荧光染料掺杂的高效率、高亮度白色有机电致发光器件

张刚; 田晓萃; 高永慧; 常喜; 汪津; 姜文龙; 张希艳

doi:10.3788/fgxb20133412.1603

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荧光染料掺杂的高效率、高亮度白色有机电致发光器件

器件制备及器件物理 | 更新时间：2020-08-12

- 荧光染料掺杂的高效率、高亮度白色有机电致发光器件
- High Efficiency and Luminance White OLED Based on Fluorescence Dopant
- 发光学报 2013年34卷第12期页码：1603-1606
- 作者机构：
  
  1. 长春理工大学材料科学与工程学院,吉林长春,130022
  2. 吉林师范大学信息技术学院功能材料物理与化学教育部重点实验室,吉林四平,136000
- 作者简介：
- 基金信息：
  
  国家自然科学基金（50772016）;吉林省科技发展计划（20100510，20101512，201215221）;吉林省教育厅“十二五”科学技术研究项目（2011154，2012175，2012176，2013208）资助
- DOI：10.3788/fgxb20133412.1603
  中图分类号： TN383+.1
- 收稿日期：2013-07-23，
  
  修回日期：2013-08-29，
  
  纸质出版日期：2013-12-10
- 稿件说明：
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张刚, 田晓萃, 高永慧, 常喜, 汪津, 姜文龙, 张希艳. 荧光染料掺杂的高效率、高亮度白色有机电致发光器件[J]. 发光学报, 2013,34(12): 1603-1606

ZHANG Gang, TIAN Xiao-cui, GAO Yong-hui, CHANG Xi, WANG Jin, JIANG Wen-long, ZHANG Xi-yan. High Efficiency and Luminance White OLED Based on Fluorescence Dopant[J]. Chinese Journal of Luminescence, 2013,34(12): 1603-1606
张刚, 田晓萃, 高永慧, 常喜, 汪津, 姜文龙, 张希艳. 荧光染料掺杂的高效率、高亮度白色有机电致发光器件[J]. 发光学报, 2013,34(12): 1603-1606 DOI： 10.3788/fgxb20133412.1603.

ZHANG Gang, TIAN Xiao-cui, GAO Yong-hui, CHANG Xi, WANG Jin, JIANG Wen-long, ZHANG Xi-yan. High Efficiency and Luminance White OLED Based on Fluorescence Dopant[J]. Chinese Journal of Luminescence, 2013,34(12): 1603-1606 DOI： 10.3788/fgxb20133412.1603.

摘要

制备了结构为 ITO/NPB（30 nm）/Rubrene（0.2 nm）/CBP：Bczvbi（8 nm，

%）/Bphen（30 nm）/Cs

：Ag

O（2 nm，20%）/Al（100 nm）的器件。研究了Bczvbi掺杂浓度（

=5，10，15）对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性，得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时，器件的效率和亮度都为最大。驱动电压为7 V时，最大电流效率为4.61 cd/A；驱动电压为9 V时，最大亮度为21 240 cd/m

。当驱动电压从4 V增加到9 V时，色坐标从（0.36，0.38）变化为（0.27，0.29），均处于白光区域。

Abstract

The OLED devices were fabricated with the structure of ITO/NPB (30 nm)/Rubrene (0.2 nm)/CBP:Bczvbi (8 nm

%)/Bphen (30 nm)/Cs

:Ag

O (2 nm

20%)/Al (100 nm). The effect of different CBP:Bczvbi doping concentration (

15) on the properties of white light device was studied. High luminance and efficiency white organic light-emitting diodes (OLEDs) were obtained comprehensively utilizing the energy transfer between the host and the guset in the luminous layer and the hole-blocking characteristics. The device had the maximum efficiency and luminance when the mass fraction of Bczvbi was 10%. This device had a maximum current efficiency of 4.61 cd/A at 7 V and maximum luminance of 21 240 cd/m

at 9 V. The CIE coordinates of the device were well within the white region when the voltage changed from 4 V to 9 V.

关键词

Keywords

references

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