H/Al共掺杂对ZnO基透明导电薄膜光电性质和晶体结构的影响

宋秋明; 吕明昌; 谭兴; 张康; 杨春雷

doi:10.3788/fgxb20143504.0393

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H/Al共掺杂对ZnO基透明导电薄膜光电性质和晶体结构的影响

材料合成及性能 | 更新时间：2020-08-12

- H/Al共掺杂对ZnO基透明导电薄膜光电性质和晶体结构的影响
- Influence of H/Al Co-doping on Eletrical and Optical Properties and Crystal Structure of ZnO-based Transparent Conducting Films
- 发光学报 2014年35卷第4期页码：393-398
- 作者机构：
  
  1. 中国科学院深圳先进技术研究院中国科学院香港中文大学深圳先进集成技术研究所光伏太阳能研究中心,广东深圳,518055
  2. 中国科学技术大学纳米科学技术学院,江苏苏州,215123
- 作者简介：
- 基金信息：
  
  国家自然科学基金（51002178）();深圳市科技创新委项目（ZYC201105180487A）资助()
- DOI：10.3788/fgxb20143504.0393
  中图分类号： O484.4
- 收稿日期：2013-12-03，
  
  修回日期：2014-01-06，
  
  纸质出版日期：2014-04-03
- 稿件说明：
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宋秋明, 吕明昌, 谭兴等. H/Al共掺杂对ZnO基透明导电薄膜光电性质和晶体结构的影响[J]. 发光学报, 2014,35(4): 393-398

SONG Qiu-ming, LYU Ming-chang, TAN Xing etc. Influence of H/Al Co-doping on Eletrical and Optical Properties and Crystal Structure of ZnO-based Transparent Conducting Films[J]. Chinese Journal of Luminescence, 2014,35(4): 393-398
宋秋明, 吕明昌, 谭兴等. H/Al共掺杂对ZnO基透明导电薄膜光电性质和晶体结构的影响[J]. 发光学报, 2014,35(4): 393-398 DOI： 10.3788/fgxb20143504.0393.

SONG Qiu-ming, LYU Ming-chang, TAN Xing etc. Influence of H/Al Co-doping on Eletrical and Optical Properties and Crystal Structure of ZnO-based Transparent Conducting Films[J]. Chinese Journal of Luminescence, 2014,35(4): 393-398 DOI： 10.3788/fgxb20143504.0393.

摘要

利用H在ZnO中作为浅施主杂质的特性，研究了H掺杂对ZnO：Al透明导电薄膜特性的影响。通过降低ZnO：Al中Al的含量并同时引入H掺杂，解决了透明导电薄膜中高导电性与高透过率之间的矛盾。H的掺杂可以显著降低ZnO基透明导电薄膜的电阻率，这是由于H一方面作为施主可以提供电子从而提高了自由载流子浓度；另一方面与ZnO晶界中的O

结合降低了晶界势垒，提高了载流子迁移率。利用H掺杂，可以在Al掺杂量降低10倍的情况下，仍然能获得低电阻率（6.310

-4

cm）的透明导电薄膜，同时其近红外波段（1 200 nm）透光率从64%提高到90%。这种具有高导电性和高透光性的透明导电薄膜可以应用于各类薄膜太阳能电池中以提升器件效率。

Abstract

By incorporating suitable amount of H dopants and lowering the Al contents

the conflicts between low resistivity and high transmission in transparent conducting films have been successfully solved. The reduced resistivity of ZnO:Al films by hydrogen doping is attributed to the increased carrier density and carrier mobility. Hydrogen behaves as a shallow donor in ZnO and can provide plenty of electrons. Most importantly

it can increase the carrier mobility effectively by lowering the potential barrier between ZnO grains due to the passivation of O

defects around grain boundaries. The carrier mobility can also be increased due to the less impurity scattering induced by the lowering of Al dopants in ZnO films. With hydrogen doping

low resistivity (6.310

-4

cm) ZnO:Al samples with only 1/10 of Al contents compared to conventional AZO films can be got. The optical transmittance in near infrared region(1 200 nm) increases from 64% to 90% by comparing samples without and with H-doping is shown. This kind of high conductivity and high transmittance ZnO thin film will be excellent transparent conducting oxide candidate for various types of thin-film solar cells to improve the efficiency of the device.

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references

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