基于并五苯/酞菁铅异质结的近红外光敏有机场效应管

周茂清; 李尧; 姚博; 吕文理; 彭应全

doi:10.3788/fgxb20143503.0342

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基于并五苯/酞菁铅异质结的近红外光敏有机场效应管

器件制备及器件物理 | 更新时间：2020-08-12

- 基于并五苯/酞菁铅异质结的近红外光敏有机场效应管
- Near Infrared Photoresponsive Organic Field-effect Transistors by Utilizing Pentacene/Lead Phthalocyanine Heterojunction
- 发光学报 2014年35卷第3期页码：342-348
- 作者机构：
  
  1. 兰州大学物理科学与技术学院微电子研究所,甘肃兰州,730000
  2. 兰州大学磁学与磁性材料教育部重点实验室, 甘肃兰州 730000
- 作者简介：
- 基金信息：
  
  国家自然科学基金（1097407）();教育部博士点基金（2011021111005）资助项目()
- DOI：10.3788/fgxb20143503.0342
  中图分类号： TN386
- 收稿日期：2013-11-20，
  
  修回日期：2013-12-08，
  
  纸质出版日期：2014-03-03
- 稿件说明：
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周茂清, 李尧, 姚博等. 基于并五苯/酞菁铅异质结的近红外光敏有机场效应管[J]. 发光学报, 2014,35(3): 342-348

ZHOU Mao-qing, LI Yao, YAO Bo etc. Near Infrared Photoresponsive Organic Field-effect Transistors by Utilizing Pentacene/Lead Phthalocyanine Heterojunction[J]. Chinese Journal of Luminescence, 2014,35(3): 342-348
周茂清, 李尧, 姚博等. 基于并五苯/酞菁铅异质结的近红外光敏有机场效应管[J]. 发光学报, 2014,35(3): 342-348 DOI： 10.3788/fgxb20143503.0342.

ZHOU Mao-qing, LI Yao, YAO Bo etc. Near Infrared Photoresponsive Organic Field-effect Transistors by Utilizing Pentacene/Lead Phthalocyanine Heterojunction[J]. Chinese Journal of Luminescence, 2014,35(3): 342-348 DOI： 10.3788/fgxb20143503.0342.

摘要

采用并五苯（Pentacene）和酞菁铅（PbPc）两种有机材料作为有源层

制备了异质结有机光敏场效应管。在波长为808 nm、强度为124 mW/cm

的近红外光照条件下，异质结phOFET获得最大的光暗电流比达4.410

，栅压为-50 V时的最大光响应度为118 mA/W，比单层酞菁铅phOFET分别高出766倍和785倍。在经过120 h后，器件的最大光暗电流比和最大光响应度分别稳定于5.410

和326 mA/W附近。由于在异质结phOFET中采用了对近红外光具有高吸收效率的酞菁铅作为光敏层

而高空穴迁移率的并五苯材料作为靠近栅介质的沟道层，光生载流子的产生与传输能力得到了有效的提高。实验结果表明，基于并五苯/酞菁铅的有机异质结应用于光敏有机场效应管的结构设计中，可以使phOFET成为一种同时具有良好光敏性及稳定性的近红外光探测器件。

Abstract

Photoresponsive organic field-effect transistors (phOFETs) were fabricated by utilizing organic heterojunction based on pentacene and lead phthalocyanine (PbPc). Under a near-infrared light illumination (wavelength 808 nm and a power intensity of 124 mW/cm

)

the heterojunction photoresponsive organic field-effect transistors (HJ-phOFETs) exhibited a maximum photosensitivity of 4.410

and a maximum photoresponsivity of 118 mA/W

which were 766 times and 785 times higher than that of PbPc single-layer phOFET

respectively. It was observed that the maximum photosensitivity and the maximum photoresponsivity stabilized around 5.410

and 326 mA/W after 120 h

respectively. The high performance of HJ-phOFET is attributed to the utilization of PbPc as photosensitive layer which has high absorbance in near infrared region (NIR) and pentacene as channel layer with high hole mobility. These results indicate that the HJ-phOFET based on pentacene and PbPc is proved to be a NIR photodetector with excellent photosensitivity and stability.

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references

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