基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征

熊贤风; 元淼; 林广庆; 王向华; 吕国强

doi:10.3788/fgxb20143501.0105

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基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征

器件制备及器件物理 | 更新时间：2020-08-12

- 基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征
- Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)
- 发光学报 2014年35卷第1期页码：105-112
- 作者机构：
  
  1. 合肥工业大学电子科学与应用物理学院,安徽合肥,230009
  2. 合肥工业大学仪器科学与光电工程学院,安徽合肥,230009
  3. 特种显示技术教育部重点实验室特种显示技术国家工程实验室现代显示技术省部共建国家重点实验室培育基地合肥工业大学光电技术研究院, 安徽合肥 230009
- 作者简介：
- 基金信息：
  
  国家自然科学基金（21174036，51103034，51203039）();&ldquo();973();计划前研专项（2012CB723406）资助项目()
- DOI：10.3788/fgxb20143501.0105
  中图分类号： O484.4;TN383+.1
- 收稿日期：2013-08-29，
  
  修回日期：2013-10-20，
  
  纸质出版日期：2014-01-03
- 稿件说明：
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熊贤风, 元淼, 林广庆, 王向华, 吕国强. 基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征[J]. 发光学报, 2014,35(1): 105-112

XIONG Xian-feng, YUAN Miao, LIN Guang-qing, WANG Xiang-hua, LYU Guo-qiang. Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)[J]. Chinese Journal of Luminescence, 2014,35(1): 105-112
熊贤风, 元淼, 林广庆, 王向华, 吕国强. 基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征[J]. 发光学报, 2014,35(1): 105-112 DOI： 10.3788/fgxb20143501.0105.

XIONG Xian-feng, YUAN Miao, LIN Guang-qing, WANG Xiang-hua, LYU Guo-qiang. Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)[J]. Chinese Journal of Luminescence, 2014,35(1): 105-112 DOI： 10.3788/fgxb20143501.0105.

摘要

采用旋涂法预先在SiO

衬底表面形成一层聚（4-乙烯基苯酚）（PVP）作为表面修饰层，以喷墨打印的6，13-双（三异丙基甲硅烷基乙炔基）并五苯（TIPS并五苯）作为有源层制作有机薄膜晶体管，有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极，形成底栅顶接触结构的有机薄膜晶体管（OTFT）器件。作为对比，在未经过表面修饰的SiO

衬底上采用相同条件打印TIPS并五苯薄膜晶体管，发现在经过PVP修饰的SiO

衬底上打印的单点厚度更均匀，咖啡环效应被抑制或被消除；而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大，相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT，器件在饱和区的平均场效应迁移率达到了0.065 cm

-1

；而直接在SiO

衬底上制作的器件，相应的平均场效应迁移率仅为0.02 cm

-1

。

Abstract

Organic thin-film transistors (OTFTs) were prepared with inkjet-printed 6

13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the active semiconducting layer. Poly(4-vinylphenol) (PVP) was spin-coated on the surface of SiO

substrates as the surface modification layer to improve film morphology of the semiconductor. The source and drain electrodes were thermally eva-porated through a metal mask to complete the OTFTs with a bottom-gate top-contact (BGTC) structure. Compared with the TIPS-pentacene films inkjet-printed on the controlled SiO

substrate without PVP modification layer

the single-drop semiconductor films deposited on the PVP-modified substrate show much reduced coffee-ring effect and therefore better film uniformity

while large-area films with rectangular pattern printed with overlapping multi-drop shows larger grain size and the corresponding OTFTs also exhibits enhanced field-effect mobility. The average field-effect mobility of the inkjet-printed film on the PVP-modified substrate was as high as 0.065 cm

-1

while the average field-effect mobility of the semiconductor directly printed on the SiO

substrate was merely 0.02 cm

-1

关键词

Keywords

references

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