导带弯曲对有限深GaN/Ga1-xAlxN球形量子点中束缚极化子的影响及其压力效应

曹艳娟; 闫祖威; 石磊

doi:10.3788/fgxb20133409.1128

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导带弯曲对有限深GaN/Ga_1-xAl_xN球形量子点中束缚极化子的影响及其压力效应

材料合成及性能 | 更新时间：2020-08-12

- 导带弯曲对有限深GaN/Ga_1-xAl_xN球形量子点中束缚极化子的影响及其压力效应
- Effect of Band Bending on The Bound Polaron in A GaN/Ga_1-xAl_xN Spherical Finite-potential Quantum Dot Under Pressure
- 发光学报 2013年34卷第9期页码：1128-1134
- 作者机构：
  
  1. 内蒙古大学物理科学与技术学院,内蒙古呼和浩特,010021
  2. 内蒙古农业大学理学院, 内蒙古呼和浩特 010018
- 作者简介：
- 基金信息：
  
  国家自然科学基金(11364028,10964006)();内蒙古自治区自然科学基金重大项目(2013ZD02)();内蒙古农业大学科技创新团队(NDPYTD2010-
- DOI：10.3788/fgxb20133409.1128
  中图分类号： O471.3
- 收稿日期：2013-04-25，
  
  修回日期：2013-07-03，
  
  纸质出版日期：2013-09-10
- 稿件说明：
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曹艳娟, 闫祖威, 石磊. 导带弯曲对有限深GaN/Ga1-xAlxN球形量子点中束缚极化子的影响及其压力效应[J]. 发光学报, 2013,34(9): 1128-1134

CAO Yan-juan, YAN Zu-wei, SHI Lei. Effect of Band Bending on The Bound Polaron in A GaN/Ga1-xAlxN Spherical Finite-potential Quantum Dot Under Pressure[J]. Chinese Journal of Luminescence, 2013,34(9): 1128-1134
曹艳娟, 闫祖威, 石磊. 导带弯曲对有限深GaN/Ga1-xAlxN球形量子点中束缚极化子的影响及其压力效应[J]. 发光学报, 2013,34(9): 1128-1134 DOI： 10.3788/fgxb20133409.1128.

CAO Yan-juan, YAN Zu-wei, SHI Lei. Effect of Band Bending on The Bound Polaron in A GaN/Ga1-xAlxN Spherical Finite-potential Quantum Dot Under Pressure[J]. Chinese Journal of Luminescence, 2013,34(9): 1128-1134 DOI： 10.3788/fgxb20133409.1128.

摘要

采用三角势近似界面导带弯曲

研究了有限高势垒GaN/Ga

-x

N球形量子点中束缚极化子的结合能及其压力效应。数值计算了杂质态与声子之间相互作用对结合能的影响

同时与方形势垒进行了比较。结果表明

随着电子面密度的增加

导带弯曲效应增强

束缚极化子结合能逐渐下降。当电子面密度

=(6.0

8.0)10

/cm

且量子点半径

10 nm时

束缚极化子的结合能趋近于一个相同且较小的值。结合能的极化效应主要来自杂质与光学声子相互作用的贡献。

Abstract

The bound polaron in a GaN/Ga

N spherical finite-potential quantum dot under hydrostatic pressure is investigated by using a triangular potential to approximate the band bending of the interface potential. We performed numerical calculation on the binding energy of the electron-phonon and ion-phonon interactions. The binding energy of a bound polaron is compared with the case of square potential. The results show that the binding energy of bound polaron decreases with the increasing of electron areal density. We observed that the binding energy closes to the different values of electron areal density

=(6.0

8.0)10

/cm

when the dot radius

10 nm. The ion-phonon interactions play a major role in the polaronic effect.

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references

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