铁钝化多孔硅的制备及光致发光机理研究

陈景东; 张婷

doi:10.3788/fgxb20143502.0184

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铁钝化多孔硅的制备及光致发光机理研究

材料合成及性能 | 更新时间：2020-08-12

- 铁钝化多孔硅的制备及光致发光机理研究
- Fabrication and Photoluminescence Mechanism of Iron-passivated Porous Silicon
- 发光学报 2014年35卷第2期页码：184-189
- 作者机构：
  
  1. 闽南师范大学物理与信息工程学院,福建漳州,363000
  2. 闽南师范大学化学与环境科学系,福建漳州,363000
- 作者简介：
- 基金信息：
  
  闽南师范大学科研基金（SK08013）资助项目()
- DOI：10.3788/fgxb20143502.0184
  中图分类号： O482.31
- 收稿日期：2013-11-06，
  
  修回日期：2013-12-20，
  
  纸质出版日期：2014-02-03
- 稿件说明：
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陈景东, 张婷,. 铁钝化多孔硅的制备及光致发光机理研究[J]. 发光学报, 2014,35(2): 184-189

CHEN Jing-dong, ZHANG Ting,. Fabrication and Photoluminescence Mechanism of Iron-passivated Porous Silicon[J]. Chinese Journal of Luminescence, 2014,35(2): 184-189
陈景东, 张婷,. 铁钝化多孔硅的制备及光致发光机理研究[J]. 发光学报, 2014,35(2): 184-189 DOI： 10.3788/fgxb20143502.0184.

CHEN Jing-dong, ZHANG Ting,. Fabrication and Photoluminescence Mechanism of Iron-passivated Porous Silicon[J]. Chinese Journal of Luminescence, 2014,35(2): 184-189 DOI： 10.3788/fgxb20143502.0184.

摘要

采用水热腐蚀法在相同环境下制备了不同晶型的铁钝化多孔硅样品。同一样品表面具有相似的孔隙结构，不同样品形貌存在差异。在300 nm光激发下，样品发光峰位于618 nm附近，半高宽约为132 nm。傅立叶红外变换光谱显示样品中有强的SiSi、SiOSi、O

ySiH

化学键振动吸收。结果表明，水热腐蚀法制备的铁钝化多孔硅表面形貌与腐蚀过程的局域电极分布关系密切。样品的光致发光行为可归因于量子限制-发光中心作用，并受非桥氧空穴发光中心数量影响。

Abstract

Hydrothermal etching method was employed to fabricate four iron-passivated porous silicon (IP-Si) samples on two silicon wafers with different crystal orientations. The morphology of the samples was observed by scanning electron microscope (SEM)

and no correlation between the porous structures and the crystal orientation was found. Under 300 nm excitation

the samples emitted strong orange light with a peak at ～618 nm and FWHM of ～132 nm. Furthermore

Fourier transform infrared spectroscopy was employed to characterize the chemical bonds on the surface of porous structures. Finally

the physical mechanism for the photoluminescence of IP-Si was interpreted by using the quantum confinement-luminescence center model

and the tiny difference in PL can be ascribed to the small inconsistency of non-bridging oxygen hole center distributed in IP-Si.

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references

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