AlGaInP-LED微阵列单元的热效应分析

田超; 梁静秋; 梁中翥; 秦余欣; 李春; 吕金光; 王维彪

doi:10.3788/fgxb20143507.0840

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AlGaInP-LED微阵列单元的热效应分析

器件制备及器件物理 | 更新时间：2020-08-12

- AlGaInP-LED微阵列单元的热效应分析
- Thermal Analysis of AlGaInP-LED Mircro-cells
- 发光学报 2014年35卷第7期页码：840-845
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春,130022
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61274122）();吉林省科技发展项目（20100351，20120323）();长春市科技发展计划（12ZX21）资助项目()
- DOI：10.3788/fgxb20143507.0840
  中图分类号： TN312.8
- 收稿日期：2014-03-12，
  
  修回日期：2014-04-03，
  
  纸质出版日期：2014-07-03
- 稿件说明：
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田超, 梁静秋, 梁中翥等. AlGaInP-LED微阵列单元的热效应分析[J]. 发光学报, 2014,35(7): 840-845

TIAN Chao, LIANG Jing-qiu, LIANG Zhong-zhu etc. Thermal Analysis of AlGaInP-LED Mircro-cells[J]. Chinese Journal of Luminescence, 2014,35(7): 840-845
田超, 梁静秋, 梁中翥等. AlGaInP-LED微阵列单元的热效应分析[J]. 发光学报, 2014,35(7): 840-845 DOI： 10.3788/fgxb20143507.0840.

TIAN Chao, LIANG Jing-qiu, LIANG Zhong-zhu etc. Thermal Analysis of AlGaInP-LED Mircro-cells[J]. Chinese Journal of Luminescence, 2014,35(7): 840-845 DOI： 10.3788/fgxb20143507.0840.

摘要

对AlGaInP-LED微型阵列发光单元的内部自发热机制进行了分析，并通过对具有回型上电极的发光单元的理论分析与计算，得到了其内量子效率与注入电流的变化关系及器件温度与所加偏压的变化关系。为保证内量子效率取值范围大于85%，得到了器件的最佳工作电流和最佳驱动电压范围以及微阵列各层结构在最佳驱动电压下的热阻分布。通过计算得出器件在2.2 V电压下，从p-n结到外部环境的有效热阻为96.7 ℃/W。讨论了减小器件热阻的方法，计算得出在理想情况下，添加热沉结构后有效热阻降为30.6 ℃/W，表明所设计的热沉结构对器件的散热起到了明显的改善作用。

Abstract

The principle of self-heating effect of AlGaInP micro-LED cells was analyzed. By analyzing the temperature distribution of each cell with square-circle electrode

the relationships of the internal quantum efficiency

vs.

anode current and the lattice device temperature

vs.

anode voltage were got. Under 2.2 V driving voltage

the thermal impedance of each layer was calculated and the effective thermal impedance was obtained as 96.7 ℃/W. After adding heat-sink to the device

the thermal impedance of the device with heat-sink structure was as low as 30.6 ℃/W in ideal condition. The results show that the thermal performance can be improved obviously with the designed heat-sink structure.

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references

Gessmann T, Schubert E F. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications [J]. Appl. Phys., 2004, 95(5):2203-2216.

Russell D D, Michael R K. History, development, and apllications of high-brightness visible light-emitting diodes [J]. J. Lightwave Technol., 2008, 26(9):1154-1171.

Bao X Z, Liang J Q, Liang Z Z, et al. Effect of AlGaInP-LED arrays units side-reflection on light output efficiency [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2013, 28(5):726-731 (in Chinese).

Chen N C, Wang Y N, Tseng C Y. Determination of junction temperature in AlGaInP GaAs light emitting diodes by self-exited photoluminescence signal [J]. Appl. Phys. Lett., 2006, 89(10):101114-1-3.

Hong E, Narendran N. A method for projecting useful life of LED lighting systems [J]. SPIE, 2004, 5187:93-99.

Gu Y, Narendran N. A non-contact method for determining junction temperature of phosphor-converted white LEDs [J]. SPIE, 2004, 5187:107-114.

Chen H T, Lv Y J, Chen Z, et al. Analysis of thermal spreading boards for high-power AlGaInP red LEDs [J]. Acta Optica Sinica (光学学报), 2009, 29(3):805-810 (in Chinese).

Ma J S, He L J, Liu T, et al. Design of optical structure for chip-on-board wafer level packaging LEDs [J]. Opt. Precision Eng.(光学精密工程), 2013, 21(4):904-910 (in Chinese).

Yin Y. Design and Fabrication of Micro LED Array Display Device [D]. Changchun: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2012.

Tian C, Liang J Q, Liang Z Z, et al. Design and experiment of AlGaInP mircro-LED arrays with double strip electrode [J]. Chin. J. Lumin.(发光学报), 2013, 34(11):1494-1499 (in Chinese).

Sze S M, Kwok K N G. Physics of Semiconductor Devices [M]. Xian: Xian JiaoTong University Press, 2008:455-465 (in Chinese).

Yu B H, Wang Y H. Junction temperature and thermal resistance restrict the developing of high-power LED [J]. Chin. J. Lumin.(发光学报), 2004, 25(6):761-766 (in Chinese).

Wang Q L, Xia Z Q, Wen J. LED junction temperature, a thermal resistance and its impact [J]. Adv. Disp.(现代显示), 2008, 89(5):59-61 (in Chinese).

Liu E K, Zhu B S, Luo J S. Physics of Semiconductor [M]. Beijing: National Defence Industry Press, 2006:122-123 (in Chinese).

Sze S M. Physics and Technology of Semiconductor Devices [M]. Suzhou: Suzhou University Press, 2002:64-65 (in Chinese).

Zhang F L, Lin X, Liao X, et al. Investigation on the injected current dependence of InGaN blue LEDs quantum efficiency [J]. J. OptoelectronicsLaser (光电子激光), 2009, 20(11):1442-1445 (in Chinese).

Gao D, Liang J Q, Liang Z Z, et al. pn junction characteristic of AlGaInP DH-LED [J]. Chin. J. Lumin.(发光学报), 2013, 34(9):1213-1218 (in Chinese).

Xin R S, Lin Y. Influence of thickness and oxygen content of ITO thin films on its structure and properties [J]. Electronic Components and Materials (电子元件与材料), 2007, 26(7):21-23 (in Chinese).

Shatalov M, Chitins A, Yadav P, et al. Thermal analysis of flip-chip packaged 280nm nitride-based dep ultraviolet light-emitting diodes [J]. Appl. Phys. Lett., 2005, 86(20):201109-1-3.

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