m面蓝宝石上外延（110）取向立方MgZnO薄膜及其日盲紫外探测器件研究

郑剑; 张振中; 张吉英; 刘益春; 王双鹏; 姜明明; 陈星; 李炳辉; 赵东旭; 刘雷; 王立昆; 单崇新; 申德振

doi:10.3788/fgxb20143506.0678

您当前的位置：

首页 >

文章列表页 >

m面蓝宝石上外延（110）取向立方MgZnO薄膜及其日盲紫外探测器件研究

材料合成及性能 | 更新时间：2020-08-12

- m面蓝宝石上外延（110）取向立方MgZnO薄膜及其日盲紫外探测器件研究
- Epitaxial (110)-oriented Cubic MgZnO Films on m-plane Sapphire for Solar-blind UV Photodetectors
- 发光学报 2014年35卷第6期页码：678-683
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
  3. 东北师范大学先进光电子功能材料研究中心,吉林长春,130024
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展计划（2011CB302006，2011CB302002）();国家自然科学基金（11134009，61376054，11174273，111042
- DOI：10.3788/fgxb20143506.0678
  中图分类号： O484.4
- 收稿日期：2014-03-03，
  
  修回日期：2014-04-14，
  
  纸质出版日期：2014-06-03
- 稿件说明：
移动端阅览
郑剑, 张振中, 张吉英等. m面蓝宝石上外延（110）取向立方MgZnO薄膜及其日盲紫外探测器件研究[J]. 发光学报, 2014,35(6): 678-683

ZHENG Jian, ZHANG Zhen-zhong, ZHANG Ji-ying etc. Epitaxial (110)-oriented Cubic MgZnO Films on m-plane Sapphire for Solar-blind UV Photodetectors[J]. Chinese Journal of Luminescence, 2014,35(6): 678-683
郑剑, 张振中, 张吉英等. m面蓝宝石上外延（110）取向立方MgZnO薄膜及其日盲紫外探测器件研究[J]. 发光学报, 2014,35(6): 678-683 DOI： 10.3788/fgxb20143506.0678.

ZHENG Jian, ZHANG Zhen-zhong, ZHANG Ji-ying etc. Epitaxial (110)-oriented Cubic MgZnO Films on m-plane Sapphire for Solar-blind UV Photodetectors[J]. Chinese Journal of Luminescence, 2014,35(6): 678-683 DOI： 10.3788/fgxb20143506.0678.

摘要

由于在日盲紫外探测方面的应用前景，具有合适带隙的MgZnO合金半导体薄膜受到越来越多的关注。获得具有择优取向的单一相MgZnO对提升MgZnO基日盲紫外探测器性能至关重要。本文利用低压金属有机化学气相沉积（LP-MOCVD）方法在

面蓝宝石衬底上制备了一系列不同组分的Mg

O薄膜。光学和结构特性测试结果表明：Zn摩尔分数达到55%的Mg

0.45

0.55

O薄膜依然是单一立方相，其光学带隙可以达到4.7 eV。立方岩盐结构MgZnO与

面蓝宝石衬底的外延结构关系为（110）

MgZnO

‖（10

0）

sapphire

、[001]

MgZnO

‖[1

10]

sapphire

和[

10]

MgZnO

‖[0001]

sapphire

。唯一确定的面内取向有利于薄膜晶体质量的提高。基于（110）取向立方相Mg

0.45

0.55

O薄膜制备金属-半导体-金属（MSM）结构器件，获得了光响应峰在260 nm、光响应截止波长278 nm的日盲紫外探测器。

Abstract

A series of Mg

O alloy films were grown on

-plane sapphire by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Optical and structural characterizations indicated that the films with Zn mole fraction up to 55% are single-cubic-phased

and the optical bandgap of Mg

0.45

0.55

O film is 4.7 eV. The epitaxial [JP2]relationships between substrate and rocksalt MgZnO layers were determined as (110)

MgznO

‖(10

sapphire

[001]

MgZnO

‖[1

10]

sapphire

and [

10]

MgZnO

‖[0001]

sapphire

. The fixed uniform orientation of the films was accompanied by an improvement in crystal quality. A metal-semiconductor-metal structured solar-blind ultraviolet detector fabricated on Mg

0.45

0.55

O film showed a response peak at 260 nm and a sharp cutoff at 278 nm.

