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中国科学院半导体研究所 半导体材料科学重点实验室 低维半导体材料与器件北京市重点实验室 北京,100083
收稿日期:2014-03-13,
修回日期:2014-04-01,
纸质出版日期:2014-07-03
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毛德丰, 金鹏, 李维等. AlGaN合金中局域态和极化电场的竞争机制[J]. 发光学报, 2014,35(7): 761-766
MAO De-feng, JIN Peng, LI Wei etc. Competition Mechanism of Local State-internal Polarization Electric Field in Algan Alloy[J]. Chinese Journal of Luminescence, 2014,35(7): 761-766
毛德丰, 金鹏, 李维等. AlGaN合金中局域态和极化电场的竞争机制[J]. 发光学报, 2014,35(7): 761-766 DOI: 10.3788/fgxb20143507.0761.
MAO De-feng, JIN Peng, LI Wei etc. Competition Mechanism of Local State-internal Polarization Electric Field in Algan Alloy[J]. Chinese Journal of Luminescence, 2014,35(7): 761-766 DOI: 10.3788/fgxb20143507.0761.
通过MOVPE方法生长了不同Al组分的3块Al
x
Ga
1-
x
N样品,利用稳态光谱和时间分辨光谱对其样品的光学特性进行了分析。鉴于影响氮化物发光性质的极化电场或局域态的单一机制不能充分解释我们的实验现象,提出了局域态-内部极化电场竞争的机制。通过对实验数据的分析,得出如下重要结论:样品PL峰位蓝移的温度起点基本对应于局域态和极化电场起作用的交替点,PL峰位发生蓝移的温度起点与光强-温度曲线的斜率出现明显变化的温度点一致;随着温度的升高,若AlGaN合金样品中PL峰位存在二次蓝移,则说明样品中电场分布不均匀。
Three Al
x
Ga
1-
x
N samples were grown by metal organic chemical vapor phase deposition (MOCVD)
and their optical properties were analyzed by the steady-state and time-resolved photoluminescence (PL) techniques. In view of the fact that the experimental phenomena cant be fully explained by a single mechanism of polarization electric field or that of local state
which remarkably influence luminescent properties of nitrids
the competition mechanism between local state and internal polarization electric field was proposed. By analyzing the experimental data
two crucial conclusions are drawn. First
the temperature starting point of PL peak blue-shift basically corresponds to the shift point between the effect of local state and the effect of polarization electric field. The temperature starting point of PL peak blue-shift is well consistent with the temperature point where the slope of illuminant intensity-temperature curve changes significantly. Then
there is non-uniform polarization electric field distribution in the sample if the PL peak has two blue-shifts with the temperature increasing in AlGaN alloy.
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