808 nm垂直腔面发射激光器列阵的温度特性分析

张金胜; 宁永强; 张金龙; 张建伟; 张建; 王立军

doi:10.3788/fgxb20133412.1636

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808 nm垂直腔面发射激光器列阵的温度特性分析

器件制备及器件物理 | 更新时间：2020-08-12

- 808 nm垂直腔面发射激光器列阵的温度特性分析
- Temperature Characteristic Analysis of 808 nm Vertical Cavity Surface Emitting Laser Arrays
- 发光学报 2013年34卷第12期页码：1636-1640
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金（51172225，11074247，61204056，61106047）;国家自然科学基金重点项目（90923037）资助
- DOI：10.3788/fgxb20133412.1636
  中图分类号： TN248.4
- 收稿日期：2013-07-12，
  
  修回日期：2013-08-16，
  
  纸质出版日期：2013-12-10
- 稿件说明：
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张金胜, 宁永强, 张金龙, 张建伟, 张建, 王立军. 808 nm垂直腔面发射激光器列阵的温度特性分析[J]. 发光学报, 2013,34(12): 1636-1640

ZHANG Jin-sheng, NING Yong-qiang, ZHANG Jin-long, ZHANG Jian-wei, ZHANG Jian, WANG Li-jun. Temperature Characteristic Analysis of 808 nm Vertical Cavity Surface Emitting Laser Arrays[J]. Chinese Journal of Luminescence, 2013,34(12): 1636-1640
张金胜, 宁永强, 张金龙, 张建伟, 张建, 王立军. 808 nm垂直腔面发射激光器列阵的温度特性分析[J]. 发光学报, 2013,34(12): 1636-1640 DOI： 10.3788/fgxb20133412.1636.

ZHANG Jin-sheng, NING Yong-qiang, ZHANG Jin-long, ZHANG Jian-wei, ZHANG Jian, WANG Li-jun. Temperature Characteristic Analysis of 808 nm Vertical Cavity Surface Emitting Laser Arrays[J]. Chinese Journal of Luminescence, 2013,34(12): 1636-1640 DOI： 10.3788/fgxb20133412.1636.

摘要

为了研究温度对808 nm InGaAlAs垂直腔面发射激光器（VCSEL）列阵输出特性的影响，通过变温塞耳迈耶尔方程计算了InGaAlAs量子阱VCSEL的温度漂移系数。采用非闭合环结构，制备了22 的808 nm垂直腔面发射激光器列阵，每个单元的出光口径为60 m。通过热沉温度调节，对不同温度下的列阵激射波长、光功率以及阈值电流进行了测量。在温度为20 ℃、脉宽为50 s、重复频率为100 Hz的脉冲条件下，列阵的最大输出功率达到56 mW，中心光谱值为808.38 nm，光谱半宽为2.5 nm，连续输出功率达到22 mW。通过变温测试，发现输出功率在50 ℃以上衰减剧烈，列阵的温漂系数为0.055 nm/℃。实验测得的温漂系数与理论值保持一致。

Abstract

In order to study the output characteristics of 808 nm InGaAlAs vertical cavity surface emitting laser (VCSEL) array at different temperature

the InGaAlAs VCSEL temperature shift is calculated under the temperature-dependent Sellmeier equation. 22 arrays of 808 nm VCSEL are fabricated with non-closed structure. Each emitter diameter is 60 m. Lasing wavelength

optical power and the threshold current are measured by changing the temperature of heat sink. The maximum output power reaches 56 mW in the pulse width of 50 s

and the repetition frequency of 100 Hz at 20 ℃. The central wavelength is 808.38 nm

and the full width at half maximum is 2.5 nm

continuous output power reaches 22 mW

the output power decreases rapidly above 50 ℃

the temperature shift is 0.055 nm/℃. Experimental temperature shift is consistent with the theoretical value.

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Keywords

references

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