基于a-IGZO TFT的AMOLED像素电路稳定性的仿真研究

贾田颖; 詹润泽; 董承远

doi:10.3788/fgxb20133409.1240

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基于a-IGZO TFT的AMOLED像素电路稳定性的仿真研究

发光学应用及交叉前沿 | 更新时间：2020-08-12

- 基于a-IGZO TFT的AMOLED像素电路稳定性的仿真研究
- Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits
- 发光学报 2013年34卷第9期页码：1240-1244
- 作者机构：
  
  上海交通大学电子信息与电气工程学院电子工程系上海,200240
- 作者简介：
- 基金信息：
  
  国家自然科学基金重点项目(61136004)资助()
- DOI：10.3788/fgxb20133409.1240
  中图分类号： TN321+.5
- 收稿日期：2013-06-12，
  
  修回日期：2013-06-30，
  
  纸质出版日期：2013-09-10
- 稿件说明：
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贾田颖, 詹润泽, 董承远. 基于a-IGZO TFT的AMOLED像素电路稳定性的仿真研究[J]. 发光学报, 2013,34(9): 1240-1244

JIA Tian-ying, ZHAN Run-ze, DONG Cheng-yuan. Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits[J]. Chinese Journal of Luminescence, 2013,34(9): 1240-1244
贾田颖, 詹润泽, 董承远. 基于a-IGZO TFT的AMOLED像素电路稳定性的仿真研究[J]. 发光学报, 2013,34(9): 1240-1244 DOI： 10.3788/fgxb20133409.1240.

JIA Tian-ying, ZHAN Run-ze, DONG Cheng-yuan. Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits[J]. Chinese Journal of Luminescence, 2013,34(9): 1240-1244 DOI： 10.3788/fgxb20133409.1240.

摘要

非晶铟镓锌氧化物薄膜晶体管(a-IGZO TFT)有望在有源矩阵有机发光显示(AMOLED)像素电路中得到实际应用

但其电压偏置效应仍会引起电路特性的不稳定。本文利用实验室制备的a-IGZO TFT器件进行参数提取并建立了SPICE仿真模型

通过拟合得到了它的阈值电压随时间变化的方程。在此基础上

采用SPICE软件对基于a-IGZO TFT的2T1C和3T1C两种AMOLED 像素电路的稳定性进行了比较研究

证明3T1C电路对阈值电压偏移确实存在一定的补偿效果。最后讨论了进一步改善AMOLED像素电路稳定特性的方法和实际效果。

Abstract

Amorphous In-Ga-Zn-O thin film transistors (a-IGZO TFTs) have potentials to be used in pixel circuits of active matrix organic light emitting display (AMOLED). However

bias stress effect still involves a-IGZO TFTs

evidently influencing performance of the corresponding AMOLED pixel circuits. In this study

inverted-staggered a-IGZO TFT devices were fabricated and measured

following which the corresponding Spice model was created. In addition

the dependence of stress time on threshold voltage (

) shift was theoretically modeled. By using SPICE simulation tool

we studied the stability properties of a-IGZO TFT-OLED pixel circuits in the forms of 2T1C and 3T1C

which proves there exists somewhat compensation effect on the

shift in 3T1C pixel circuit. Finally

we discussed and analyzed the way to further improve stability of a-IGZO TFT-OLED pixel circuits.

关键词

Keywords

references

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