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N2流量对N掺杂MgZnO薄膜结构和性能的影响
Effects of N2 Flux Ratio on The Structure and Properties of MgZnO：N Films
- 发光学报 2014年35卷第6期 页码：689-694
- 作者机构：
1. 吉林大学 物理学院,吉林 长春,130021
2. 北华大学 物理学院,吉林 吉林,132013
- 作者简介：
- 基金信息：国家自然科学基金（11274135）();吉林省教育厅"();十二五"();科学技术研究项目（2013189）资助()
DOI：10.3788/fgxb20143506.0689
中图分类号： O472;O484.4收稿日期：2014-02-26，
修回日期：2014-04-12，
纸质出版日期：2014-06-03
- 稿件说明：
移动端阅览
高丽丽, 李永峰, 徐莹等. N<sub>2</sub>流量对N掺杂MgZnO薄膜结构和性能的影响[J]. 发光学报, 2014,35(6): 689-694
GAO Li-li, LI Yong-feng, XU Ying etc. Effects of N<sub>2</sub> Flux Ratio on The Structure and Properties of MgZnO：N Films[J]. Chinese Journal of Luminescence, 2014,35(6): 689-694
高丽丽, 李永峰, 徐莹等. N<sub>2</sub>流量对N掺杂MgZnO薄膜结构和性能的影响[J]. 发光学报, 2014,35(6): 689-694 DOI： 10.3788/fgxb20143506.0689.
GAO Li-li, LI Yong-feng, XU Ying etc. Effects of N<sub>2</sub> Flux Ratio on The Structure and Properties of MgZnO：N Films[J]. Chinese Journal of Luminescence, 2014,35(6): 689-694 DOI： 10.3788/fgxb20143506.0689.
摘要
利用射频磁控溅射方法，使用Mg
0. 04
Zn
0.96
O 陶瓷靶材，选用不同流量比的氮气和氩气混和气体作为溅射气体，在石英基片上生长N掺杂Mg
x
Zn
1-
x
O合金薄膜。研究了氮流量比对薄膜组分、结构、形貌、电学性质和拉曼光谱的影响。结果显示：随着溅射气氛中氮流量比的增加，薄膜中Mg含量增加，薄膜表面颗粒尺寸减小，结晶质量变差，电阻率逐渐增大，导电类型发生转变。在氮流量比为20%时，获得了最好的p型导电薄膜。另外，随着氮流量比的增加，拉曼光谱中与N
O
相关的位于272 cm
-1
、642 cm
-1
左右的振动峰逐渐增强，表明N
O
的浓度随着氮流量比的加大而有所增加。
Abstract
Using Mg
0.04
Zn
0.96
O target
N doped MgZnO films were prepared on quartz substrate by radio frequency magnetron sputtering technique. The effects of N
2
/(N
2
+Ar) flux ratio on the morphology
structure and properties of annealed MgZnO thin films were investigated. With the increasing flux ratio of N
2
/(N
2
+Ar)
the content of Mg increases
the average grain size becomes smaller
the crystal quality degrades
the resistivity increases
and the conductivity of the film changes. When the flux ratio of N
2
/(N
2
+Ar) is 20%
the MgZnO:N film behaves the best p-type conductivity property. Furthermore
the Raman peaks of the N for O site (N
O
) at 272 and 642 cm
-1
become stronger with the flux ratio of N
2
/(N
2
+Ar) increasing. It can be concluded that the doping concentration of N for O site (N
O
) increases with the flux ratio of N
2
/(N
2
+Ar) increasing.
关键词
Keywords
references
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