AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响

钟林健; 邢艳辉; 韩军; 陈翔; 朱启发; 范亚明; 邓旭光; 张宝顺

doi:10.3788/fgxb20143507.0830

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AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响
- Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials
- 发光学报 2014年35卷第7期页码：830-834
- 作者机构：
  
  1. 北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室北京,100124
  2. 中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州,215123
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61204011，11204009，61107026，61006084）();国家自然科学基金重点基金（U103760）();北京市自然科学基金（41
- DOI：10.3788/fgxb20143507.0830
  中图分类号： O484
- 收稿日期：2014-03-21，
  
  修回日期：2014-05-11，
  
  网络出版日期：2014-05-09，
  
  纸质出版日期：2014-07-03
- 稿件说明：
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钟林健, 邢艳辉, 韩军等. AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响[J]. 发光学报, 2014,35(7): 830-834

ZHONG Lin-jian, XING Yan-hui, HAN Jun etc. Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials[J]. Chinese Journal of Luminescence, 2014,35(7): 830-834
钟林健, 邢艳辉, 韩军等. AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响[J]. 发光学报, 2014,35(7): 830-834 DOI： 10.3788/fgxb20143507.0830.

ZHONG Lin-jian, XING Yan-hui, HAN Jun etc. Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials[J]. Chinese Journal of Luminescence, 2014,35(7): 830-834 DOI： 10.3788/fgxb20143507.0830.

摘要

利用金属有机化学气相沉积（MOCVD）设备，在蓝宝石（0001）面上外延不同生长时间AlN隔离层的Al

N/AlN/GaN结构的高电子迁移率的晶体管（HEMT），研究了AlN隔离层厚度对HEMT材料电学性能的影响。研究发现采用脉冲法外延（PALE）技术生长AlN隔离层的时间为12 s（1 nm左右）时，HEMT材料的方块电阻最小，电子迁移率为1 500 cm

-1

，二维电子气（2DEG）浓度为1.1610

-2

。AFM测试结果表明，一定厚度范围内的AlN隔离层并不会对材料的表面形貌产生重大的影响。HRXRD测试结果表明，AlGaN/AlN/GaN具有好的异质结界面。

Abstract

AlGaN/AlN/GaN HEMT structures were grown on sapphire substrate by MOCVD with different AlN growing time

and the influence of AlN thickness on electrical properties was investigated. When AlN growth time is about 12 s corresponding to the AlN thickness of 1~1.5 nm

the sample has the best performance of electrical properties with the lowest sheet resistance of 359 sq

-1

the highest 2DEG concentration of 1.1610

-2

and a high 2DEG mobility of

500 cm

-1

. AFM results indicate that AlN layer within a certain thickness range has little influence on the surface morphology. HRXRD results show that AlGaN/AlN/GaN HEMT has a good heterostructure interface.

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Keywords

references

Wang C M, Wang X L, Hu G X, et al. Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure [J]. Appl. Surf. Sci., 2006, 253(2):762-765.

Wang C M, Wang X L, Hu G X, et al. The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures [J]. J. Cryst. Growth, 2006, 289(2):415-418.

Chen X, Xing Y H, Han J, et al. Influence of AlN interfacial layer on electrical properties of AlGaN/AlN/GaN HEMT materials grown by MOCVD [J]. Chin. J. Lasers (中国激光), 2013, 40(6):0606005-1-5 (in Chinese).

Xue J S, Hao Y, Zhang J C, et al. Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers [J]. Sci. China (中国科学), 2010, 53(6):1567-1571 (in Chinese).

Ding G J, Guo L W, Xing Z G, et al. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire [J]. Sci. China (中国科学), 2010, 53(1):49-53 (in Chinese).

Wang X L, Hu G X, Wang C M, et al. MOCVD grown high-mobility AlGaN/AlN/GaN HEMT structure on sapphire substrate [J]. J. Cryst. Growth, 2007, 298(1):791-793.

Dimitrov R, Murphy M, Smart J, et al. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire [J]. J. Appl. Phys., 2000, 87(7):3375-3380.

Baishakhi M, Kaun S W, Lu J, et al. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures [J]. Appl. Phys. Lett., 2013, 102(11):111603-1-5.

Kawakami Y, Shimizu M, Nakanishi H, et al. Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers [J]. J. Cryst. Growth, 2007, 300(1):168-171.

Kawakami Y, Shimizu M, Nakanishi H, et al. Improved electrical properties in AlGaN/GaN heterostructures using AlN/GaN superlattice as a quasi-AlGaN barrier [J]. Appl. Phys. Lett., 2007, 90(24):242112-1-3.

Smorchkova I P, Chen L, Mates T, et al. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy [J]. J. Appl. Phys., 2001, 90(10):5196-5201.

Balme R S, Hilton K P, Nash K J, et al. AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer [J]. Phys. Stat. Sol.(c), 2003(7):2331-2334.

Wu Y F, Saxler A, Moore M, et al. 30-W/mm GaN HEMTs by field plate optimization [J]. IEEE Electron Dev. Lett., 2004, 25(3):117-119.

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