结温对GaN基白光LED光学特性的影响

钟文姣; 魏爱香; 招瑜

doi:10.3788/fgxb20133409.1203

您当前的位置：

首页 >

文章列表页 >

结温对GaN基白光LED光学特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 结温对GaN基白光LED光学特性的影响
- Dependence of GaN-based White LED Colorimetric Parameters on Junction Temperature
- 发光学报 2013年34卷第9期页码：1203-1207
- 作者机构：
  
  广东工业大学材料与能源学院,广东广州,510006
- 作者简介：
- 基金信息：
  
  广东省高校优秀青年创新人才培养项目(2012LYM-0058)资助()
- DOI：10.3788/fgxb20133409.1203
  中图分类号： TN312.8
- 收稿日期：2013-05-14，
  
  修回日期：2013-07-08，
  
  纸质出版日期：2013-09-10
- 稿件说明：
移动端阅览
钟文姣, 魏爱香, 招瑜. 结温对GaN基白光LED光学特性的影响[J]. 发光学报, 2013,34(9): 1203-1207

ZHONG Wen-jiao, WEI Ai-xiang, ZHAO Yu. Dependence of GaN-based White LED Colorimetric Parameters on Junction Temperature[J]. Chinese Journal of Luminescence, 2013,34(9): 1203-1207
钟文姣, 魏爱香, 招瑜. 结温对GaN基白光LED光学特性的影响[J]. 发光学报, 2013,34(9): 1203-1207 DOI： 10.3788/fgxb20133409.1203.

ZHONG Wen-jiao, WEI Ai-xiang, ZHAO Yu. Dependence of GaN-based White LED Colorimetric Parameters on Junction Temperature[J]. Chinese Journal of Luminescence, 2013,34(9): 1203-1207 DOI： 10.3788/fgxb20133409.1203.

摘要

制备了一个可测量n型GaN材料电阻的白光LED样品

测量了从室温到170 ℃下的LED芯片的n-GaN材料的电阻

发现n-GaN材料的电阻随温度的升高而增大

且两者呈一定的指数关系。利用这一特性

通过测量LED工作状态下内部所用GaN材料的电阻

可以实现对LED结温的测量。通过改变积分球底板温度使LED样品处于不同的结温下

测量了白光LED的光谱及色度学参数

结果表明:白光LED的峰值波长、显色指数、色温、光通量均与结温成一定的线性关系。

Abstract

A white LED sample was fabricated which can be used to characterize the resistance of n-GaN at the range of 20 to 170 ℃. The results reveal an exponential relation between resistance and temperature. This relation is utilized to detect junction temperature of LED chip by measuring the resistance of n-GaN in a working LED. The white LED working in different junction temperature was achieved by changing the temperature of its heat sink. Their colorimetric parameters are measured simultaneously. These results show that the peak wavelength

rendering index

color temperature and luminous flux of white LED have a linear relationship with junction temperature.

关键词

Keywords

references

Steranka F M, Bhat J, Collins D, et al. High power LEDsTechnology status and market applications [J]. Phys. Status Solidi (a), 2002, 194(2):380-388.[2] Zhang J P, Liu Y, Cheng G L, et al. Constant stress accelerated life test of white OLED based on MAM [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2012, 27(1):61-65 (in Chinese).[3] Klassen D B M. A unified moblity model for device simulaton I. Model equations and concentration dependence [J]. Solit-State Electronics, 1992, 35:953-959.[4] Hong E, Narendran N. A method for projecting useful life of LED lighting systems [J]. SPIE, 5187:93-99.[5] Gu Y, Narendran N. A non-contact method for determining junction temperature of phosphor-convertedwhite LEDs [J]. SPIE, 5187:107-114.[6] Chen T, Chen Z Z, Lin L, et al. Methods for determining junction temperature of GaN-based white LEDs [J]. Chin. J. Lumin.(发光学报), 2006, 27(3):408-411 (in Chinese).[7] Vaitonis Z, Vitta P, Zukauskas A. Measurement of the junction temperature in high-power light-emitting diodes from the high-energy wing of the electroluminescence band [J]. Appl. Phys., 2008, 103(1):93-110.[8] Mnatsakanov T T, Levinshtein M E, Pomortseva L I, et al. Carrier mobility model for GaN [J]. Solid State Electron., 2003, 47(1):111-115.[9] Senawiratne J, Chatterjee A, Detchprohm T. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes [J]. Thin Solid Films, 2010, 518(6):1732-1736.[10] Ding T P, Guo W L, Cui B F, et al. The effect of temperature on the PL spectra of high power LED [J]. Spectrosc. Spect. Anal., 2011, 31(6):1450-1453.

浏览量

145

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

深紫外LED散热性能的改善研究

圆盘尺寸对InP发光二极管的光谱调控

基于PtOEP分子温度探针对OLED结温的判定及实验研究

体布拉格光栅外腔红光半导体激光器实验研究

嵌埋陶瓷散热基板对白光LED性能的影响