单根ZnO纳米线低温条件下的电子输运及光敏性质

顾海佳; 唐欣月; 杨守斌

doi:10.3788/fgxb20143505.0600

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单根ZnO纳米线低温条件下的电子输运及光敏性质

器件制备及器件物理 | 更新时间：2020-08-12

- 单根ZnO纳米线低温条件下的电子输运及光敏性质
- Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures
- 发光学报 2014年35卷第5期页码：600-603
- 作者机构：
  
  哈尔滨师范大学物理与电子工程学院,黑龙江哈尔滨,150025
- 作者简介：
- 基金信息：
  
  黑龙江省自然科学基金（A201304）();黑龙江省教育厅科学技术重点研究项目（12521z012）();黑龙江省研究生创新科研项目（2013）资助()
- DOI：10.3788/fgxb20143505.0600
  中图分类号： O484.4
- 收稿日期：2013-12-31，
  
  修回日期：2014-01-23，
  
  网络出版日期：2014-03-07，
  
  纸质出版日期：2014-05-03
- 稿件说明：
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顾海佳, 唐欣月, 杨守斌. 单根ZnO纳米线低温条件下的电子输运及光敏性质[J]. 发光学报, 2014,35(5): 600-603

GU Hai-jia, TANG Xin-yue, YANG Shou-bin. Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures[J]. Chinese Journal of Luminescence, 2014,35(5): 600-603
顾海佳, 唐欣月, 杨守斌. 单根ZnO纳米线低温条件下的电子输运及光敏性质[J]. 发光学报, 2014,35(5): 600-603 DOI： 10.3788/fgxb20143505.0600.

GU Hai-jia, TANG Xin-yue, YANG Shou-bin. Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures[J]. Chinese Journal of Luminescence, 2014,35(5): 600-603 DOI： 10.3788/fgxb20143505.0600.

摘要

用化学气相沉积的方法合成了ZnO纳米线，采用微栅模板法制得电极从而获得欧姆接触的单根ZnO纳米线半导体器件。通过研究60~300 K范围内的电阻变化情况，发现在整个温度区间内存在热激活和近程跳跃两种传输机制。在300，200，100 K的条件下分别测试了器件的紫外光响应和恢复情况，结果表明：低温下器件对紫外光的敏感性提高，电流的恢复时间随着温度的降低而延长。

Abstract

ZnO nanowires were synthesized by chemical vapor deposition method

and single ZnO nanowire semiconductor devices with Ohmic contact electrodes were fabricated using the micro grid template method. The electrical properties of the device were investigated at low temperatures. The results show that there are two types of transport mechanism: thermal activation and nearest-neighbor hopping mechanism from 300 to 60 K. The properties of ultraviolet light response and recovery of the device were tested at 300

200

and 100 K

respectively. The results show that the sensitivity of the device to ultraviolet is improved at low temperature

and the current recovery time increases with the temperature falling down.

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references

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