硼对氮掺杂的p型ZnO薄膜的影响

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硼对氮掺杂的p型ZnO薄膜的影响

材料合成及性能 | 更新时间：2020-08-12

- 硼对氮掺杂的p型ZnO薄膜的影响
- Effect of Boron on Nitrogen Doped p-type ZnO Thin Films
- 发光学报 2014年35卷第7期页码：795-799
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  3. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家();973();计划（2011CB302002，2011CB302005）();国家自然科学基金（11134009，11074248，11104265）资助项目()
- DOI：10.3788/fgxb20143507.0795
  中图分类号： O484.4
- 收稿日期：2014-02-10，
  
  修回日期：2014-04-18，
  
  纸质出版日期：2014-07-03
- 稿件说明：
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赵鹏程, 张振中, 姚斌等. 硼对氮掺杂的p型ZnO薄膜的影响[J]. 发光学报, 2014,35(7): 795-799

ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin etc. Effect of Boron on Nitrogen Doped p-type ZnO Thin Films[J]. Chinese Journal of Luminescence, 2014,35(7): 795-799
赵鹏程, 张振中, 姚斌等. 硼对氮掺杂的p型ZnO薄膜的影响[J]. 发光学报, 2014,35(7): 795-799 DOI： 10.3788/fgxb20143507.0795.

ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin etc. Effect of Boron on Nitrogen Doped p-type ZnO Thin Films[J]. Chinese Journal of Luminescence, 2014,35(7): 795-799 DOI： 10.3788/fgxb20143507.0795.

摘要

利用分子束外延设备在蓝宝石衬底上生长了B/N共掺的p型ZnO薄膜，对比了B/N共掺和N单掺杂样品的物理学性能。通过X射线光电子能谱测试证明了在薄膜中存在有B和BN键。B/N共掺样品的空穴浓度比单一N掺杂样品高近两个量级。且ZnO：（B，N）薄膜在两年多的时间内一直显示稳定的p型电导。这是由于BN键的存在提高了N在ZnO薄膜中的固溶度，且BN键之间强的键能和B占据Zn位所表现的弱施主特性不会带来强的施主补偿效应，说明B是N掺杂ZnO薄膜的一种良好的共掺元素。

Abstract

A stable and repeatable p-type ZnO is the key to realize the practical applications of photoelectric devices. Nitrogen has been considered as a possible acceptor dopant for p-type ZnO for a long time. However

the low solubility of nitrogen acceptor at oxygen site in ZnO is considered to be one of the main obstacles for p-type ZnO. In this paper

B/N co-doped p-type ZnO thin films were grown on sapphire substrate by plasma-assisted molecular beam epitaxy. The effect of boron on the nitrogen doping was studied by comparing with the single nitrogen doped thin films. X-ray photoelectron spectroscopy demonstrated there exists boron and BN bond in the ZnO thin film. Compared to the single N-doped sample

B/N codoped samples present much higher carrier density. And the ZnO:(B

N) thin films show stable p-type conduction in two years. It is attributed to the increase of solubility of nitrogen acceptor. It benefits from the strong B-N bonding and weak donor character of boron at zinc site. Boron will not bring strong compensation for acceptors. It suggests that boron is a good co-doping candidate for nitrogen doped ZnO thin films.

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references

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