AlGaInP DH-LED的pn结特性

高丹; 梁静秋; 梁中翥; 田超; 秦余欣; 王维彪

doi:10.3788/fgxb20133409.1213

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AlGaInP DH-LED的pn结特性

器件制备及器件物理 | 更新时间：2020-08-12

- AlGaInP DH-LED的pn结特性
- pn Junction Characteristic of AlGaInP DH-LED
- 发光学报 2013年34卷第9期页码：1213-1218
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室, 吉林长春 130033
  2. 中国科学院大学, 北京 100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金(20120323,61007023)();吉林省科技发展计划(20100351)();吉林省科技厅项目(61274122)资助()
- DOI：10.3788/fgxb20133409.1213
  中图分类号： TN312.8
- 收稿日期：2013-06-27，
  
  修回日期：2013-07-23，
  
  纸质出版日期：2013-09-10
- 稿件说明：
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高丹, 梁静秋, 梁中翥, 田超, 秦余欣, 王维彪. AlGaInP DH-LED的pn结特性[J]. 发光学报, 2013,34(9): 1213-1218

GAO Dan, LIANG Jing-qiu, LIANG Zhong-zhu, TIAN Chao, QIN Yu-xin, WANG Wei-biao. pn Junction Characteristic of AlGaInP DH-LED[J]. Chinese Journal of Luminescence, 2013,34(9): 1213-1218
高丹, 梁静秋, 梁中翥, 田超, 秦余欣, 王维彪. AlGaInP DH-LED的pn结特性[J]. 发光学报, 2013,34(9): 1213-1218 DOI： 10.3788/fgxb20133409.1213.

GAO Dan, LIANG Jing-qiu, LIANG Zhong-zhu, TIAN Chao, QIN Yu-xin, WANG Wei-biao. pn Junction Characteristic of AlGaInP DH-LED[J]. Chinese Journal of Luminescence, 2013,34(9): 1213-1218 DOI： 10.3788/fgxb20133409.1213.

摘要

针对AlGaInP DH-LED的pn结特性进行了理论分析

得出电流密度

与电压

的关系。通过Matlab进行模拟分析

结果表明:当温度(300 K)一定时

在电压较小的情况下

电流密度成直线形式增大;当电压增大到一定值时

电流密度成对数形式增大;当电压过大时

电流密度几乎不增大。随着电压的升高

器件产生焦耳热增多

影响器件的工作特性

最终缩短LED的寿命。综合考虑

最后得出理论上的最佳发光驱动电压范围为2~2.33 V。

Abstract

The pn junction characteristics of AlGaInP DH-LED was analyzed by using Matlab simulation. The relationship of current density

and voltage

at certain temperature (300 K) was obtained. Under low voltage

the current density increases linearly with the voltage. When the voltage increases to a certain value

the current density increases in logarithmic pattern. When the voltage is too high

the current density does not increase with the voltage. With the increase of voltage

the Joule heat of the device

and affect the device characteristics

and finally shorten the LED life. Comprehensive consideration

the theory of optimal driving voltage range finally load at 2~2.33 V. The research results provide theoretical reference and guidance for the design of LED array integrated device.

关键词

Keywords

references

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