HVPE反应器的环形分隔进口数对生长均匀性的影响

赖晓慧; 左然; 师珺草; 刘鹏; 童玉珍; 张国义

doi:10.3788/fgxb20133406.0797

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HVPE反应器的环形分隔进口数对生长均匀性的影响

发光学应用及交叉前沿 | 更新时间：2020-08-12

- HVPE反应器的环形分隔进口数对生长均匀性的影响
- Effect of Segmented Annular Inlets Number of HVPE Reactor on The GaN Growth Uniformity
- 发光学报 2013年34卷第6期页码：797-802
- 作者机构：
  
  1. 北京大学物理学院宽禁带半导体研究中心北京,100871
  2. 江苏大学能源与动力工程学院,江苏镇江,212013
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61176009)();国家重点基础研究发展计划(2011CB013101)资助项目()
- DOI：10.3788/fgxb20133406.0797
  中图分类号： O47
- 收稿日期：2013-03-06，
  
  修回日期：2013-04-18，
  
  纸质出版日期：2013-06-10
- 稿件说明：
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赖晓慧, 左然, 师珺草, 刘鹏, 童玉珍, 张国义. HVPE反应器的环形分隔进口数对生长均匀性的影响[J]. 发光学报, 2013,34(6): 797-802

LAI Xiao-hui, ZUO Ran, SHI Jun-cao, LIU Peng, TONG Yu-zhen, ZHANG Guo-yi. Effect of Segmented Annular Inlets Number of HVPE Reactor on The GaN Growth Uniformity[J]. Chinese Journal of Luminescence, 2013,34(6): 797-802
赖晓慧, 左然, 师珺草, 刘鹏, 童玉珍, 张国义. HVPE反应器的环形分隔进口数对生长均匀性的影响[J]. 发光学报, 2013,34(6): 797-802 DOI： 10.3788/fgxb20133406.0797.

LAI Xiao-hui, ZUO Ran, SHI Jun-cao, LIU Peng, TONG Yu-zhen, ZHANG Guo-yi. Effect of Segmented Annular Inlets Number of HVPE Reactor on The GaN Growth Uniformity[J]. Chinese Journal of Luminescence, 2013,34(6): 797-802 DOI： 10.3788/fgxb20133406.0797.

摘要

利用FLUENT软件对3种环形分隔进口(4环、8环、12环)的氢化物气相外延(HVPE)反应器的生长均匀性进行了二维数值模拟研究。分别考虑输运模型和输运-生长模型

模拟过程保持相同的GaCl、NH

及N

气体进口流量。结果显示:在只考虑输运的模型中

反应室流动均匀性随着进口环数的增多而改善。8环进口时

衬底上方温度分布最均匀;4环进口时

衬底上方的GaCl浓度较高

但均匀性最差

Ⅴ/Ⅲ比也较低;8环及12环进口可得到均匀的GaCl浓度分布及较高的Ⅴ/Ⅲ比。在包括输运和GaN生长的模型中

尽管8环进口反应器衬底上方的GaCl浓度低于12环进口反应器

却因其较薄的边界层厚度而导致较高的生长速率

并且生长均匀性较高。因此

8环进口反应室更有利于GaN的HVPE生长。

Abstract

Two-dimensional numerical simulation was performed by FLUENT for the HVPE reactor with different segmented annular inlets

considering the transport model and transport-growth model

with the flow rates of GaCl

and N

kept constant. When only considering the gas transport

the results show that the flow uniformity is improved by increasing the number of annular inlets and the 8 annular inlets reactor can give the most uniform temperature distribution on the substrate. The GaCl concentration on the substrate of 4 annular inlets is high

but the uniformity is poor

and the Ⅴ/Ⅲ ratio is also low. The 8 and 12 annular inlets can give uniform GaCl concentration distribution on the substrate

and high Ⅴ/Ⅲ ratio. When the GaN growth rate is also considered

the results show that the growth rate for 8 inlets is higher than that of the 12 inlets because of the thinner boundary layer of the GaCl concentration

although the GaCl concentration for 8 annular inlets is lower than that of the 12 annular inlets on the substrate. Thus

the 8 annular inlets is more advantageous to the GaN HVPE growth.

关键词

Keywords

references

Hemmingsson C, Pozina G, Heuken M, et al.Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor[J]. J. Cryst. Growth,2008, 319(5):906-910.[2] Zhang L, Shao Y L, Wu Y Z, et al.Simulation of gas distribution in HVPE reactor and influence of GaCl carrier gas flow rate on the GaN crystal growth[J]. J. Synth. Cryst.(人工晶体学报), 2011, 40(4):854-857 (in Chinese).[3] Wang N W, Stepanov S I. Deposition technique for producing high quality compound semiconductor materials:US, 7906411 B2. 2011-03-15.[4] Monemar B, Larsson H, Hemmingsson C, et al.Growth of thick GaN layers with hydride vapour phase epitaxy[J]. J. Cryst. Growth, 2005, 281(1):17-31.[5] Dam C E C, Grzegorczyk A P, Hageman P R, et al.The effect of HVPE reactor geometry on GaN growth rate-experiments versus simulations[J]. J. Cryst. Growth,2004, 271(1/2):192-199.[6] Safvi S A, Perkins N R, Horton M N, et al.Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy[J]. J. Cryst. Growth, 1997, 182(3):233-240.[7] Ma P, Duan Y, Wei T B, et al.Theoretical simulation of vertical HVPE reactor and GaN thick film growth[J]. Chin. J. Semicond.(半导体学报),2007, 28(z1):253-256 (in Chinese).[8] Zhao C Z, Xiu X Q, Zhang R, et al.Simulation study on GaN growth of the vertical HVPE reactor[J]. Chin. Phys. Sci. (中国科学), 2010, 40(1):82-85 (in Chinese).[9] Cai D, Zheng L L, Zhang H, et al.Modeling of gas phase and surface reactions in an aluminum nitride growth system[J]. J. Cryst. Growth, 2006, 293(1):136-145.[10] Li J. Study on Free-standing GaN Growth by HVPE. Changchun: Changchun University of Science and Technology, 2009 (in Chinese).

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