具有电流阻挡层的不同GaN基LED的光电特性

郭伟玲; 俞鑫; 刘建朋; 樊星; 白俊雪

doi:10.3788/fgxb20133407.0918

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具有电流阻挡层的不同GaN基LED的光电特性

器件制备及器件物理 | 更新时间：2020-08-12

- 具有电流阻挡层的不同GaN基LED的光电特性
- Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer
- 发光学报 2013年34卷第7期页码：918-923
- 作者机构：
  
  北京工业大学光电子技术实验室北京,100124
- 作者简介：
- 基金信息：
  
  国家科技支撑计划 (2011BAE01B14)资助项目()
- DOI：10.3788/fgxb20133407.0918
  中图分类号： TN383.1
- 收稿日期：2013-02-20，
  
  修回日期：2013-04-21，
  
  纸质出版日期：2013-07-10
- 稿件说明：
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郭伟玲, 俞鑫, 刘建朋, 樊星, 白俊雪. 具有电流阻挡层的不同GaN基LED的光电特性[J]. 发光学报, 2013,34(7): 918-923

GUO Wei-ling, YU Xin, LIU Jian-peng, FAN Xing, Bai Jun-xue. Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(7): 918-923
郭伟玲, 俞鑫, 刘建朋, 樊星, 白俊雪. 具有电流阻挡层的不同GaN基LED的光电特性[J]. 发光学报, 2013,34(7): 918-923 DOI： 10.3788/fgxb20133407.0918.

GUO Wei-ling, YU Xin, LIU Jian-peng, FAN Xing, Bai Jun-xue. Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(7): 918-923 DOI： 10.3788/fgxb20133407.0918.

摘要

研究对比了InGaN/GaN多量子阱发光二极管中p电极下的不同SiO

电流阻挡层的光电特性。 6种样品被分为3组: 普通表面、表面粗化、表面粗化+边墙腐蚀。每组都有两种结构

一种具有电流阻挡层

另一种没有电流阻挡层。每组中

具有电流阻挡层的LED在20 mA下的正向电压分别为3.156

3.282

3.284 V

略高于不含电流阻挡层的样品(

=3.105

3.205

3.210 V). 但是

具有电流阻挡层的LED的光效和光功率要优于无电流阻挡层的器件

在20 mA下的光功率分别提高了10.20%、12.19%和11.49%。这些性能的提升都要归功于电流阻挡层良好的电流扩展效应

同时电流阻挡层还可以减小p电极下的寄生光吸收。

Abstract

InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LEDs) were fabricated

in which a SiO

current blocking layer (CBL) was inserted underneath the p-pad electrode. Samples were divided into three groups: normal surface

surface roughing

and surface roughing plus side wall etching. Each group had two different structure devices: with and without CBL. In each group

the voltage

at 20 mA for the LEDs with a CBL (

=3.156

3.282

3.284 V) were slightly higher than those of without CBL (

=3.105

3.205

3.210 V). However

the luminous efficiency and the light-output power of the LEDs with CBL were better than those without CBL. At 20 mA current

the output power of the LEDs with a CBL increase 10.20%

12.19%

11.49% compared with those without CBL. It is due to the current spreading effect in CBL devices. The CBL can also reduce parasitic optical absorption in the p-pad electrode.

关键词

Keywords

references

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