三明治结构电子阻挡层中势阱深度对LED性能的影响

章敏杰; 梅霆; 王乃印; 朱凝; 王达飞; 李浩; 文洁

doi:10.3788/fgxb20133410.1367

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三明治结构电子阻挡层中势阱深度对LED性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 三明治结构电子阻挡层中势阱深度对LED性能的影响
- Effect of Well Depth of Sandwich Electron-blocking Layer on The Performance of Blue Light-emitting Diodes
- 发光学报 2013年34卷第10期页码：1367-1372
- 作者机构：
  
  1. 华南师范大学光电子材料与技术研究所微纳功能材料与器件重点实验室,广东广州,510631
  2. 中山大学光电子材料与技术国家重点实验室,广东广州,510275
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61176085)();广东省科技厅项目(2012Y-00001)();广东省教育厅项目(gjhz1103)();广州市科技局项目(2010U1-D0
- DOI：10.3788/fgxb20133410.1367
  中图分类号： TN312.8
- 收稿日期：2013-05-20，
  
  修回日期：2013-07-25，
  
  纸质出版日期：2013-10-10
- 稿件说明：
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章敏杰, 梅霆, 王乃印, 朱凝, 王达飞, 李浩, 文洁. 三明治结构电子阻挡层中势阱深度对LED性能的影响[J]. 发光学报, 2013,34(10): 1367-1372

ZHANG Min-jie, MEI Ting, WANG Nai-yin, ZHU Ning, WANG Da-fei, LI Hao, WEN Jie. Effect of Well Depth of Sandwich Electron-blocking Layer on The Performance of Blue Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2013,34(10): 1367-1372
章敏杰, 梅霆, 王乃印, 朱凝, 王达飞, 李浩, 文洁. 三明治结构电子阻挡层中势阱深度对LED性能的影响[J]. 发光学报, 2013,34(10): 1367-1372 DOI： 10.3788/fgxb20133410.1367.

ZHANG Min-jie, MEI Ting, WANG Nai-yin, ZHU Ning, WANG Da-fei, LI Hao, WEN Jie. Effect of Well Depth of Sandwich Electron-blocking Layer on The Performance of Blue Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2013,34(10): 1367-1372 DOI： 10.3788/fgxb20133410.1367.

摘要

在LED中引入了Al

0.1

0.9

N-Al

0.1

0.9

N多层电子阻挡层

并讨论结构中插入的势阱深度(即中间层Al

N的Al组分"

")的变化对LED性能带来的影响。研究发现

具有三明治结构电子阻挡层(EBL)的LED比传统LED具有更好的发光特性

并且其性能与电子阻挡层中的势阱深度密切相关。究其原因

一是由于电子阻挡层内部不同程度的晶格失配而引入的极化电场引起了电子阻挡层的有效势垒高度的不同;二是在于电子阻挡层中的势阱所产生的空穴聚集效应也会随着势阱深度的变化而变化。故而使得空穴注入效率和电子阻挡层对电子的限制作用在不同势阱深度的LED样品中有所不同。

Abstract

Blue light-emitting diodes (LEDs) with the Al

0.1

0.9

N-Al

0.1

0.9

N sandwich electron blocking layers (EBLs) are investigated numerically. The simulation results show that the LEDs with the sandwich EBLs exhibit better performance

which is closely related to the depth of the inserted well (denoted as

of Al

N). The performance differences are attributed to the different levels of the electron confinement and hole injection efficiency

which is due to the different degree of the energy band modulation and hole gathering effect in the sandwich EBLs.

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Keywords

references

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