介电体围绕下绳束状碳纳米管的场发射特性

高见; 佟钰; 夏枫; 刘俊秀; 曾尤

doi:10.3788/fgxb20133407.0882

您当前的位置：

首页 >

文章列表页 >

介电体围绕下绳束状碳纳米管的场发射特性

器件制备及器件物理 | 更新时间：2020-08-12

- 介电体围绕下绳束状碳纳米管的场发射特性
- Field Emission Characteristics of Single Wall Carbon Nanotube Rope at The Presence of Dielectric Medium
- 发光学报 2013年34卷第7期页码：882-887
- 作者机构：
  
  1. 沈阳建筑大学材料科学与工程学院,辽宁沈阳,110168
  2. 沈阳材料科学国家实验室中国科学院金属研究所, 辽宁沈阳 110016
- 作者简介：
- 基金信息：
  
  教育部留学归国人员科研启动基金();辽宁省教育厅科学项目计划(L2010446)();辽宁省教育厅优秀人才项目(LJQ2011060)资助项目()
- DOI：10.3788/fgxb20133407.0882
  中图分类号： TN105+.1
- 收稿日期：2013-03-03，
  
  修回日期：2013-05-14，
  
  纸质出版日期：2013-07-10
- 稿件说明：
移动端阅览
高见, 佟钰, 夏枫, 刘俊秀, 曾尤. 介电体围绕下绳束状碳纳米管的场发射特性[J]. 发光学报, 2013,34(7): 882-887

GAO Jian, TONG Yu, XIA Feng, LIU Jun-xiu, ZENG You. Field Emission Characteristics of Single Wall Carbon Nanotube Rope at The Presence of Dielectric Medium[J]. Chinese Journal of Luminescence, 2013,34(7): 882-887
高见, 佟钰, 夏枫, 刘俊秀, 曾尤. 介电体围绕下绳束状碳纳米管的场发射特性[J]. 发光学报, 2013,34(7): 882-887 DOI： 10.3788/fgxb20133407.0882.

GAO Jian, TONG Yu, XIA Feng, LIU Jun-xiu, ZENG You. Field Emission Characteristics of Single Wall Carbon Nanotube Rope at The Presence of Dielectric Medium[J]. Chinese Journal of Luminescence, 2013,34(7): 882-887 DOI： 10.3788/fgxb20133407.0882.

摘要

在周边环绕玻璃薄片介电体的作用下

绳束状碳纳米管宏观体的场发射电流发生异常跃迁

同时伴随有场发射电子光斑的横向扩展

导致跃迁后的场发射电流明显高于正常情况。所有观察到的现象均与介电体存在下的电场重新分布和电子轨迹偏离有关。理论分析及随后的场发射测试检验了介电体几何尺寸、间距、介电常数等因素对场发射

I-V

性能的影响。研究结果提供了一种控制Spindt 型场发射体电子发射性能的新的可行途径。

Abstract

An abnormal jump of emission current was observed in a single wall carbon nanotube (SWCNT) rope field emitter

in which two soda-lime glass flakes were set on both sides of SWCNT rope. It gave rise of an apparent enhancement of the emission current after the jump. All these peculiar characteristics of field emission were attributed to the modification of electric field at the presence of glass flakes and its contribution to the selective divergence of electron trajectories. Theoretic analysis and subsequently evidential investigations were carried out to certify the influence of the dimension

separation distance and dielectric constant of the dielectric medium on the I-V characteristics of SWCNT rope

which suggests a feasible way to control the field emission properties from Spindt-type emitters including CNT rope.

关键词

Keywords

references

Xiao Y, Yang J P, Cheng P P, et al. Surface plasmon-enhanced electroluminescence in organic light-emitting diodes incorporating Au nanoparticles[J]. Appl. Phys. Lett., 2012, 100(1):013308-1-3.[2] Li Q, Zhao J, Wang Q, et al. Effect of spacer on white organic light-emitting devices consisted of double light-emitting layers[J]. Chin. J. Lumin.(发光学报), 2012, 33(1):45-49 (in Chinese).[3] Liu F L, Ruden P P, Camphell L H, et al. Exciplex current mechanism for ambipolar bilayer organic light emitting diodes[J]. Appl. Phys. Lett., 2011, 99(12):123301-1-3.[4] Yook K S, Kim O K, Lee J Y. Lifetime study of single layer and stacked white organic light-emitting diodes[J]. Synthetic Met., 2012, 161(10):2671-2681.[5] Han C M, Xie G H, Zhang Z S, et al. A single phosphine oxide host for high-efficiency white organic light-emitting diodes with extremely low operating voltages and reduced efficiency roll-off[J]. Adv. Funct. Mater., 2011, 23(4):2491-2496.[6] Zhang G H, Chou H H, Jiang X Q, et al. Highly efficient organic light-emitting diodes (OLEDs) based on an iridium complex with rigid cyclometalated ligand[J]. Org. Electron., 2010, 11(4):632-640.[7] Fang Z L. Semiconductor Lighting Technology [M] Beijing: Electronics Industry Press, 2010:164.[8] Moraes I R, Schol S, Lussem B, et al. Analysis of chemical degradation mechanism within sky blue phosphorescent organic light emitting diodes by laser-desorption/ionization time-of-flight mass spectrometry[J]. Org. Electron., 2011, 12(2):341-347.[9] Liu C B, Zhao J, Su B, et al. Research progress of Re (I) complexes in OLEDs[J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2012, 27(6):742-751 (in Chinese).[10] Ding L, Zhang F H, Ma Y, et al. Novel microcavity OLEDs with double hole injection layer[J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2011, 26(4):496-500 (in Chinese).[11] Seo H J, Yoo K M, Song M, et al. Deep-blue phosphorescent iridium complexes with picolinic acid N-oxide as the ancillary ligand for high efficiency organic light-emitting diodes[J]. Org. Electron., 2010, 11(4):564-572.[12] Seo C W, Yoon J H, Lee J Y. Engineering of charge transport materials for universal low optimum doping concentration in phosphorescent organic light-emitting diodes[J]. Org. Electron., 2012, 13(2):413-469.[13] Zhu H N, Xu Z, Zhao S L, et al. Influence of well structure on efficiency of organic light-emitting diodes[J]. Acta Phys. Sinica (物理学报), 2010, 59(11):8093-8096 (in Chinese).[14] Gao L Y, Zhao S L, Xu Z, et al. Luminescence characteristics of PVK doped with Ir(Fppy)3[J]. Spectrosc. Spect. Anal.(光谱学与光谱分析), 2011, 31(9):2328-2331 (in Chinese).

浏览量

111

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

碳纳米管/金刚石复合材料的场发射特性

平栅极结构碳纳米管场发射性能实验

基于微纳光纤-单壁碳纳米管可饱和吸收体的被动调Q掺镱光纤激光器

钛基底的纳米金刚石掺混纳米碳管的场发射特性

溶剂热制备锂电池负极材料CNT-ZnFe₂O₄及其电化学性能