ITO表面粗化提高GaN基LED芯片出光效率

胡金勇; 黄华茂; 王洪; 胡晓龙

doi:10.3788/fgxb20143505.0613

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ITO表面粗化提高GaN基LED芯片出光效率

器件制备及器件物理 | 更新时间：2020-08-12

- ITO表面粗化提高GaN基LED芯片出光效率
- Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO
- 发光学报 2014年35卷第5期页码：613-617
- 作者机构：
  
  华南理工大学理学院物理系广东省光电工程技术研究开发中心,广东广州,510640
- 作者简介：
- 基金信息：
  
  国家高技术研究发展计划（863）（2014AA032609）();广东省战略性新兴产业发展专项资金（2010A081002009，2011A081301004，2012
- DOI：10.3788/fgxb20143505.0613
  中图分类号： TN304.2+3
- 收稿日期：2013-12-31，
  
  修回日期：2014-03-14，
  
  纸质出版日期：2014-05-03
- 稿件说明：
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胡金勇, 黄华茂, 王洪等. ITO表面粗化提高GaN基LED芯片出光效率[J]. 发光学报, 2014,35(5): 613-617

HU Jin-yong, HUANG Hua-mao, WANG Hong etc. Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO[J]. Chinese Journal of Luminescence, 2014,35(5): 613-617
胡金勇, 黄华茂, 王洪等. ITO表面粗化提高GaN基LED芯片出光效率[J]. 发光学报, 2014,35(5): 613-617 DOI： 10.3788/fgxb20143505.0613.

HU Jin-yong, HUANG Hua-mao, WANG Hong etc. Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO[J]. Chinese Journal of Luminescence, 2014,35(5): 613-617 DOI： 10.3788/fgxb20143505.0613.

摘要

使用现有生产线上工艺成熟且成本低廉的技术实现ITO粗化以提高GaN基LED蓝光芯片的出光效率是产业界重要的研究课题。本文通过普通光刻技术和湿法腐蚀技术，实现ITO表面粗化，有效地提高了LED芯片的输出光功率。输入电流为20 mA时，ITO层制备密集分布的三角周期圆孔阵列后，芯片输出光功率提升11.4%，但正向电压升高0.178 V；微结构优化设计后，芯片输出光功率提升8.2%，正向电压仅升高0.044 V。小电流注入时，密集分布的三角周期圆孔阵列有利于获得较高的输出光功率。大电流注入时，这种结构将导致电流拥挤，芯片的电光转化效率衰减严重。经过优化设计后的微结构阵列器件，具有较高的电注入效率，因此芯片的出光效率较高且随输入电流的增加而衰减的趋势较慢，因此更适合大电流下工作。

Abstract

The sophisticated techniques of photolithography and wet-etching are used to fabricate GaN-based LED chips with surface-textured ITO layer to enhance the light output efficiency. It is shown that the light-output power can be efficiently improved by this surface-textured method. After the triangle-lattice of close-packed micro-holes are fabricated

the light-output power of LED chips under the injection current of 20 mA exhibits 11.4% enhancement comparing to the conventional LED chips. However

the forward voltage correspondingly increases 0.178 V. With our proposed micro-structures

the light-output power can also be enhanced by 8.2%

while the forward voltage increases only 0.044 V. It is also shown that the close-packed micro-hole pattern benefits high light-output under small injection current. However

this pattern would induce current-crowding if the injection current become high

and thus the light-output efficiency would decrease significantly. On the other hand

our optimized micro-structure is help for high electric-injection efficiency. This induces a high light-output efficiency

and the efficiency droop can be suppressed. The proposed micro-structure is preferred for high power LED chips under large current injection.

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references

Zhmakin A I. Enhancement of light extraction from light emitting diodes[J].Phys. Rep., 2011, 498(4):189-241.[2] Huh C, Lee K S, Kang E J, et al. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface[J].J. Appl. Phys., 2003, 93(11):9383-9385.[3] Han D S, Kim J Y, Na S I, et al. Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate[J].IEEE Photon. Technol. Lett., 2006, 18(13):1406-1408.[4] Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J].Appl. Phys. Lett., 2004, 84(6):855-857.[5] Cao X A, Pearton S J, Zhang A P, et al. Electrical effects of plasma damage in p-GaN[J].Appl. Phys. Lett., 1999, 75(17):2569-2571.[6] Zhuang D, Edgar J H. Wet etching of GaN, AlN, and SiC: A review[J].Mat. Sci. Eng. R:Rep., 2005, 48(1):1-46.[7] Huang S M, Yao Y, Jin C, et al. Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts[J].Displays, 2008, 29(3):254-259.[8] He A H, Zhang Y, Zhu X H, et al. Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching[J].Chin. Phys. B, 2010, 19(6):068101-1-5.[9] Leem D S, Cho J, Sone C, et al. Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes[J].J. Appl. Phys., 2005, 98(7):076107-1-3.[10] Chang S J, Shen C F, Chen W S, et al. Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography[J].Appl. Phys. Lett., 2007, 91(1):013504-1-3.[11] Wang P, Cao B, Wei W, et al. Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design[J].Solid-State Electron., 2010, 54(3):283-287.[12] Wang H, Ye F F, Huang H M, et al. Design and realization of reflective current barrier for high-brightness LED chips[J].J. OptoelectronicsLaser (光电子激光), 2012, 23(6):1077-1081 (in Chinese).

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