氧化石墨烯作为共蒸镀掺杂材料在OLED中的应用

郭颂; 杜晓刚; 刘晓云; 刘慧慧; 王华; 郝玉英; 许并社; 赵建国; 郭鹍鹏

doi:10.3788/fgxb20133405.0595

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氧化石墨烯作为共蒸镀掺杂材料在OLED中的应用

器件制备及器件物理 | 更新时间：2020-08-12

- 氧化石墨烯作为共蒸镀掺杂材料在OLED中的应用
- Graphene Oxide as Doping Material for Assembling OLEDs via Thermal Co-evaporation with NPB and Alq₃
- 发光学报 2013年34卷第5期页码：595-599
- 作者机构：
  
  1. 太原理工大学物理与光电工程学院,山西太原,030024
  2. 太原理工大学新材料工程技术研究中心,山西太原,030024
  3. 太原理工大学新材料界面科学与工程教育部重点实验室,山西太原,030024
  4. 山西大同大学碳材料研究所,山西大同,037009
- 作者简介：
- 基金信息：
  
  教育部长江学者与创新团队发展项目(IRT0972)();国家国际科技合作专项(2012DFR50460)();国家自然科学基金(21071108,21101111,61
- DOI：10.3788/fgxb20133405.0595
  中图分类号： TN383+.1
- 收稿：2013-01-08，
  
  修回：2013-4-1，
  
  网络出版：2013-03-08，
  
  纸质出版：2013-05-10
- 稿件说明：
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郭颂, 杜晓刚, 刘晓云, 刘慧慧, 王华, 郝玉英, 许并社, 赵建国, 郭鹍鹏. 氧化石墨烯作为共蒸镀掺杂材料在OLED中的应用[J]. 发光学报, 2013,34(5): 595-599

GUO Song, DU Xiao-gang, LIU Xiao-yun, LIU Hui-hui, WANG Hua, HAO Yu-ying, XU Bing-she, ZHAO Jian-guo, GUO Kun-peng. Graphene Oxide as Doping Material for Assembling OLEDs via Thermal Co-evaporation with NPB and Alq3[J]. Chinese Journal of Luminescence, 2013,34(5): 595-599
郭颂, 杜晓刚, 刘晓云, 刘慧慧, 王华, 郝玉英, 许并社, 赵建国, 郭鹍鹏. 氧化石墨烯作为共蒸镀掺杂材料在OLED中的应用[J]. 发光学报, 2013,34(5): 595-599 DOI： 10.3788/fgxb20133405.0595.

GUO Song, DU Xiao-gang, LIU Xiao-yun, LIU Hui-hui, WANG Hua, HAO Yu-ying, XU Bing-she, ZHAO Jian-guo, GUO Kun-peng. Graphene Oxide as Doping Material for Assembling OLEDs via Thermal Co-evaporation with NPB and Alq3[J]. Chinese Journal of Luminescence, 2013,34(5): 595-599 DOI： 10.3788/fgxb20133405.0595.

摘要

通过共蒸镀掺杂的方法

分别用氧化石墨烯和NPB掺杂作为空穴传输层以及氧化石墨烯和Alq

掺杂作为电子传输层和发光层

制备了两种不同的有机电致发光器件。器件性能测试结果表明:相对于未掺杂的参比器件

氧化石墨烯与NPB共蒸镀掺杂的器件性能降低

与Alq

共蒸镀掺杂的器件性能提高。其中

氧化石墨烯掺杂量为Alq

的10%时

器件发光亮度为掺杂前的1.2倍

电流效率为掺杂前的2倍。这一工作为进一步提高OLED性能提供了新的途径。

Abstract

Graphene oxide was explored as doping material that doped into hole transporting layer (NPB) and electron transporting layer (Alq

) via thermal co-evaporation respectively to fabricate two types of OLED devices. The experimental results indicated that thermal co-evaporation of graphene oxide with Alq

act as electron transporting layer can improve the device performance while with NPB as hole transporting layer decrease the performance. And it turns out that device doped 10% graphene oxide in Alq

layer exhibited 1.2 fold higher of luminance and 2 fold higher of current efficiency than that of updoped one.

关键词

Keywords

references

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