铜掺杂氧化锌薄膜阻变特性的研究

杨帆; 韦敏; 邓宏; 杨胜辉; 刘冲

doi:10.3788/fgxb20143505.0604

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铜掺杂氧化锌薄膜阻变特性的研究

器件制备及器件物理 | 更新时间：2020-08-12

- 铜掺杂氧化锌薄膜阻变特性的研究
- Characteristics of Copper Doped Zinc Oxide Thin Film Resistive Switching
- 发光学报 2014年35卷第5期页码：604-607
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054
- 作者简介：
- 基金信息：
  
  中央高校基本科研业务费();中国高等学校博士学科点科研基金（20110185110014）资助项目()
- DOI：10.3788/fgxb20143505.0604
  中图分类号： TN304.21
- 收稿日期：2013-12-23，
  
  修回日期：2014-01-23，
  
  纸质出版日期：2014-05-03
- 稿件说明：
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杨帆, 韦敏, 邓宏等. 铜掺杂氧化锌薄膜阻变特性的研究[J]. 发光学报, 2014,35(5): 604-607

YANG Fan, WEI Min, DENG Hong etc. Characteristics of Copper Doped Zinc Oxide Thin Film Resistive Switching[J]. Chinese Journal of Luminescence, 2014,35(5): 604-607
杨帆, 韦敏, 邓宏等. 铜掺杂氧化锌薄膜阻变特性的研究[J]. 发光学报, 2014,35(5): 604-607 DOI： 10.3788/fgxb20143505.0604.

YANG Fan, WEI Min, DENG Hong etc. Characteristics of Copper Doped Zinc Oxide Thin Film Resistive Switching[J]. Chinese Journal of Luminescence, 2014,35(5): 604-607 DOI： 10.3788/fgxb20143505.0604.

摘要

以 ZnO：Al为底电极，Cu为顶电极，在同种工艺条件下分别制备了类电容结构的纯ZnO 阻变器件和ZnO：2%Cu阻变器件，分析比较了两种器件的典型

特性曲线、置位电压（

Set

）和复位电压（

Reset

）的分布范围、器件的耐久性。结果显示，ZnO：Cu阻变器件较纯ZnO阻变器件有更大的开关比和更稳定的循环性能。另外，研究了 ZnO：Cu阻变器件的阻变机理，通过对其

特性曲线分析得出以下结论：ZnO：Cu阻变器件在高阻态遵循空间电荷限制电流效应，低阻态符合欧姆定律。

Abstract

Pure ZnO resistive switching and ZnO:2% Cu resistive switching with sandwich structure were fabricated in the same conditions. The bottom electrode was ZnO:Al

and the top electrode was Cu for the resistive switchings. The switching characteristics such as endurance

variations of threshold voltage as well as distribution of resistance were investigated. The results demonstrate that the ZnO:Cu devices exhibit more excellent switching performance than ZnO devices. In addition

the switching mechanism of ZnO:Cu resistive device were also studied in this paper. The

characteristics of the device indicate that the conduction mechanisms of high and low resistance states can be explained by trap-controlled space charge limited current (SCLC) and Ohmics law

respectively.

关键词

Keywords

references

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