51 V GaN基高压LED的热分析

俞鑫; 郭伟玲; 樊星; 白俊雪; 程顺波; 韩禹

doi:10.3788/fgxb20143502.0213

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51 V GaN基高压LED的热分析

器件制备及器件物理 | 更新时间：2020-08-12

- 51 V GaN基高压LED的热分析
- Thermal Analysis of 51 V GaN-based High Voltage LED
- 发光学报 2014年35卷第2期页码：213-217
- 作者机构：
  
  北京工业大学光电子技术省部共建教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
  
  国家科技支撑计划（2011BAE01B14）();国家自然科学基金（61107026）();北京市教委基金（KM201210005004）资助项目()
- DOI：10.3788/fgxb20143502.0213
  中图分类号： TN383+.1
- 收稿日期：2013-10-09，
  
  修回日期：2013-11-08，
  
  纸质出版日期：2014-02-03
- 稿件说明：
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俞鑫, 郭伟玲, 樊星等. 51 V GaN基高压LED的热分析[J]. 发光学报, 2014,35(2): 213-217

YU Xin, GUO Wei-ling, FAN Xing etc. Thermal Analysis of 51 V GaN-based High Voltage LED[J]. Chinese Journal of Luminescence, 2014,35(2): 213-217
俞鑫, 郭伟玲, 樊星等. 51 V GaN基高压LED的热分析[J]. 发光学报, 2014,35(2): 213-217 DOI： 10.3788/fgxb20143502.0213.

YU Xin, GUO Wei-ling, FAN Xing etc. Thermal Analysis of 51 V GaN-based High Voltage LED[J]. Chinese Journal of Luminescence, 2014,35(2): 213-217 DOI： 10.3788/fgxb20143502.0213.

摘要

设计并制备了51 V高压LED。对器件进行了大电流冲击试验并对器件的损毁原因进行了分析。运用有限元分析软件ANSYS对LED关键结构部位进行参数化建模及热分布模拟，得到其稳态的温度场分布;然后经过与红外热像仪成像图对比，得出电极烧毁的原因在于芯粒连接处的电极过薄过窄而导致的电阻过大，为后续设计更可靠的高压LED提供了参考。对芯片分别进行蓝光及色温5 000 K的白光封装，并分别测量了热阻，涂覆荧光粉的白光灯珠的热阻要比没有涂覆荧光粉的蓝光灯珠高约4℃/W。同时，51 V高压LED的热阻比1 W大功率LED要高，说明高压LED的散热性能比常规LED要差，这可能与高压LED具有深沟槽及众多的互联电极结构有关。

Abstract

51 V high voltage LED (HV LED) was designed and fabricated. Firstly

the HV LED was tested by large current attack

then the damage reason was analyzed. The key part's thermal parameters distribution model of HV LED was simulated by using finite element analysis software ANSYS

and the steady distribution of temperature was achieved. By analyzing the infrared thermal image

the reason of HV LED failure after large current attack was gotten. The core particle electrode burned at the connection part which was thin and narrow

so the resistance was large. It provided a good reference for the sequence design of more reliable HV LED. Meanwhile

the chips were packaged into white lamp with color temperature of 5 000 K and blue lamp

respectively. The thermal resistance of the white lamp was about 4℃/W higher than the blue lamp without phosphor coating

and it was also higher than the conventional 1 W LED. The deep groove structure and numerous interconnected electrode structure of HV LED may be the reason of the thermal performance of high voltage LED worse than the conventional 1 W LED.

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Keywords

references

Schubert E F. Light-emitting Diodes [M]. Cambridge: Cambridge University Press, 2006:64-66. [2] Huang E L, Wang Y N, Ni X X. Brightness enhancement in LED lighting sequential colorized projection systems [J]. J. Optoelectronics Laser (光电子激光), 2010, 21(4):508-511 (in Chinese). [3] Zhou Z, Feng S W, Zhang G C, et al. The aging characteristics of high-power GaN-based white light-emitting diodes [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1046-1050 (in Chinese). [4] Kudryk Y Y, Zinovchuk A V. Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading [J]. Semi. Sci. Technol., 2011, 26(9):095007-1-5. [5] Malyutenko V K, Bolgov S S, Podoltsev A D. Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes [J]. Appl. Phys. Lett., 2010, 97(25):251110-1-3. [6] Wang C H, Lin D W, Lee C Y, et al. Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes [J]. IEEE Elect. Dev. Lett., 2011, 32(8):1098-1100. [7] Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes [J]. Appl. Phys. Lett.. 2007, 91(18):183507-1-3. [8] Cao D X, Guo Z Y, Liang F B, et al. The fabrication and performance analysis of GaN-based HV LED [J]. Acta Phys. Sinica (物理学报), 2012, 61(13):511-517 (in Chinese). [9] Zhuang P. Thermal resistance measurement and structure identification for high-power LED [J]. Adv. Disp.(现代显示), 2008, 91:26-27 (in Chinese).

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