近紫外LED用黄色荧光粉Sr3SiO5：Ce3+, Li+的发光特性

郎天春; 韩涛; 彭玲玲; 蒲勇; 涂铭旌; 张进

doi:10.3788/fgxb20143507.0819

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近紫外LED用黄色荧光粉Sr₃SiO₅：Ce³⁺, Li⁺的发光特性

材料合成及性能 | 更新时间：2020-08-12

- 近紫外LED用黄色荧光粉Sr₃SiO₅：Ce³⁺, Li⁺的发光特性
- Luminescent Properties of Sr₃SiO₅：Ce³⁺, Li⁺ Yellow Phosphor for NUV Light Emitting Diodes
- 发光学报 2014年35卷第7期页码：819-823
- 作者机构：
  
  1. 重庆文理学院新材料技术研究院重庆,402160
  2. 重庆理工大学材料科学与工程学院重庆,400054
  3. 重庆市光电材料与器件工程技术研究中心重庆,402160
- 作者简介：
- 基金信息：
  
  重庆市自然科学基金（cstc2012jjA50039）();国家自然科学基金（51302330）();重庆文理学院科研项目基金（M2013ME03）资助项目()
- DOI：10.3788/fgxb20143507.0819
  中图分类号： O482.31
- 收稿日期：2014-03-06，
  
  修回日期：2014-05-11，
  
  纸质出版日期：2014-07-03
- 稿件说明：
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郎天春, 韩涛, 彭玲玲等. 近紫外LED用黄色荧光粉Sr3SiO5：Ce3+, Li+的发光特性[J]. 发光学报, 2014,35(7): 819-823

LANG Tian-chun, HAN Tao, PENG Ling-ling etc. Luminescent Properties of Sr3SiO5：Ce3+, Li+ Yellow Phosphor for NUV Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2014,35(7): 819-823
郎天春, 韩涛, 彭玲玲等. 近紫外LED用黄色荧光粉Sr3SiO5：Ce3+, Li+的发光特性[J]. 发光学报, 2014,35(7): 819-823 DOI： 10.3788/fgxb20143507.0819.

LANG Tian-chun, HAN Tao, PENG Ling-ling etc. Luminescent Properties of Sr3SiO5：Ce3+, Li+ Yellow Phosphor for NUV Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2014,35(7): 819-823 DOI： 10.3788/fgxb20143507.0819.

摘要

采用高温固相法快速降温合成Sr

3-2

SiO

：

，

荧光粉。用X射线衍射仪和荧光分光光度计测试荧光粉的样品结构和发光性能。在1 420 ℃下煅烧得到四方相结构的Sr

SiO

：Ce

，Li

。样品的激发光谱分布于270~500 nm的波长范围，有两个激发带，峰位分别位于328 nm和410 nm，表明样品可以被近紫外光有效激发。样品的发射光谱分布于420~650 nm，发射峰位于528 nm处。在410 nm左右的近紫外光激发下，宽带发射的峰位于528 nm。Ce

的最佳掺杂量

（Ce

）为0.8%，并且发光强度随掺杂浓度的增加先升高后降低，出现浓度猝灭。根据Dexter能量共振理论，该浓度猝灭的原因是Ce

的电偶极-电偶极相互作用。

Abstract

SiO

:Ce

phosphors were synthesized by the high temperature solid state reaction method. The crystal structure and luminescent properties of the samples were analyzed by X-ray diffraction and fluorescence spectrophotometer. Sr

3-2

SiO

samples with tetragonal phase structure can be synthesized at

420 ℃. The excitation spectral distribution is in the near-ultraviolet range of 270 ~ 500 nm with two bands

and the double peak positions are located at 328 nm and 410 nm

respectively. The emission spectrum under 410 nm near-ultrviolet excitation shows a broad band centered at 528 nm. The optimum doping content of Ce

(Ce

)=0.8%. With the increase of doping concentration

the luminescence intensity firstly increases and then decreases because of the concentration quenching effect. The concentration quenching is attribute to the dipole-dipole interaction of Ce

according to Dexter theory.

关键词

Keywords

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