基于旋涂法和电子束蒸发法制备的V2O5/Ag/V2O5叠层透明导电薄膜

佐婧; 郭晓阳; 刘星元

doi:10.3788/fgxb20143503.0360

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基于旋涂法和电子束蒸发法制备的V₂O₅/Ag/V₂O₅叠层透明导电薄膜

器件制备及器件物理 | 更新时间：2020-08-12

- 基于旋涂法和电子束蒸发法制备的V₂O₅/Ag/V₂O₅叠层透明导电薄膜
- V₂O₅/Ag/V₂O₅ Multilayer Transparent Conductive Films Based on Sol-gel and Electron Beam Evaporation Techniques
- 发光学报 2014年35卷第3期页码：360-365
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学, 北京 100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61106057）资助项目()
- DOI：10.3788/fgxb20143503.0360
  中图分类号： TN383+.1
- 收稿日期：2013-10-08，
  
  修回日期：2013-11-09，
  
  纸质出版日期：2014-03-03
- 稿件说明：
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佐婧, 郭晓阳, 刘星元. 基于旋涂法和电子束蒸发法制备的V2O5/Ag/V2O5叠层透明导电薄膜[J]. 发光学报, 2014,35(3): 360-365

ZUO Jing, GUO Xiao-yang, LIU Xing-yuan. V2O5/Ag/V2O5 Multilayer Transparent Conductive Films Based on Sol-gel and Electron Beam Evaporation Techniques[J]. Chinese Journal of Luminescence, 2014,35(3): 360-365
佐婧, 郭晓阳, 刘星元. 基于旋涂法和电子束蒸发法制备的V2O5/Ag/V2O5叠层透明导电薄膜[J]. 发光学报, 2014,35(3): 360-365 DOI： 10.3788/fgxb20143503.0360.

ZUO Jing, GUO Xiao-yang, LIU Xing-yuan. V2O5/Ag/V2O5 Multilayer Transparent Conductive Films Based on Sol-gel and Electron Beam Evaporation Techniques[J]. Chinese Journal of Luminescence, 2014,35(3): 360-365 DOI： 10.3788/fgxb20143503.0360.

摘要

利用溶胶-凝胶技术与电子束蒸镀相结合的方法在常温下制备了叠层V

/Ag/V

（VAV）透明导电薄膜，研究了各层薄膜厚度对叠层结构光电特性的影响。用原子力显微镜、紫外-可见光分光光度计、四探针电阻仪及开尔文探针对样品的表面形貌、光电性能及功函数等性质进行了表征。实验结果表明，该薄膜具有良好的光学和电学性质，可见光（380~780 nm）平均透过率达75%，迁移率为16.89 cm

/（Vs），载流子浓度为－1.04310

-3

，方块电阻值为15.1 /□，功函数为5.17 eV。该制备方法降低了V

薄膜的工艺制备难度，为该材料在太阳能电池中的应用创造了良好的前期基础。

Abstract

/Ag/V

(VAV) multi-layer transparent conductive film was prepared by the combination of sol-gel technique and electron beam evaporation at room temperature. The effects of each layer's thickness on photoelectrical properties and surface appearance of multi-layers were studied by atomic force microscope

UV-Vis spectrophotometer

four-point probe method and Kelvin probe. The experiments results reveal that the multi-layer transparent conductive film has desirable photo-electrical properties with average transmission of 75%(380~780 nm)

mobility of 16.89 cm

/(Vs)

carrier concentration of -1.04310

-3

the sheet resistance of 15.1 /□

and work function of 5.17 eV. This method reduces the difficulty of fabricating V

/Ag/V

multi-layer films

providing a kind of promising transparent electrode for solar cells.

关键词

Keywords

references

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