基于间接跃迁模型的p+-GaAsSb费米能级研究

高汉超; 尹志军; 程伟; 王元; 许晓军; 李忠辉

doi:10.3788/fgxb20133408.1057

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基于间接跃迁模型的p⁺-GaAsSb费米能级研究

器件制备及器件物理 | 更新时间：2020-08-12

- 基于间接跃迁模型的p⁺-GaAsSb费米能级研究
- Study of Fermi Level of p⁺-doped GaAsSb by Indirect Transition Model
- 发光学报 2013年34卷第8期页码：1057-1060
- 作者机构：
  
  南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京,210016
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133408.1057
  中图分类号： O782+.8
- 收稿日期：2013-04-15，
  
  修回日期：2013-06-24，
  
  纸质出版日期：2013-08-10
- 稿件说明：
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高汉超, 尹志军, 程伟, 王元, 许晓军, 李忠辉. 基于间接跃迁模型的p+-GaAsSb费米能级研究[J]. 发光学报, 2013,34(8): 1057-1060

GAO Han-chao, YIN Zhi-jun, CHENG Wei, WANG Yuan, XU Xiao-jun, LI Zhong-hui. Study of Fermi Level of p+-doped GaAsSb by Indirect Transition Model[J]. Chinese Journal of Luminescence, 2013,34(8): 1057-1060
高汉超, 尹志军, 程伟, 王元, 许晓军, 李忠辉. 基于间接跃迁模型的p+-GaAsSb费米能级研究[J]. 发光学报, 2013,34(8): 1057-1060 DOI： 10.3788/fgxb20133408.1057.

GAO Han-chao, YIN Zhi-jun, CHENG Wei, WANG Yuan, XU Xiao-jun, LI Zhong-hui. Study of Fermi Level of p+-doped GaAsSb by Indirect Transition Model[J]. Chinese Journal of Luminescence, 2013,34(8): 1057-1060 DOI： 10.3788/fgxb20133408.1057.

摘要

重p型掺杂GaAsSb广泛应用于InP HBT基区材料

重掺杂影响GaAsSb材料的带隙和费米能级等重要参数

这些参数对设计高性能HBT起着关键作用。本文通过间接跃迁模型研究了p

-GaAsSb材料的荧光性质

以及费米能级与Sb组分的关系。由于费米能级与空穴有效质量

和空穴态密度

存在函数关系

我们通过荧光测量并计算了空穴有效质量

和空穴态密度

研究结果表明

和

共同主导了费米能级的变化。

Abstract

Heavily p

-doped GaAsSb is extensively applied in InP HBT base material

it influences many important parameters

such as band gap and Fermi level. These parameters are key factors for the design of high performance HBT devices. This work studied photoluminescence of p

- GaAsSb in the model of indirect transition

especially the relationship between GaAsSb Fermi level and Sb composition. The hole effective mass (

) and hole density (

) were measured and calculated because Fermi level

and

had functional relationship. It is found that

and

result in the change of Fermi level.

关键词

Keywords

references

Maneux C, Grandchampl B, Labat N, et al. LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs [C]//Proceedings of The 1st European Microwave Integrated Circuits Conference, Manchester： Microwave Journal, 2006：468-471.[2] Low T S, Dvorak M W, Farhoud M, et al. GaAsSb DHBT IC technology for RF and microwave instrumentation [C]//Compound Semiconductor Integrated Circuit Symposium, California： Palm Springs, 2005：69-72.[3] Zeng Y P, Ostinelli O, Lovblom R, et al. 400-GHz InP/GaAsSb DHBTs With low-noise microwave performance [J]. Electron Device Lett., 2010, 31(10)：1122-1124.[4] Snodgrass W, Wu B R, Hafez W, et al. Graded base type-Ⅱ InP/GaAsSb DHBT with fT=475 GHz [J]. Electron Device Lett., 2006, 27(2)：84-86.[5] Tian Y, Wang H. Analysis of DC characteristics of GaAs double heterojuction bipolar transistor [J]. Microelectronics Journal, 2006, 37(1)：38-43.[6] Miller R C, Kleinman D A, Nordland W A, et al. Electron spin relaxation and photoluminescence of Zn-doped GaAs [J]. Phys. Rev. B, 1981, 23(9)：4399-4406.[7] Olego D, Cardona M. Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependence [J]. Phys. Rev. B, 1980, 22(2)：886-893.[8] Chen H D, Feng M S, Chen P A, et al. Low-temperature luminescent properties of degenerate p-type GaAs grown by low-pressure metalorganic chemical vapor deposition [J]. J. Appl. Phys., 1994, 75(4)：2210-2214.

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