沟道宽度对ZnO-TFT电学性能的影响

苏晶; 莫昌文; 刘玉荣

doi:10.3788/fgxb20133408.1046

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沟道宽度对ZnO-TFT电学性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 沟道宽度对ZnO-TFT电学性能的影响
- Effects of Channel Width on The Electrical Properties of ZnO-based Thin Film Transistor
- 发光学报 2013年34卷第8期页码：1046-1050
- 作者机构：
  
  华南理工大学电子与信息学院,广东广州,510640
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61076113)资助项目()
- DOI：10.3788/fgxb20133408.1046
  中图分类号： O472+.4;TN321+.5
- 收稿日期：2013-06-10，
  
  修回日期：2013-06-24，
  
  纸质出版日期：2013-08-10
- 稿件说明：
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苏晶, 莫昌文, 刘玉荣. 沟道宽度对ZnO-TFT电学性能的影响[J]. 发光学报, 2013,34(8): 1046-1050

SU Jing, MO Chang-wen, LIU Yu-rong. Effects of Channel Width on The Electrical Properties of ZnO-based Thin Film Transistor[J]. Chinese Journal of Luminescence, 2013,34(8): 1046-1050
苏晶, 莫昌文, 刘玉荣. 沟道宽度对ZnO-TFT电学性能的影响[J]. 发光学报, 2013,34(8): 1046-1050 DOI： 10.3788/fgxb20133408.1046.

SU Jing, MO Chang-wen, LIU Yu-rong. Effects of Channel Width on The Electrical Properties of ZnO-based Thin Film Transistor[J]. Chinese Journal of Luminescence, 2013,34(8): 1046-1050 DOI： 10.3788/fgxb20133408.1046.

摘要

用射频磁控溅射法生长的ZnO薄膜作为有源层

制备出了ZnO基薄膜晶体管(ZnO-TFT)

并在空气环境下350℃退火1 h

研究了沟道宽度对ZnO-TFT器件性能的影响。实验结果表明:阈值电压随着沟道宽度的减小而增加

这是由于沟道越窄

载流子被捕获的几率越大

在相同栅压下沟道内可动载流子浓度越小

相应的阈值电压就越大;饱和迁移率随着沟道宽度的减小而增加

认为这是由源/漏电阻的侧壁效应及边缘电子场效应引起的附加电流所致。

Abstract

ZnO-based thin film transistors (ZnO-TFTs) with RF-sputtered ZnO active layer were fabricated at room temperature

and then annealed at 350℃ for 1 h in the air environment. Effects of channel width on the electrical properties of ZnO-TFTs were investigated. The threshold voltage increases with the decrease of the channel width

that is because the more narrower the channel width is

the more greater probability of carriers is captured

the less free carriers are under the same gate voltage

so that the more greater the threshold voltage is. The saturation carrier mobility also increases with the decrease of the channel width

due to the side wall effect associated with source/drain resistance as well as the fringing electronic-field effects which led to an additional current flow beyond the device edges.

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Keywords

references

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