SiN插入层对GaN外延膜应力和光学质量的影响

宋世巍; 梁红伟; 申人升; 柳阳; 张克雄; 夏晓川; 杜国同

doi:10.3788/fgxb20133408.1017

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SiN插入层对GaN外延膜应力和光学质量的影响

器件制备及器件物理 | 更新时间：2020-08-12

- SiN插入层对GaN外延膜应力和光学质量的影响
- Influence of In-situ SiN_x Interlayer on Strain Relief and Optical Character of GaN Epilayer Grown on 6H-SiC
- 发光学报 2013年34卷第8期页码：1017-1021
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 吉林大学电子科学与工程学院, 吉林长春 130012
  3. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室上海,200050
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60976010,61076045,11004020)();国家863项目(2011AA03A102)();中央高校项目(DUT12LK22,DUT1
- DOI：10.3788/fgxb20133408.1017
  中图分类号： TN304.2
- 收稿日期：2013-02-08，
  
  修回日期：2013-04-02，
  
  纸质出版日期：2013-08-10
- 稿件说明：
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宋世巍, 梁红伟, 申人升, 柳阳, 张克雄, 夏晓川, 杜国同. SiN插入层对GaN外延膜应力和光学质量的影响[J]. 发光学报, 2013,34(8): 1017-1021

SONG Shi-wei, LIANG Hong-wei, SHEN Ren-sheng, LIU Yang, ZHANG Ke-xiong, XIA Xiao-chuan, DU Guo-tong. Influence of In-situ SiNx Interlayer on Strain Relief and Optical Character of GaN Epilayer Grown on 6H-SiC[J]. Chinese Journal of Luminescence, 2013,34(8): 1017-1021
宋世巍, 梁红伟, 申人升, 柳阳, 张克雄, 夏晓川, 杜国同. SiN插入层对GaN外延膜应力和光学质量的影响[J]. 发光学报, 2013,34(8): 1017-1021 DOI： 10.3788/fgxb20133408.1017.

SONG Shi-wei, LIANG Hong-wei, SHEN Ren-sheng, LIU Yang, ZHANG Ke-xiong, XIA Xiao-chuan, DU Guo-tong. Influence of In-situ SiNx Interlayer on Strain Relief and Optical Character of GaN Epilayer Grown on 6H-SiC[J]. Chinese Journal of Luminescence, 2013,34(8): 1017-1021 DOI： 10.3788/fgxb20133408.1017.

摘要

研究了MOCVD系统中原位SiN插入层对GaN薄膜应力和光学性质的影响。采用SiN插入层后

GaN薄膜的裂纹数量大大减少

薄膜所承受的张应力得到了一定的释放。同时

GaN薄膜的缺陷密度降低一倍

晶体质量得到了极大的改善。研究表明

位错密度的降低在GaN薄膜中留存较大的残余应力

补偿了降温过程中所引入的张应力。同样

随着SiN插入层的应用

低温PL谱的半峰宽降低

薄膜光学质量提高。最后研究了PL谱发光峰与应力的关系

得到了一个-13.8的线性系数。

Abstract

High quality GaN epilayers have been grown on 6H-SiC substrate by metal organic chemical vapor deposition (MOCVD) using an

in situ

porous SiN

interlayer. It was found that the SiN

interlayer played a very important role in strain relief and the enhancement of quality of GaN epilayer. Optical microscope studies revealed that the crack line density was reduced to 0.29 mm

-1

. Furthermore

the in-plane stress of 1.5810

-3

was measured by Raman spectra

representing a significant strain relief. The relaxation was assisted by the reduction of dislocation density. Finally

a linear coefficient characterizing the relationship between the band gap and the biaxial stress of the GaN epilayer was obtained.

关键词

Keywords

references

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