电流拥挤效应与LED器件可靠性分析

吴艳艳; 冯士维; 乔彦斌; 魏光华; 张建伟

doi:10.3788/fgxb20133408.1051

您当前的位置：

首页 >

文章列表页 >

电流拥挤效应与LED器件可靠性分析

器件制备及器件物理 | 更新时间：2020-08-12

- 电流拥挤效应与LED器件可靠性分析
- Study of Current Crowding Effect and Reliability of LED Devices
- 发光学报 2013年34卷第8期页码：1051-1056
- 作者机构：
  
  北京工业大学电子信息与控制工程学院可靠性实验室北京,100124
- 作者简介：
- 基金信息：
  
  广东省战略性新兴产业专项资金LED产业项目(2012A080304003)();北京市自然科学基金(4130022)资助项目()
- DOI：10.3788/fgxb20133408.1051
  中图分类号： TN383+.1
- 收稿日期：2013-03-01，
  
  修回日期：2013-05-02，
  
  纸质出版日期：2013-08-10
- 稿件说明：
移动端阅览
吴艳艳, 冯士维, 乔彦斌, 魏光华, 张建伟. 电流拥挤效应与LED器件可靠性分析[J]. 发光学报, 2013,34(8): 1051-1056

WU Yan-yan, FENG Shi-wei, QIAO Yan-bin, WEI Guang-hua, ZHANG Jian-wei. Study of Current Crowding Effect and Reliability of LED Devices[J]. Chinese Journal of Luminescence, 2013,34(8): 1051-1056
吴艳艳, 冯士维, 乔彦斌, 魏光华, 张建伟. 电流拥挤效应与LED器件可靠性分析[J]. 发光学报, 2013,34(8): 1051-1056 DOI： 10.3788/fgxb20133408.1051.

WU Yan-yan, FENG Shi-wei, QIAO Yan-bin, WEI Guang-hua, ZHANG Jian-wei. Study of Current Crowding Effect and Reliability of LED Devices[J]. Chinese Journal of Luminescence, 2013,34(8): 1051-1056 DOI： 10.3788/fgxb20133408.1051.

摘要

对小功率GaN基白光LED的电流拥挤效应进行了研究

发现串联灯组(8只为一组)在经过22 V电压冲击后出现漏电失效现象。通过Pspice软件对串联LED灯组进行模拟

发现与其他样品相比

受损样品承受了更大的电压和功率;对器件加-2 V偏压

利用光发射(EMMI)显微镜对芯片表面不同量级漏电流进行定位分析比较

结果表明漏电流集中在p型扩展电极端点附近。分析认为

电压冲击的破坏路径穿过了LED的量子阱结构

而电流的不均匀分布造成了 p型扩展电极附近的电流拥挤

加剧了pn结的损伤程度

提高电流扩展的均匀性可以有效提高LED的可靠性。最后还对在正向电流-电压区域出现微分负阻特性的器件进行了失效分析。

Abstract

The current crowding effect of low-power GaN base LEDs was investigated. It is found that LED module (eight LEDs in series as a set of group) suffered voltage surge sometimes presented current leakage failure. Pspice was applied to simulate LED module. It showed the damaged samples bore more voltage and power compared with the normal results. The orientation of leakage current of LED chip was studied

via

Emission Microscope (EMMI)

the result indicated the leakage current intensively spreaded on the end of the p-type extended electrode. We assumed that the damaged route of voltage surged through the quantum well of LED

and the un-distribution current led to the effect of current crowding near the p-type extended electrode

which aggravated the injury severity of pn junction. Well-distributed current could improve the reliability of LED. Finally

the failure analysis of LED with differential negative resistance effect in the current-voltage characteristics was given.

关键词

Keywords

references

Ruan H R, Xia G Y. Brightness correction method of LED display based on photographing [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2012, 27(2)：193-197 (in Chinese).[2] Zhao Y H, Fan C J. Design of combined reflectors used in LED street lamps [J]. Chin. Opt.(中国光学), 2012, 5(5)：520-524 (in Chinese).[3] Wu G Q, Guo W L, Zhu Y X, et al. Effects of human body mode electrostatic on carrier movement and the reliability of GaN-based blue light-emitting diode [J]. Chin. J. Lumin.(发光学报), 2012, 33(10)：1133-1137 (in Chinese).[4] Pan H P, Huang L W, Li R, et al. Finite element model of GaN based LED and the optimization of the mesa structure [J]. Chin. J. Lumin.(发光学报), 2007, 28(1)：114-119 (in Chinese).[5] Kim H, Park S J, Hwang H. Modeling of a GaN-based light-emitting diode for uniform current spreading [J]. Appl. Phys. Lett., 2002, 77(12)：1903-1904.[6] Hu J Z, Yang L Q, Kim L, et al. Aging mechanism of high-power InGaN/GaN light-emitting diodes under electrical stresses [J]. Semicond. Sci. Technol., 2007, 22：1249-1252.[7] Yu L S. Semiconductor Heterojunction Physics [M]. Beijing： Science Press, 2006：78-84 (in Chinese).[8] Kim H, Park S J, Hwang H. Effects of current spreading on the performance of GaN-based light-emitting diodes [J]. IEEE Trans. Electron. Dev., 2001, 48(6)：1065-1069.[9] Xue Z Q, Huang S R, Zhang B P, et al. Analysis of failure mechanism of GaN-based white light-emitting diode [J]. Acta Phys. Sinica (物理学报), 2010, 7(7)：5002-5008 (in Chinese).[10] Gao G B, Li X X. Reliability Physics of Semiconductor Device [M]. Beijing： Science Press, 1987：458-465 (in Chinese).[11] Ai W W, Guo X, Liu B, et al. Effect of current crowding on the reliability of GaN-based LEDs [J]. Laser&Infrared (激光与红外), 2006, 36(6)：491-494 (in Chinese).[12] Sheu G J, Hwu F S, Chen J C, et al. Effect of the electrode pattern on current spreading and driving voltage in a GaN/sapphire LED chip [J]. J. Electrochem. Soc., 2008, 155(10)：H836-H839.[13] Yan J, Zhong C T, Yu T J, et al. Optical characterics of InGaN/GaN light emitting diodes on patterned sapphire substrate [J]. Spectrosc. Spect. Anal.(光谱学与光谱分析), 2012, 32(1)：7-10 (in Chinese).[14] Lee S W, Oh D C, Goto H, et al. Origin of forward leakage current in GaN-based light-emitting devices [J]. Appl. Phys. Lett., 2006, 89(13)：132117-1-3.

浏览量

492

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于BP神经网络的LED可靠性模型研究

氮和硼元素共掺杂对碳点荧光的调控机制

高气密性的深紫外LED半无机封装技术

晶相对碳点多色发光的调制及其在白光发光二极管器件中的应用

邻苯二甲酸结晶诱导荧光碳点制备及其在白光发光二极管中的应用