白光LED用Na0.35BaMo8O16：Eu3+荧光粉的发光性质

莎仁; 高娃; 刘叶平

doi:10.3788/fgxb20133411.1469

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白光LED用Na_0.35BaMo₈O₁₆：Eu³⁺荧光粉的发光性质

材料合成及性能 | 更新时间：2020-08-12

- 白光LED用Na_0.35BaMo₈O₁₆：Eu³⁺荧光粉的发光性质
- Luminescence Properties of Na_0.35BaMo₈O₁₆：Eu³⁺ Phosphor for White LED
- 发光学报 2013年34卷第11期页码：1469-1473
- 作者机构：
  
  1. 内蒙古师范大学化学与环境科学学院,内蒙古呼和浩特,010022
  2. 内蒙古自治区功能材料物理与化学重点实验室,内蒙古呼和浩特,010022
- 作者简介：
- 基金信息：
  
  内蒙古自治区自然科学基金(2010MS0219)();内蒙古自治区高等学校科学研究重点项目(NJZZ12030)资助()
- DOI：10.3788/fgxb20133411.1469
  中图分类号： O482.31
- 收稿日期：2013-07-14，
  
  修回日期：2013-09-13，
  
  纸质出版日期：2013-11-10
- 稿件说明：
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莎仁, 高娃, 刘叶平. 白光LED用Na0.35BaMo8O16：Eu3+荧光粉的发光性质[J]. 发光学报, 2013,34(11): 1469-1473

SHA Ren, GAO Wa, LIU Ye-ping. Luminescence Properties of Na0.35BaMo8O16：Eu3+ Phosphor for White LED[J]. Chinese Journal of Luminescence, 2013,34(11): 1469-1473
莎仁, 高娃, 刘叶平. 白光LED用Na0.35BaMo8O16：Eu3+荧光粉的发光性质[J]. 发光学报, 2013,34(11): 1469-1473 DOI： 10.3788/fgxb20133411.1469.

SHA Ren, GAO Wa, LIU Ye-ping. Luminescence Properties of Na0.35BaMo8O16：Eu3+ Phosphor for White LED[J]. Chinese Journal of Luminescence, 2013,34(11): 1469-1473 DOI： 10.3788/fgxb20133411.1469.

摘要

采用柠檬酸溶胶-凝胶法制备了Eu

掺杂的新型钼酸盐基Na

0.35

BaMo

红色荧光粉。利用X射线衍射、扫描电镜、红外光谱等方法对荧光粉的结构、形貌及组成进行了表征。结果表明

经800℃退火可以得到表面光滑基本呈长方体结构的Na

0.35

BaMo

:Eu

样品。在614 nm波长光的监测下

0.35

BaMo

:Eu

荧光粉的激发光谱为一宽带和系列锐峰

其最强激发峰出现在蓝光465 nm处

表明该荧光粉可以与广泛使用的蓝光LED芯片的输出波长相匹配。在465 nm蓝光的激发下

在Na

0.35

BaMo

中有位于614 nm处的非常强的

跃迁发射

色坐标值 (0.650 8

0.348 9)与标准红光的色坐标值(0.67

0.33)接近

有望成为一种潜在的适用于蓝光LED芯片的光转换红光材料。

Abstract

Novel red phosphors Eu

-doped Na

0.35

BaMo

were synthesized by sol-gel method. X-ray diffraction

scanning electron microscope and infrared spectra were used to characterize the crystal structure

morphology and composition of the Na

0.35

BaMo

:Eu

phosphors. The results revealed that the Na

0.35

BaMo

:Eu

had an overall smooth surface and a cuboid structure after heated under 800℃. The samples excitation spectra were broadband with a series of sharp peaks at 614 nm

and the highest excitation peak appeared at 465 nm

which indicated that the phosphors matched the light-emitting wavelength of the common blue-emitting InGaN chips. Under 465 nm light excitation

the emission spectra showed intense red-emission at 614 nm

which corresponded to the forced electric dipole

transitions on Eu

in this phosphor. Additionally

the CIE chromaticity coordinates (0.650 8

0.348 9) of Na

0.35

BaMo

0.8

:Eu

were close to the NTSC standard values (0.67

0.33). The results suggest that our material is potential red phosphors and can be used for blue-emitting InGaN chips.

关键词

Keywords

references

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