InxGa1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系

李国斌; 陈长水; 刘颂豪

doi:10.3788/fgxb20133407.0911

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In_xGa_1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系

器件制备及器件物理 | 更新时间：2020-08-12

- In_xGa_1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系
- Relationship Between In_xGa_1-xN Quantum-well Blue LED’s Photoelectric Properties and Quantum Well Bound State Energy Level
- 发光学报 2013年34卷第7期页码：911-917
- 作者机构：
  
  华南师范大学广东省微纳光子功能材料与器件重点实验室激光生命科学教育部重点实验室, 广东广州 510631
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60878063)();广东省自然科学基金(10251063101000001,8251063101000006)资助项目()
- DOI：10.3788/fgxb20133407.0911
  中图分类号： O484.4
- 收稿日期：2013-04-25，
  
  修回日期：2013-05-24，
  
  纸质出版日期：2013-07-10
- 稿件说明：
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李国斌, 陈长水, 刘颂豪. InxGa1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系[J]. 发光学报, 2013,34(7): 911-917

LI Guo-bin, CHEN Chang-shui, LIU Song-hao. Relationship Between InxGa1-xN Quantum-well Blue LED’s Photoelectric Properties and Quantum Well Bound State Energy Level[J]. Chinese Journal of Luminescence, 2013,34(7): 911-917
李国斌, 陈长水, 刘颂豪. InxGa1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系[J]. 发光学报, 2013,34(7): 911-917 DOI： 10.3788/fgxb20133407.0911.

LI Guo-bin, CHEN Chang-shui, LIU Song-hao. Relationship Between InxGa1-xN Quantum-well Blue LED’s Photoelectric Properties and Quantum Well Bound State Energy Level[J]. Chinese Journal of Luminescence, 2013,34(7): 911-917 DOI： 10.3788/fgxb20133407.0911.

摘要

运用软件模拟和理论计算的方法分析了量子阱宽度的变化对量子阱束缚态能级与光电性能产生的影响

建立了束缚态分裂能级理论模型。分析结果表明:当量子阱宽较窄时

极化效应导致的能带弯曲是光谱红移的主要原因

而电子泄漏是导致效率下降的主要原因;当阱宽较大时

能级填充是导致光谱红移的主要原因

俄歇复合与载流子离域是导致效率下降的主要原因。由本文得出

当量子阱宽为2.5~3.5 nm时

InGaN/GaN发光二极管获得最大内量子效率与发光效率。

Abstract

The software simulation and theoretical calculations are used to analysis the relationship between In

N quantum well blue LED's photoelectric properties and quantum well bound state energy level. A bound state split level model is established. When the quantum well thickness is narrower

the band bending caused by the polarization effects is the main reason for the spectral red-shift

and electron leakage is the main reason for efficiency droop. But as the well width increase

level filling is the main reason for the red-shift of spectrum

Auger recombination and carrier delocalization are the main reason for lower efficiency. By this article

the optimization quantum well width for InGaN/GaN light-emitting diodes can be obtained. The maximum internal quantum efficiency and luminous efficiency can be obtained when the optimization quantum well width is 2.5~3.5 nm.

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references

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