分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质

李炳生; SHEN Ai-dong

doi:10.3788/fgxb20133407.0811

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分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质

材料合成及性能 | 更新时间：2020-08-12

- 分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质
- Optical Properties of Zn_xCd_1-xSe/MgSe Quantum Wells Grown on InP Substrate by Molecular Beam Epitaxy
- 发光学报 2013年34卷第7期页码：811-815
- 作者机构：
  
  1. 哈尔滨工业大学基础与交叉科学研究院, 黑龙江哈尔滨 150080
  2. Department of Electrical Engineering, The City College of the City University of New York, New York 10031, USA
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133407.0811
  中图分类号： O484.4
- 收稿日期：2013-04-25，
  
  修回日期：2013-05-19，
  
  纸质出版日期：2013-07-10
- 稿件说明：
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李炳生, SHEN Ai-dong. 分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质[J]. 发光学报, 2013,34(7): 811-815

LI Bing-sheng, SHEN Ai-dong. Optical Properties of ZnxCd1-xSe/MgSe Quantum Wells Grown on InP Substrate by Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2013,34(7): 811-815
李炳生, SHEN Ai-dong. 分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质[J]. 发光学报, 2013,34(7): 811-815 DOI： 10.3788/fgxb20133407.0811.

LI Bing-sheng, SHEN Ai-dong. Optical Properties of ZnxCd1-xSe/MgSe Quantum Wells Grown on InP Substrate by Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2013,34(7): 811-815 DOI： 10.3788/fgxb20133407.0811.

摘要

采用分子束外延技术在(001)取向的InP衬底上外延生长了亚稳态的Zn

Se/MgSe低维量子阱结构

并通过光致发光和子带吸收方法

分析其能带结构。在单量子阱样品制备过程中

高能电子衍射强度振荡表明MgSe可以实现二维生长模式

衍射图样证明其为亚稳态闪锌矿结构。通过引入厚的Zn

Se空间层

抑制了MgSe垒层的相变

并能进一步提高样品的结晶质量

得到高结晶质量的多量子阱结构。通过计算不同阱宽的能带与光致发光实验比较

证明了Zn

Se/MgSe的导带带阶为1.2 eV

价带带阶为0.27 eV。为了进一步验证其能带结构

制备了电子掺杂的Zn

Se/MgSe的多量子阱

观测到半高宽很窄的中红外吸收。利用发光谱确定的带阶计算了量子阱中子带的吸收波长

和实验结果非常吻合。设计了一种双量子阱结构

计算结果显示

通过利用量子阱中的耦合效应

可以实现1.55 m光通信波段的吸收。

Abstract

We studied the band gap structure of Zn

Se/MgSe heterostructure grown on (001) InP substrates by molecular beam epitaxy. In the single quantum well growth of Zn

Se/MgSe

the in situ reflection high energy electron diffraction intensity oscillations and streak patterns demonstrate that zincblende (ZB) MgSe has been formed. Furthermore

with the introduction of thick Zn

Se spacer layers

the ZB MgSe/Zn

Se multi-quantum wells can be obtained. Based on the results of photoluminescence and calculation

the offset for conduction and valence band in MgSe/Zn

Se heterostructure is estimated to be 1.2 eV and 0.27 eV

respectively. Using the estimated value of band offset

the calculated ISB transition energies agree well with results of infrared absorption experiments. With such a large band offset

ISB transitions in this material system could be extended to 1.55 m within an asymmetric double quantum wells with coupling effects.

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references

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