (in Chinese).

Lambert R W, Ayling T, Hendry A F, et al. Facet-passivation processes for the improvement of Al-containting semiconductor laser diodes [J]. J. Lightwave Technol., 2006, 24(2):956-961.

Zhou L, Bo B X, Wang Y H, et al. Study of 940 nm semiconductor lasers with non-absorb window structure fabricated by impurity-free vacancy disordering [J]. Chin. J. Lasers (中国激光), 2012, 39(8):0802001-1-5 (in Chinese).

Sagawa M, Hiramoto K, Toyonaka T, et al. High power COD-free operation of 0.98 m InGaAs/GaAs/InGaP lasers with non-injection regions near the facets [J]. Electron. Lett., 1994, 30:1410-1411.

Liu B, Zhang J M, Ma X Y, et al. The investigation of 980 nm ridge waveguide lasers with current non-injection regions by proton implantation [J]. Laser & Infrared (激光与红外), 2003, 33(2):109-111 (in Chinese).

Zhang S Z, Yang H W, Hua J Z, et al. High power laser diode with non-injection regions near the facet [J].Nanoelectron. Dev. Technol.(纳米电子器件与技术), 2009, 26(5):270-273 (in Chinese).

Liu B, Zhang J M, Ma X Y, et al. Investigation of 980 ridge waveguide lasers with current non-injection regions by He ion implantation [J]. Chin. J. Semicond.(半导体学报), 2003, 24(3):234-237 (in English).

Lin T, Duan Y P, Zheng K, et al. High power 657 nm laser diodes with nonaborbing windows [J]. Chin. J. Lasers (中国激光), 2009, 36(1):104-109 (in Chinese).

Xia W, Ma D Y, Wang L, et al. High power 650 nm red semiconductor laser with transparent window [J]. Chin. J. Lasers (中国激光), 2007, 34(9):1182-1184 (in Chinese).

浏览量

160

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

高功率1 150 nm垂直外腔面发射半导体激光器

基于束腰劈裂偏振合束高亮度窄线宽半导体激光器

970 nm高功率光栅外腔可调谐半导体激光器

低温808 nm高效率半导体激光器

侧向微结构宽脊波导分布反馈1.06 μm半导体激光器