半导体器件总剂量辐射效应的热力学影响

丛忠超; 余学峰; 崔江维; 郑齐文; 郭旗; 孙静; 周航

doi:10.3788/fgxb20143504.0465

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半导体器件总剂量辐射效应的热力学影响

器件制备及器件物理 | 更新时间：2020-08-12

- 半导体器件总剂量辐射效应的热力学影响
- Thermodynamic Impact on Total Dose Effect for Semiconductor Components
- 发光学报 2014年35卷第4期页码：465-469
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院特殊环境功能材料与器件重点实验室新疆理化技术研究所,新疆乌鲁木齐,830011
  3. 新疆电子信息材料与器件重点实验室,新疆乌鲁木齐,830011
- 作者简介：
- 基金信息：
  
  西部博士资助项目（XBBS201219）资助()
- DOI：10.3788/fgxb20143504.0465
  中图分类号： TN386.1
- 收稿日期：2013-11-14，
  
  修回日期：2013-12-07，
  
  网络出版日期：2014-01-24，
  
  纸质出版日期：2014-04-03
- 稿件说明：
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丛忠超, 余学峰, 崔江维等. 半导体器件总剂量辐射效应的热力学影响[J]. 发光学报, 2014,35(4): 465-469

CONG Zhong-chao, YU Xue-feng, CUI Jiang-wei etc. Thermodynamic Impact on Total Dose Effect for Semiconductor Components[J]. Chinese Journal of Luminescence, 2014,35(4): 465-469
丛忠超, 余学峰, 崔江维等. 半导体器件总剂量辐射效应的热力学影响[J]. 发光学报, 2014,35(4): 465-469 DOI： 10.3788/fgxb20143504.0465.

CONG Zhong-chao, YU Xue-feng, CUI Jiang-wei etc. Thermodynamic Impact on Total Dose Effect for Semiconductor Components[J]. Chinese Journal of Luminescence, 2014,35(4): 465-469 DOI： 10.3788/fgxb20143504.0465.

摘要

对商用三极管和MOS场效应晶体管进行了不同环境温度下的总剂量辐照实验，对比了不同辐照温度对这两种器件辐射效应特性的影响。实验结果表明，对于同一辐照总剂量，三极管的基极电流、电流增益和MOS场效应晶体管的阈值电压漂移值都随着辐照温度的不同而存在较大的差异。总剂量为100 krad，辐照温度分别为25，70，100 ℃时，NPN三极管的电流增益倍数分别衰减了71，89和113，而NMOS晶体管的阈值电压

分别减少了3.53，2.8，2.82 V。

Abstract

The total dose irradiation experiments were conducted on commercial triodes and MOS transistors. The impacts of different radiation temperature on the radiation effect were compared when the other conditions were identical. For the same total dose

the base current and current gain of the triode

and the threshold voltage of the MOS transistor exist a big discrepancy according to the different radiation temperature. When the total dose is 100 krad(Si) and the radiation temperature is 25

100 ℃

the current gain reduction of the NPN triode is 71

113

and the threshold voltage degradation of the NMOS transistor is 3.53

2.8

2.82 V

respectively.

关键词

Keywords

references

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