基于酞菁钯和C60的异质结有机光敏场效应管

陈德强; 姚博; 吕文理; 高鹏杰; 彭应全

doi:10.3788/fgxb20133405.0629

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基于酞菁钯和C₆₀的异质结有机光敏场效应管

器件制备及器件物理 | 更新时间：2020-08-12

- 基于酞菁钯和C₆₀的异质结有机光敏场效应管
- Heterojunction Photoresponsive Organic Field-effect Transistors Based on Palladium Phthalocyanine and C₆₀
- 发光学报 2013年34卷第5期页码：629-633
- 作者机构：
  
  1. 兰州大学物理学院微电子研究所,甘肃兰州,730000
  2. 兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州,730000
- 作者简介：
- 基金信息：
  
  国家自然科学基金(1097407)();教育部博士点基金(20110211110005)资助项目()
- DOI：10.3788/fgxb20133405.0629
  中图分类号： TN386
- 收稿日期：2013-02-08，
  
  修回日期：2013-03-08，
  
  网络出版日期：2013-03-22，
  
  纸质出版日期：2013-05-10
- 稿件说明：
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陈德强, 姚博, 吕文理, 高鹏杰, 彭应全. 基于酞菁钯和C60的异质结有机光敏场效应管[J]. 发光学报, 2013,34(5): 629-633

CHEN De-qiang, YAO Bo, LYU Wen-li, GAO Peng-jie, PENG Ying-quan. Heterojunction Photoresponsive Organic Field-effect Transistors Based on Palladium Phthalocyanine and C60[J]. Chinese Journal of Luminescence, 2013,34(5): 629-633
陈德强, 姚博, 吕文理, 高鹏杰, 彭应全. 基于酞菁钯和C60的异质结有机光敏场效应管[J]. 发光学报, 2013,34(5): 629-633 DOI： 10.3788/fgxb20133405.0629.

CHEN De-qiang, YAO Bo, LYU Wen-li, GAO Peng-jie, PENG Ying-quan. Heterojunction Photoresponsive Organic Field-effect Transistors Based on Palladium Phthalocyanine and C60[J]. Chinese Journal of Luminescence, 2013,34(5): 629-633 DOI： 10.3788/fgxb20133405.0629.

摘要

采用酞菁钯(PdPc)和C

两种有机半导体材料

通过真空热蒸镀法以不同的沉积顺序制备了两种不同结构的平面异质结有机光敏场效应管

并对这两种结构器件的光敏特性进行比较。在波长655 nm、光强100 mW/cm

的光照条件下

结构为n

-Si/SiO

/PdPc/C

/Al(S

D) (PdPc/C

-OFET)器件的最大光暗比为210

光响应度为3 mA/W;而结构为n

-Si/SiO

/PdPc/Al(S

D) (C

/PdPc-OFET)器件的最大光暗比为310

光响应度为11mA/W。实验结果表明C

/PdPc-OFET可以获得更好的光敏特性。

Abstract

Heterojunction photoresponsive organic field-effect transistors (PhotOFETs) based on palladium phthalocyanine (PdPc) and C

were fabricated. PhotOFETs with the structure n

-Si/SiO

/PdPc/Al(S

D) (C

/PdPc-OFET) exhibit a higher photosensitivity and photoresponsivity than that with the structure n

-Si/SiO

/PdPc/C

/Al(S

D) (PdPc/C

-OFET). The origin for this result is the high mobility of C

and the well-matched LUMO levels between PdPc and C

. The maximum photosensitivity and the photoresponsivity of the C

/PdPc-OFET are 310

and 11 mA/W while those of PdPc/C

-OFET are 210

and 3 mA/W under the light source with a power density of 100 mW/cm

and emission centered at 655 nm.

关键词

Keywords

references

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