量子阱数变化对InGaN/GaN发光二极管瞬态响应的影响

陈贵楚; 范广涵

doi:10.3788/fgxb20133410.1346

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量子阱数变化对InGaN/GaN发光二极管瞬态响应的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 量子阱数变化对InGaN/GaN发光二极管瞬态响应的影响
- Transient Analysis of InGaN/GaN Light-emitting Diode with Varied Quantum Well Number
- 发光学报 2013年34卷第10期页码：1346-1350
- 作者机构：
  
  1. 肇庆学院物理系, 广东肇庆 526061
  2. 华南师范大学光电子材料与技术研究所, 广东广州 510631
- 作者简介：
- 基金信息：
  
  国家自然科学基金面上项目(61176043)资助()
- DOI：10.3788/fgxb20133410.1346
  中图分类号： TN312.8
- 收稿日期：2013-05-21，
  
  修回日期：2013-07-18，
  
  纸质出版日期：2013-10-10
- 稿件说明：
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陈贵楚, 范广涵. 量子阱数变化对InGaN/GaN发光二极管瞬态响应的影响[J]. 发光学报, 2013,34(10): 1346-1350

CHEN Gui-chu, FAN Guang-han. Transient Analysis of InGaN/GaN Light-emitting Diode with Varied Quantum Well Number[J]. Chinese Journal of Luminescence, 2013,34(10): 1346-1350
陈贵楚, 范广涵. 量子阱数变化对InGaN/GaN发光二极管瞬态响应的影响[J]. 发光学报, 2013,34(10): 1346-1350 DOI： 10.3788/fgxb20133410.1346.

CHEN Gui-chu, FAN Guang-han. Transient Analysis of InGaN/GaN Light-emitting Diode with Varied Quantum Well Number[J]. Chinese Journal of Luminescence, 2013,34(10): 1346-1350 DOI： 10.3788/fgxb20133410.1346.

摘要

理论上研究了当 InGaN 发光二极管(LED)有源区的量子阱数变化时

LED的大信号瞬态响应特性与这种变化的关系。结果来自于LED等效电路模型的SPICE模拟

模型参数的确定通过拟合已测量的LED的实验数据及模拟结果来实现。结果表明

LED光脉冲的上升时间随量子阱数的增加而增加

由3个量子阱构成的有源区是LED的优化结构。

Abstract

A rate equation model for static and dynamic behavior of InGaN/GaN light-emitting diode (LED) has been developed

and the model has been implemented on a SPICE circuit emulator. The model's parameters have been achieved by fitting simulated results with reported experimental data. The transient response of InGaN LEDs has been comparatively investigated by varying the number of quantum wells in their active region. The simulations show that the rise time of optical outpower increases with the number of wells

and the active region composed of three quantum wells is the optimized structure.

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Keywords

references

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