不同表面修饰制备高性能柔性薄膜晶体管

林广庆; 李鹏; 熊贤风; 吕国强; 王晓鸿; 邱龙臻

doi:10.3788/fgxb20133410.1392

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不同表面修饰制备高性能柔性薄膜晶体管

发光学应用及交叉前沿 | 更新时间：2020-08-12

- 不同表面修饰制备高性能柔性薄膜晶体管
- Preparation of High-performance Flexible Organic Thin-film Transistor Through Different Dielectric Surface Modification
- 发光学报 2013年34卷第10期页码：1392-1399
- 作者机构：
  
  1. 特种显示技术教育部重点实验室, 特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院, 安徽合肥 230009
  2. 合肥工业大学化工学院, 安徽合肥 230009
  3. 合肥工业大学仪器科学与光电工程学院, 安徽合肥 230009
- 作者简介：
- 基金信息：
  
  "();973"();计划前研专项 (2012CB723406)();国家自然科学基金(21174036,51103034)();教育部博士点基金 (2
- DOI：10.3788/fgxb20133410.1392
  中图分类号： TN321+.5
- 收稿日期：2013-06-05，
  
  修回日期：2013-08-01，
  
  纸质出版日期：2013-10-10
- 稿件说明：
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林广庆, 李鹏, 熊贤风, 吕国强, 王晓鸿, 邱龙臻. 不同表面修饰制备高性能柔性薄膜晶体管[J]. 发光学报, 2013,34(10): 1392-1399

LIN Guang-qing, LI Peng, XIONG Xian-feng, LV Guo-qiang, WANG Xiao-hong, QIU Long-zhen. Preparation of High-performance Flexible Organic Thin-film Transistor Through Different Dielectric Surface Modification[J]. Chinese Journal of Luminescence, 2013,34(10): 1392-1399
林广庆, 李鹏, 熊贤风, 吕国强, 王晓鸿, 邱龙臻. 不同表面修饰制备高性能柔性薄膜晶体管[J]. 发光学报, 2013,34(10): 1392-1399 DOI： 10.3788/fgxb20133410.1392.

LIN Guang-qing, LI Peng, XIONG Xian-feng, LV Guo-qiang, WANG Xiao-hong, QIU Long-zhen. Preparation of High-performance Flexible Organic Thin-film Transistor Through Different Dielectric Surface Modification[J]. Chinese Journal of Luminescence, 2013,34(10): 1392-1399 DOI： 10.3788/fgxb20133410.1392.

摘要

分别采用六甲基二硅胺(HMDS

Hexamethyldisilazane)和聚苯乙烯/氯硅烷复合材料修饰聚乙烯基苯酚(PVP)绝缘层制备了底接触的有机薄膜晶体管并研究了其半导体层的表面形貌和器件的电学性能。原子力显微镜观察发现

并五苯半导体薄膜在不同的界面修饰上的生长形貌产生了很大变化。在PVP上沉积的并五苯晶粒尺寸都小于150 nm

经过聚苯乙烯/氯硅烷复合材料和HMDS处理后的PVP表面生长的并五苯晶粒尺寸则分别在200~400 nm和400~600 nm。大尺寸的晶粒能够减小器件沟道内的陷阱浓度

从而有效地提高电学性能。PVP绝缘层采用聚苯乙烯/氯硅烷和HMDS修饰后

与未修饰的器件相比迁移率分别提高了58倍和82倍。采用HMDS作为表面修饰层制备柔性OTFT

并五苯场效应晶体管的关态电流约为10

-9

电流的开关比超过10

最大场效应迁移率约可达0.338 cm

-1

Abstract

High-performance pentacene organic thin film transistor (OTFT) on the Poly(4-vinylphenol) (PVP) dielectric layers with different modification layers using hexamethyldisilazane (HMDS) and polystyrene/chlorosilane composite has been developed. The effect of the different modification layers on the growth mode of pentacene films and the performance of the OTFT were investigated. The AFM images showed that the morphology of pentacene semiconductor films were affected by the interface modification. The pentacene grains grown on the HMDS modified PVP substrates were in the range of 400~600 nm which were larger than those grown on the polystyrene/chlorosilane and bare PVP substrates with dimension in the range of 200~400 nm and 150 nm

respectively. Large particle size can reduce charge trapping and improve the electrical performance. The field-effect mobility of the polystyrene/chlorosilane modified PVP and the HMDS modified PVP was 58 times and 82 times higher than the bare PVP layers. The flexible device with HMDS modification had a maximum field-effect mobility of up to 0.338 cm

-1

. The transfer curve showed an on/off current ratio exceeding 10

with the off-current of about 10

-9

关键词

Keywords

references

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