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北京工业大学 光电子技术省部共建教育部重点实验室, 北京 100124
收稿日期:2013-09-14,
修回日期:2013-11-13,
纸质出版日期:2014-01-03
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白俊雪, 郭伟玲, 俞鑫, 樊星, 刘建鹏, 韩禹. 注入电流对绿光高压LED光电特性的影响[J]. 发光学报, 2014,35(1): 101-104
BAI Jun-xue, GUO Wei-ling, YU Xin, FAN Xing, LIU Jian-peng, HAN Yu. Effects of Injection Current on Optical and Electrical Properties of GaN-based Green High Voltage LED[J]. Chinese Journal of Luminescence, 2014,35(1): 101-104
白俊雪, 郭伟玲, 俞鑫, 樊星, 刘建鹏, 韩禹. 注入电流对绿光高压LED光电特性的影响[J]. 发光学报, 2014,35(1): 101-104 DOI: 10.3788/fgxb20143501.0101.
BAI Jun-xue, GUO Wei-ling, YU Xin, FAN Xing, LIU Jian-peng, HAN Yu. Effects of Injection Current on Optical and Electrical Properties of GaN-based Green High Voltage LED[J]. Chinese Journal of Luminescence, 2014,35(1): 101-104 DOI: 10.3788/fgxb20143501.0101.
设计并制备了12 V 的GaN基绿光高压发光二极管(LED),并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明:电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。
GaN-based green high-voltage (HV) light emitting diodes (LEDs) of 12 V were designed and fabricated. The optical and electrical parameters such as forward voltage
peak of wavelength
optical power
and luminous efficiency were investigated when the injection current varied from 3 mA to 50 mA at 25 ℃. The results show that the injection current has a great effect on the optical and electrical properties of the GaN-based high-voltage LED. When the current is 20 mA
the corresponding voltage is 14 V. With the increasing of the injection current
the blue-shift of LED peak wavelength reaches 2 nm. In addition
the optical power increases approximately linearly with the current increasing. The luminous efficiency decreases 61% when the injection current increases from 3 mA to 20 mA
and decreases 39% when the injection current increases from 20 mA to 50 mA. It indicates that the luminous efficiency decreases more slowly when the high-voltage LED is driven by large current. These results will have a certain reference value for the improvement and optimization of GaN-based high-voltage LEDs.
Daniel A S, Jerome C B, Dave C, et al. Illumination with solid state lighting technology[J]. IEEE J. Sel. Top. in Quant. Electr., 2002, 8(2):310-319.[2] Huang E L, Wang Y N, Ni X X. Brightness enhancement in LED lighting sequential colorized projection systems[J]. J. OptoelectronicsLaser (光电子激光), 2010, 21(4):508-511 (in Chinese).[3] Bai S M, Wang J M, Hong L. A new white light emitting diodes with enhanced red intensity[J]. J. OptoelectronicsLaser (光电子激光), 2010, 21(9):1298-1300 (in Chinese).[4] Cao D X, Guo Z Y, Liang F B, et al. The fabrication and performance analysis of GaN-based HV LED[J]. Chin. Phys. Sinica (物理学报), 2012, 61(13):511-517 (in Chinese).[5] Kuokstis E, Yang J W, Simin G, et al. Two mechanisms of blue shift of edge emission in InGaN-based epilayers and multiple quantum wells[J]. Appl. Phys. Lett., 2002, 80(6):977-979.[6] Yukio N, Yoichi K, Shizuo F, et al. Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells[J]. Phys. Rev. B, 1997, 55(4):1938-1941.[7] Ding T P, Guo W L, Cui B F, et al. The effect of temperature on spectral characteristics of power LED[J]. Spectrosc. Spect. Anal.(光谱学与光谱分析), 2011, 31(6):1450-1453(in Chinese).[8] Wang C H, Lin D W, Lee C Y, et al. Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes[J]. IEEE Elect. Dev. Lett., 2011, 32(8):1098-1100.[9] Li Y L, Huang Y R, Lai Y H. Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light emitting diodes with varying quantum well thickness[J]. Appl. Phys. Lett., 2007, 91(18):181113-1-3.[10] Ansgar L, Matthias S, Johannes B, et al. High power and high-efficiency InGaN-based light emitters[J]. IEEE Transactions on Electron Devices, 2010, 57(1):79-87.[11] Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes[J]. Appl. Phys. Lett., 2007, 91(18):183507-1-3.[12] Piperk J. Efficiency droop in nitride-based light-emitting diodes[J]. Phys Stat. Sol. A, 2010, 207(10):2217-2225.
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