双条形电极结构AlGaInP-LED微阵列器件的设计和实验研究

田超; 梁静秋; 梁中翥; 秦余欣; 王维彪

doi:10.3788/fgxb20133411.1494

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双条形电极结构AlGaInP-LED微阵列器件的设计和实验研究

器件制备及器件物理 | 更新时间：2020-08-12

- 双条形电极结构AlGaInP-LED微阵列器件的设计和实验研究
- Design and Experiment of AlGaInP Mircro-LED Arrays with Double Strip Electrode
- 发光学报 2013年34卷第11期页码：1494-1499
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61274122,61007023)();吉林省科技发展项目(20100351,20120323)资助项目()
- DOI：10.3788/fgxb20133411.1494
  中图分类号： TN312.8
- 收稿日期：2013-08-24，
  
  修回日期：2013-10-08，
  
  纸质出版日期：2013-11-10
- 稿件说明：
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田超, 梁静秋, 梁中翥, 秦余欣, 王维彪. 双条形电极结构AlGaInP-LED微阵列器件的设计和实验研究[J]. 发光学报, 2013,34(11): 1494-1499

TIAN Chao, LIANG Jing-qiu, LIANG Zhong-zhu, QIN Yu-xin, WANG Wei-biao. Design and Experiment of AlGaInP Mircro-LED Arrays with Double Strip Electrode[J]. Chinese Journal of Luminescence, 2013,34(11): 1494-1499
田超, 梁静秋, 梁中翥, 秦余欣, 王维彪. 双条形电极结构AlGaInP-LED微阵列器件的设计和实验研究[J]. 发光学报, 2013,34(11): 1494-1499 DOI： 10.3788/fgxb20133411.1494.

TIAN Chao, LIANG Jing-qiu, LIANG Zhong-zhu, QIN Yu-xin, WANG Wei-biao. Design and Experiment of AlGaInP Mircro-LED Arrays with Double Strip Electrode[J]. Chinese Journal of Luminescence, 2013,34(11): 1494-1499 DOI： 10.3788/fgxb20133411.1494.

摘要

设计了一种基于AlGaInP发光材料的像素为320240、单元像素面积为100 m100 m 微型LED阵列。通过仿真和分析

设计了一种双条形电极结构。考虑到不同电极宽度下的电流分布情况以及电极的遮光效应

设计了电极宽度为13 m 的优化电极结构

使得每个发光像素的表面出光面积比为50.15%

并分析了电极对有源层出射的光的反射影响。制定了基于MOEMS工艺的微型LED器件的制作流程并进行了基本实验研究

最终给出了制作出的上电极的单个单元照片。

Abstract

An array of 320240 micro-LED based on AlGaInP epitaxial wafer with the pixel size of 100 m100 m were designed. By analyzing and simulating the current distribution of the active layer

the AlGaInP mircro-LED arrays with a kind of double strip electrode were designed. Conside-ring the current distribution of electrode with different widths and the shelter of the electrode

the optimized electrode was gotten with the width of 13 m

and the ratio of emitting area to each pixel is 50.15%. Besides

a fabrication process of the device based on MOEMS technology was presented. Finally

the picture of the double strip electrode was exhibited.

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references

Tu D W, Wu R M, Yang H L, et al. Effect of optical structure on output light intensity distribution in LED package [J]. Opt. Precision Eng.(光学精密工程), 2008, 16(5):832-838 (in Chinese).[2] Li X B, Gao Y Q, Ji Y F, et al. Development of optical particle counters of LED lamp-house [J]. Opt. Precision Eng.(光学精密工程), 2008, 16(3):406-409 (in Chinese).[3] Ruan H R, Xia G Y. Brightness correction method of LED display based on photographing [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2012, 27(2):193-197(in Chinese).[4] Zhao Z Q, Wang R G, Zheng X F, et al. Systemic accuracy analysis of LED displays based on visual perception [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2012, 27(3):324-331 (in Chinese).[5] Kent M G, Kent D C, Darwin K S, et al. Fabrication and performance of two-dimensional matrix addressable arrays of integrated vertical-cavity lasers and resonant cavity photodetectors [J]. IEEE J. Sel. Top. Quant., 2002, 8(4):943-947.[6] Jin S X, Li J, Lin J Y, et al. InGaN/GaN quantum well interconnected microdisk light emitting diodes [J]. Appl. Phys. Lett., 2000, 77(20):3236-3238.[7] Russell D D, Michael R K. History, development, and apllications of high-brightness visible light-emitting diodes [J]. J. Lightwave Technol., 2008, 26(9):1154-1171.[8] Kish F A, De Fevere D A, Van der Water D A, et al. High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters [J]. Electron Lett., 1994, 30(21):1790-1792.[9] Hofler G E, Coman C C, Krames M R, et al. High flux, high-efficiency transparent substrate AlGaInP/GaP light-emitting diodes [J]. Electron. Lett., 1998, 34(18):1781-1782.[10] Zhang J M, Zou D S, Xu C, et al. Effect s of optimized contact scheme on the performance of high power GaN based light emitting diodes [J]. Acta Phys. Sinica (物理学报), 2007, 56(10):6003-6007 (in Chinese).[11] Zhang J B, Lin Y M, Bo L, et al. Optimization of the electrode shape of AlGaInP LED [J]. Acta Phys. Sinica (物理学报), 2008, 57(9):5881-5886 (in Chinese).[12] Song X Y, Zhang J B, Zheng X H, et al. Effects of electrode shape on the properties of GaN-based light-emitting diode [J]. Acta Phys. Sinica (物理学报), 2010, 59(7):4989-4995 (in Chinese).[13] Markus C A, Franz K. Analytical solution for the lateral current distribution in multiple stripe laser diodes [J]. Appl. Phys. Lett., 1986, 48(25):1710-1712.[14] Yin Y, Liang J Q, Liang Z Z, et al. Effects of electrode structure on the current distribution of AlGaInP-LED array [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1051-1056 (in Chinese).[15] Wang G H, Ma X Y, Peng H D, et al. Determinants of light extraction efficiency for AlGaInP high brightness light emitting diodes [J]. Acta Photonica Sinica (光子学报), 1998, 27(10):952-957 (in Chinese).

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