PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响

白潇; 程晓曼; 樊剑锋; 蒋晶; 郑灵程; 吴峰

doi:10.3788/fgxb20143504.0470

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PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响
- Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor
- 发光学报 2014年35卷第4期页码：470-475
- 作者机构：
  
  1. 天津理工大学理学院天津,300384
  2. 天津理工大学教育部显示材料与光电器件重点实验室, 天津光电材料与器件重点实验室天津,300384
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61076065，11204214）资助项目()
- DOI：10.3788/fgxb20143504.0470
  中图分类号： O47;TN386
- 收稿日期：2013-12-23，
  
  修回日期：2014-01-28，
  
  纸质出版日期：2014-04-03
- 稿件说明：
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白潇, 程晓曼, 樊剑锋等. PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2014,35(4): 470-475

BAIXiao, CHENG Xiao-man, FAN Jian-feng etc. Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor[J]. Chinese Journal of Luminescence, 2014,35(4): 470-475
白潇, 程晓曼, 樊剑锋等. PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2014,35(4): 470-475 DOI： 10.3788/fgxb20143504.0470.

BAIXiao, CHENG Xiao-man, FAN Jian-feng etc. Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor[J]. Chinese Journal of Luminescence, 2014,35(4): 470-475 DOI： 10.3788/fgxb20143504.0470.

摘要

采用溶液制备法制备了用PVA作为绝缘层、P3HT作为有源层的有机场效应晶体管，

研究了不同浓度PVA栅绝缘层对器件性能的影响。实验结果显示

以质量分数为8%的PVA溶液制备的栅绝缘层具有最好的性能，器件的场效应迁移率为0.31 cm

-1

，阈值电压为-6 V。进一步分析了PVA栅绝缘层浓度对器件性能提高的原因，结果表明，对于制备溶液化的有机场效应晶体管，选取合适的PVA栅绝缘层浓度非常重要。

Abstract

Poly(3-hexylthiophene) based organic field effect transistors with poly(vinyl alcohol) gate dielectrics were fabricated by solution process. The effects of PVA gate dielectrics concentration on the performance of the devices were investigated. The experimental results show that the device with PVA mass fraction of 8% displays the best performance

which the field-effect mobility is up to 0.31 cm

-1

and the threshold voltage is as low as -6 V. Furthermore

the reason for the performance improvement of the devices was analyzed. It indicates that the appropriate PVA concentration is extremely important for the solution-processed OFETs.

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references

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