碳硅共掺杂p型AlN的光电性能研究

武红磊; 郑瑞生; 李萌萌; 闫征; 郑伟

doi:10.3788/fgxb20133409.1199

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碳硅共掺杂p型AlN的光电性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- 碳硅共掺杂p型AlN的光电性能研究
- Photoelectrical Performance of p-type AlN Crystal Codoped by Si and C
- 发光学报 2013年34卷第9期页码：1199-1202
- 作者机构：
  
  深圳大学光电工程学院光电子器件与系统(教育部/广东省)重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
  
  国家自然科学基金重点项目(61136001)();国家"();973"();前期研究专项(2010CB635115)资助项目()
- DOI：10.3788/fgxb20133409.1199
  中图分类号： O433;O474
- 收稿日期：2013-05-09，
  
  修回日期：2013-05-31，
  
  纸质出版日期：2013-09-10
- 稿件说明：
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武红磊, 郑瑞生, 李萌萌, 闫征, 郑伟. 碳硅共掺杂p型AlN的光电性能研究[J]. 发光学报, 2013,34(9): 1199-1202

WU Hong-lei, ZHENG Rui-sheng, LI Meng-meng, YAN Zheng, ZHENG Wei. Photoelectrical Performance of p-type AlN Crystal Codoped by Si and C[J]. Chinese Journal of Luminescence, 2013,34(9): 1199-1202
武红磊, 郑瑞生, 李萌萌, 闫征, 郑伟. 碳硅共掺杂p型AlN的光电性能研究[J]. 发光学报, 2013,34(9): 1199-1202 DOI： 10.3788/fgxb20133409.1199.

WU Hong-lei, ZHENG Rui-sheng, LI Meng-meng, YAN Zheng, ZHENG Wei. Photoelectrical Performance of p-type AlN Crystal Codoped by Si and C[J]. Chinese Journal of Luminescence, 2013,34(9): 1199-1202 DOI： 10.3788/fgxb20133409.1199.

摘要

在SiC衬底上生长了碳硅共掺杂p型AlN晶体

通过X射线衍射、X射线光电子能谱(XPS)、光致发光(PL)光谱、霍尔测试对碳硅共掺杂p型AlN晶体的结构、光学及电学性能进行了综合研究。通过XPS测试分析(尤其是对样品中Si 2p和C 1s的XPS谱分析)发现

样品中C替代N成为受主

而Si替代Al成为施主。样品的PL谱主要包括两个特征发射峰

分别来自于C、Si在AlN中形成的复合物V

-C

和C

-Si

。

Abstract

p-type AlN crystals by C and Si codoping were grown on SiC substrates by the sublimation method. The structural

optical and electronic properties of the samples were investigated by XRD

XPS

PL and Hall-effect measurement. The XPS analysis

especially about binding energies of Si 2p and C 1s peaks

reveals that in AlN crystals

C replaces N as an accepter and Si replaces Al as a donor. In PL spectroscopy

two main emission peaks are observed. Combined the structure and composition of AlN and related theoretical results

the two peaks are attributed to the complexes of V

-C

and C

-Si

respectively.

关键词

Keywords

references

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