超薄EuF3电极修饰层对有机场效应晶体管性能的提升

李红; 甘至宏; 刘星元

doi:10.3788/fgxb20143502.0238

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超薄EuF₃电极修饰层对有机场效应晶体管性能的提升

器件制备及器件物理 | 更新时间：2020-08-12

- 超薄EuF₃电极修饰层对有机场效应晶体管性能的提升
- Improvements of Organic Field-effect Transistors by Introducing An EuF₃ Ultra-thin Film as Modified Layer Electrode
- 发光学报 2014年35卷第2期页码：238-242
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61106057）资助项目()
- DOI：10.3788/fgxb20143502.0238
  中图分类号： TN383+.1
- 收稿日期：2013-09-12，
  
  修回日期：2013-10-31，
  
  纸质出版日期：2014-02-03
- 稿件说明：
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李红, 甘至宏, 刘星元. 超薄EuF3电极修饰层对有机场效应晶体管性能的提升[J]. 发光学报, 2014,35(2): 238-242

LI Hong, GAN Zhi-hong, LIU Xing-yuan. Improvements of Organic Field-effect Transistors by Introducing An EuF3 Ultra-thin Film as Modified Layer Electrode[J]. Chinese Journal of Luminescence, 2014,35(2): 238-242
李红, 甘至宏, 刘星元. 超薄EuF3电极修饰层对有机场效应晶体管性能的提升[J]. 发光学报, 2014,35(2): 238-242 DOI： 10.3788/fgxb20143502.0238.

LI Hong, GAN Zhi-hong, LIU Xing-yuan. Improvements of Organic Field-effect Transistors by Introducing An EuF3 Ultra-thin Film as Modified Layer Electrode[J]. Chinese Journal of Luminescence, 2014,35(2): 238-242 DOI： 10.3788/fgxb20143502.0238.

摘要

采用EuF

薄层修饰低功函数金属Ag源、漏电极，制备了CuPc有机场效应晶体管，研究了不同厚度EuF

对器件性能的影响。结果表明，EuF

的厚度由0 nm增至0.6 nm时，接触电阻由23.6510

cm减至3.8610

cm，使得器件载流子迁移率由1.510

-3

-1

提高到4.6510

-3

-1

。 UPS测试结果表明，薄层EuF

在Ag与有机半导体间形成了界面偶极势垒，使源漏电极表面功函数增大，空穴注入势垒降低，Ag电极与有机半导体层界面的接触电阻减小，进而提升了空穴的注入效率。

Abstract

Europium fluoride (EuF

) was employed to modify the source and drain electrodes in CuPc based OFETs

in which they were fabricated by low work function metal Ag. The Influence of EuF

with different thickness on devices was investigated. The contact resistance reduced from 23.6510

cm to 3.8610

cm as the thickness of EuF

increased from 0 nm to 0.6 nm

which lead to an increased field-effect mobility from 1.510

-3

-1

to 4.6510

-3

-1

. The UPS results show that an interfacial dipole potential is formed between the silver electrodes and the organic semiconductor layer. It raises the surface work function of the source and drain electrodes and reduces the hole injection barrier

thus decreases the contact resistance and improves the hole injection efficiency.

关键词

Keywords

references

Dimitrakopoulos C D, Purushothaman S, Kymissis J, et al. Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators [J]. Science, 1999, 283(5403):822-824. [2] Dimitrakopoulos C D, Malenfant P R L. Organic thin film transistors for large area electronics [J]. Adv. Mater., 2002, 14(2):99-117. [3] McCarthy M A, Liu B, Donoghue E P, et al. Low-voltage, low-power, organic light-emitting transistors for active matrix displays [J]. Science, 2011, 332(6029):570-573. [4] Guo Y L, Yu G, Liu Y Q. Functional organic field-effect transistors [J]. Adv. Mater., 2010, 22(40):4427-4447. [5] Ma F, Wang S, Li X. Synthesis, spectral characterization of CuPcF16 and its application in organic thin film transistors using p-6p as inducing layer [J]. J. Phys. Chem. Solids, 2012, 73(4):589-592. [6] Wang J, Wang H B, Zhang J, et al. Organic thin-film transisitors with improved characteristics using lutetium bisphthalocyanine as a buffer layer [J]. Appl. Phys. Lett., 2005, 97(2):026106-1-3. [7] Chen F, Kung L, Chen T. Copper phthalocyanine buffer layer to enhance the charge injection inorganic thin-film transistors [J]. Appl. Phys. Lett., 2007, 90(7):073504-1-3. [8] Li J, Zhang X W, Zhang L, et al. MoOx interlayer to enhance performance of pentacene-TFTs with low-cost copper electrodes [J]. Synth. Met., 2010, 160(5):376-379. [9] Janssen A G F, Riedl T, Hamwi S, et al. Highly efficient organic tandem solar cells using an improved connecting architecture [J]. Appl. Phys. Lett., 2007, 91(7):073519-1-3. [10] Alam M W, Wang Z K, Naka S, et al. Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes [J]. Appl. Phys. Lett., 2013, 102(6):061105-1-3. [11] Minari T, Darmawan P, Liu C, et al. Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact [J]. Appl. Phys. Lett., 2012, 100(9):093303-1-3. [12] Ganzorig C, Fujihira M. Improved drive voltages of organic electroluminescent devices with an efficient p-type aromatic diamine hole-injection layer [J]. Appl. Phys. Lett., 2000, 77(25):4211-4213. [13] Zhao J M, Zhang S T, Wang X J, et al. Dual role of LiF as a hole injection buffer in organic light emitting diodes [J]. Appl. Phys. Lett., 2004, 84(15):2913-2915. [14] Liu X, Liu H, Xue Y Z. Organic thin film transistors modified OTS with different thicknesses of CuPc [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2009, 24(1):66-70 (in Chinese). [15] Hu Y, Lu Q, Li H, et al. Low voltage, high mobility air-stable ambipolar organic field-effect transistors with a voltage-dependent off-current state and modest operational stability [J]. Appl. Phys. Exp., 2013, 6(5):051602-1-5.. [16] Zhang N, Hu Y, Liu X. Transparent organic thin film transistors with WO3/Ag/WO3 source-drain electrodes fabricated by thermal evaporation [J]. Appl. Phys. Lett., 2013, 103(3):033301-1-3. [17] Koch N, Kahn A, Ghijsen J, et al. Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanism [J]. Appl. Phys. Lett., 2003, 82(1):70-72. [18] Narioka S, Ishii H, Yoshimura D, et al. The electronic structure and energy level alignment of porphyrin/metal interfaces studied by ultraviolet photoelectron spectroscopy [J]. Appl. Phys. Lett., 1995, 67(13):1899-1901.

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