GaN基LED低温空穴注入层的MOCVD生长研究

黄华茂; 游瑜婷; 王洪; 杨光

doi:10.3788/fgxb20143505.0595

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GaN基LED低温空穴注入层的MOCVD生长研究

器件制备及器件物理 | 更新时间：2020-08-12

- GaN基LED低温空穴注入层的MOCVD生长研究
- Investigation of Low Temperature Hole-injection Layer in GaN-based LED Epitaxial Wafer Grown by MOCVD
- 发光学报 2014年35卷第5期页码：595-599
- 作者机构：
  
  华南理工大学理学院物理系广东省光电工程技术研究开发中心,广东广州,510640
- 作者简介：
- 基金信息：
  
  国家高技术研究发展计划（863）（2014AA032609）();广东省战略性新兴产业发展专项资金（2010A081002009，2011A081301004，2012
- DOI：10.3788/fgxb20143505.0595
  中图分类号： TN303;TN304
- 收稿日期：2014-01-10，
  
  修回日期：2014-02-22，
  
  纸质出版日期：2014-05-03
- 稿件说明：
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黄华茂, 游瑜婷, 王洪等. GaN基LED低温空穴注入层的MOCVD生长研究[J]. 发光学报, 2014,35(5): 595-599

HUANG Hua-mao, YOU Yu-ting, WANG Hong etc. Investigation of Low Temperature Hole-injection Layer in GaN-based LED Epitaxial Wafer Grown by MOCVD[J]. Chinese Journal of Luminescence, 2014,35(5): 595-599
黄华茂, 游瑜婷, 王洪等. GaN基LED低温空穴注入层的MOCVD生长研究[J]. 发光学报, 2014,35(5): 595-599 DOI： 10.3788/fgxb20143505.0595.

HUANG Hua-mao, YOU Yu-ting, WANG Hong etc. Investigation of Low Temperature Hole-injection Layer in GaN-based LED Epitaxial Wafer Grown by MOCVD[J]. Chinese Journal of Luminescence, 2014,35(5): 595-599 DOI： 10.3788/fgxb20143505.0595.

摘要

针对GaN基LED空穴注入效率低的问题，在量子阱与电子阻挡层之间插入低温空穴注入层（LT-HIL），实验研究了MOCVD生长LT-HIL时二茂镁（Cp

Mg）流量和生长温度的影响。结果表明：随着Cp

Mg流量的增加，外延薄膜晶体质量下降，外延片表面平整度和均匀性降低；而受Mg掺杂时补偿效应的影响，主波长先红移后蓝移，芯片的输出光功率先升高后降低，正向电压先降低后升高。相比于无LT-HIL的样品，在20 mA工作电流下，Cp

Mg流量为1.94 mol/min时制备的芯片的输出光功率提升20.3%，而正向电压降低0.1 V。在Cp

Mg流量较大时，LT-HIL的渐变式生长温度对外延质量有所改善，但不是主要影响因素。

Abstract

A low-temperature hole-injection layer (LT-HIL) was inserted between multiple-quantum well and electron-blocking layer in GaN-based light-emitting diodes (LEDs) to improve the hole-injection efficiency. The effects of magnesocene (Cp

Mg) flow rate and process temperature of LT-HIL in MOCVD epitaxy were investigated. The surface reflectivity and dominant wavelength of epitaxial wafers were measured by photoluminescence spectrometer

the surface profiles were observed by microscope

and the light-output power and forward voltage of fabricated chips were tested by wafer-level auto-measurement system. As the Cp

Mg flow rate increases

the crystal quality

flatness

and uniformity of epilayer decrease. Due to the compensation effects in Mg-doped GaN material

the dominant wavelength shows red-shift at first and then blue-shift

the output power of the chip goes up to the maximum then falls down

and the forward voltage goes down to the minimum then rises up. Compared to conventional LED chips without LT-HIL

the output power and forward voltage of the LED chips with Cp

Mg moral flow rate of 1.94 mol/min are enhanced by 20.3% and reduced by 0.1 V under the injection current of 20 mA. It is also shown that the gradually changing process temperature can also improve the crystal quality

flatness and uniformity of epilayer

although it is non-principal reason under the condition of large Cp

Mg moral flow rate.

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references

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