关键词

Keywords

references

Schreiber P, Dang T, Pickenpaugh T, et al. Solar-blind UV region and UV detector development objectives [J]. SPIE, 1999, 3629:230-248.

Shaw G A, Siegel A M, Model J, et al. Recent progress in short-range ultraviolet communication [J]. SPIE, 2005, 5796:214-225.

Tanaka H S, Fujita S G, Fujita S Z, et al. Fabrication of wide-band-gap MgxZn1-xO quasi-ternary alloys by molecular-beam epitaxy [J]. Appl. Phys. Lett., 2005, 86(19):192911-1-3.

Du X L, Mei Z X, Liu Z L, et al. Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors [J]. Adv. Mater., 2009, 21(45):4625-4630.

Zheng Q H, Huang F, Ding K, et al. MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates [J]. Appl. Phys. Lett., 2011, 98(22):221112-1-3.

Segnit E R, Holland A E. The system MgO-ZnO-SiO2 [J]. J. Am. Ceram. Soc., 1965, 48(8):409-413.

Raghavan S, Hajra J P, Iyengar G N K, et al. Terminal solid solubilities at 900-1 000℃ in the magnesium oxide-zinc oxide system measured using a magnesium fluoride solid-electrolyte galvanic cell [J]. Thermochim. Acta, 1991, 189(1):151-158.

Choopun S, Vispute R D, Yang W, et al. Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J]. Appl. Phys. Lett., 2002, 80(9):1529-1531.

Ju Z G, Shan C X, Jiang D Y, et al. MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range [J]. Appl. Phys. Lett., 2008, 93(17):173505-1-3.

Wang L K, Ju Z G, Zhang J Y, et al. Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices [J]. Appl. Phys. Lett., 2009, 95(13):131113-1-3.

Han S, Zhang Z Z, Zhang J Y, et al. Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film [J]. Appl. Phys. Lett., 2011, 99(24):242105-1-3.

Ziga-Prez J, Muoz-Sanjos V, Palacios-Lidn E, et al. Facets evolution and surface electrical properties of nonpolar m-plane ZnO thin films [J]. Appl. Phys. Lett., 2006, 88(26):261912-1-3.

Ku C S, Lee H Y, Huang J M, et al. Epitaxial growth of m-plane ZnO thin films on (101[TX-]0) sapphire substrate by atomic layer deposition with interrupted flow [J]. Cryst. Growth Des., 2010, 10(4):1460-1463.

Bates C H, White W B, Roy R, et al. New high-pressure polymorph of zinc oxide [J]. Science, 1962, 137(3534): 993-993.

Bendersky L A, Takeuchi I, Chang K S, et al. Microstructural study of epitaxial MgxZn1-xO composition spreads [J]. J. Appl. Phys., 2005, 98(8):083526-1-6.

Vashaei Z, Minegishi T, Suzuki H, et al. Structural variation of cubic and hexagonal MgxZn1-xO layers grown on MgO(111)/c-sapphire [J]. J. Appl. Phys., 2005, 98(5):054911-1-4.

Ziga-Prez J, Martnez-Toms C, Muoz-Sanjos V, et al. Faceting and structural anisotropy of nanopatterned CdO(110) layers [J]. J. Appl. Phys., 2005, 98(3):034311-1-6.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

晶格小失配InGaAsP材料特性及太阳电池应用

压强对GaSb/GaAs量子点形貌各向异性的影响

生长温度对MOCVD外延ZnO纳米结构的影响

量子阱生长气压对InGaN/GaN黄光LED光电性能的影响

MOCVD反应室温度均匀性的研究