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1. 中国科学院半导体研究所 半导体超晶格国家重点实验室 北京,100083
2. 东北师范大学化学学院 多酸科学教育部重点实验室,吉林 长春,130024
收稿日期:2013-07-27,
修回日期:2013-09-02,
纸质出版日期:2013-11-10
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杨圣雪, 龚剑, 李京波, 夏建白. 紫外光控制的金属硫化物/聚苯胺p-n结及其在光敏传感器中的应用[J]. 发光学报, 2013,34(11): 1413-1418
YANG Sheng-xue, GONG Jian, LI Jing-bo, XIA Jian-bai. UV Light Controllable Depletion Zone of Metal Sulfide/Polyaniline p-n Junction and Its Application in A Photoresponsive Sensor[J]. Chinese Journal of Luminescence, 2013,34(11): 1413-1418
杨圣雪, 龚剑, 李京波, 夏建白. 紫外光控制的金属硫化物/聚苯胺p-n结及其在光敏传感器中的应用[J]. 发光学报, 2013,34(11): 1413-1418 DOI: 10.3788/fgxb20133411.1413.
YANG Sheng-xue, GONG Jian, LI Jing-bo, XIA Jian-bai. UV Light Controllable Depletion Zone of Metal Sulfide/Polyaniline p-n Junction and Its Application in A Photoresponsive Sensor[J]. Chinese Journal of Luminescence, 2013,34(11): 1413-1418 DOI: 10.3788/fgxb20133411.1413.
设计了由金属硫化物/聚苯胺p-n异质结和紫外光敏材料氧化锌所组成的光敏传感器
通过紫外光照外接氧化锌层来控制金属硫化物/聚苯胺p-n结的耗尽区厚度。与其他报道的光敏材料不同的是
其他光敏材料在紫外光照射下光电导会增加
而该光敏传感器在紫外光照射下光电导会减少。
A photoresponsive sensor that UV light controlled depletion zone thickness was report. This p-n junction depletion zone lies between the n-type ZnS and p-type polyaniline. The photoresponsive sensors were constructed by combining polyaniline/ZnS p-n heterojunction and ZnO nanorods. Different from the traditional photosensitive nanomaterials whose conductivity increases with UV illumination intensity
the conductivity of the photoresponsive sensor studied in this articles decreased when the UV light was turned on.
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