PVK空穴传输层对Ndq3近红外发光二极管性能的影响

陈义鹏; 辛传祯; 罗程远; 王丽师; 葛林; 张晓松; 徐建萍; 李岚

doi:10.3788/fgxb20133407.0888

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PVK空穴传输层对Ndq₃近红外发光二极管性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- PVK空穴传输层对Ndq₃近红外发光二极管性能的影响
- Influence of PVK Hole Transport Layer on Ndq₃ Near-infrared Organic Light Emitting Diodes
- 发光学报 2013年34卷第7期页码：888-893
- 作者机构：
  
  天津理工大学材料物理研究所显示材料与光电器件省部共建教育部重点实验室天津,300384
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60977035,60907021)();天津市自然科学基金(11JCYBJC00300)();科技创新体系及条件平台建设计划(10SYSYJC281
- DOI：10.3788/fgxb20133407.0888
  中图分类号： TN383+.1
- 收稿日期：2013-04-18，
  
  修回日期：2013-05-06，
  
  纸质出版日期：2013-07-10
- 稿件说明：
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陈义鹏, 辛传祯, 罗程远, 王丽师, 葛林, 张晓松, 徐建萍, 李岚. PVK空穴传输层对Ndq3近红外发光二极管性能的影响[J]. 发光学报, 2013,34(7): 888-893

CHEN Yi-peng, XIN Chuan-zhen, LUO Cheng-yuan, WANG Li-shi, GE-Lin, ZHANG Xiao-song, XU Jian-ping, LI Lan. Influence of PVK Hole Transport Layer on Ndq3 Near-infrared Organic Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2013,34(7): 888-893
陈义鹏, 辛传祯, 罗程远, 王丽师, 葛林, 张晓松, 徐建萍, 李岚. PVK空穴传输层对Ndq3近红外发光二极管性能的影响[J]. 发光学报, 2013,34(7): 888-893 DOI： 10.3788/fgxb20133407.0888.

CHEN Yi-peng, XIN Chuan-zhen, LUO Cheng-yuan, WANG Li-shi, GE-Lin, ZHANG Xiao-song, XU Jian-ping, LI Lan. Influence of PVK Hole Transport Layer on Ndq3 Near-infrared Organic Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2013,34(7): 888-893 DOI： 10.3788/fgxb20133407.0888.

摘要

以PEDOT:PSS作为空穴注入层

聚合物PVK作为空穴传输层

制备了结构为ITO/PEDOT:PSS/PVK/8-羟基喹啉钕(Ndq

)/Al的近红外OLED

研究了PVK与PEDOT:PSS功能层对器件

I-V

特性和EL光谱的影响。结果显示

在EL光谱中的905

1 064

1 340 nm处均观察到了荧光发射

分别对应于Nd

的

3/2

9/2

、

3/2

11/2

和

3/2

13/2

能级跃迁。与参考器件对比分析认为

PEDOT:PSS高的导电性降低了器件的串联电阻

增大了器件的工作电流;PVK与PEDOT:PSS共同降低了空穴的注入势垒

实现了Ndq

发光层区域的载流子的注入平衡并改善了器件的发射强度。此外

PVK有效降低了ITO电极表面粗糙度

也是器件性能提高的原因之一。

Abstract

A three-layered near-infrared OLED with structure of ITO/PEDOT:PSS/PVK/neodymium tris-(8-hydroxyquinoline) (Ndq

)/Al was fabricated

in which poly(N-vinylcarbazole) (PVK) was hole transport layer

and poly(3

4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) was hole injection layer. The EL spectrum shows three emission peaks at 905

1 064

1 340 nm in the near-infrared range which are correspond to Nd

transitions of

3/2

9/2

3/2

11/2

3/2

13/2

respectively. The influence mechanism of functional layers was discussed with help of

I-V

curves

in reference with single layer device (ITO/Ndq

/Al) and double layer device (ITO/PVK/Ndq

/Al). The increase in device current corresponding to the reduction of the series resistance was observed and was related to the high conductivity of PEDOT:PSS layer. The joint action on the hole injection barrier by PVK and PEDOT:PSS was contributed to the improvement of the charge carriers balance of device and EL emission intensity. Also

the decrease of the ITO surface roughness was realized as one of the key issue for the performance improvement.

关键词

Keywords

references

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