不同形状的电流阻挡层对GaN基LED光效的影响

曹伟伟; 朱彦旭; 郭伟玲; 刘建朋; 俞鑫; 邓叶; 徐晨

doi:10.3788/fgxb20133404.0480

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不同形状的电流阻挡层对GaN基LED光效的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 不同形状的电流阻挡层对GaN基LED光效的影响
- Improving Luminous Efficacy of The GaN-based Light-emitting Diodes by Using Different Shapes of Current Blocking Layer
- 发光学报 2013年34卷第4期页码：480-484
- 作者机构：
  
  北京工业大学光电子技术省部共建教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
  
  北京市教委基金(KM201210005004)();国家自然科学基金(61107026)();国家科技支撑计划 (2011BAE01B14)资助项目()
- DOI：10.3788/fgxb20133404.0480
  中图分类号： TN383.1
- 收稿日期：2012-11-25，
  
  修回日期：2013-01-07，
  
  网络出版日期：2012-11-30，
  
  纸质出版日期：2013-04-10
- 稿件说明：
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曹伟伟, 朱彦旭, 郭伟玲, 刘建朋, 俞鑫, 邓叶, 徐晨. 不同形状的电流阻挡层对GaN基LED光效的影响[J]. 发光学报, 2013,34(4): 480-484

CAO Wei-wei, ZHU Yan-xu, Guo WEI-ling, LIU Jian-peng, YU Xin, DENG Ye, XU Chen. Improving Luminous Efficacy of The GaN-based Light-emitting Diodes by Using Different Shapes of Current Blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(4): 480-484
曹伟伟, 朱彦旭, 郭伟玲, 刘建朋, 俞鑫, 邓叶, 徐晨. 不同形状的电流阻挡层对GaN基LED光效的影响[J]. 发光学报, 2013,34(4): 480-484 DOI： 10.3788/fgxb20133404.0480.

CAO Wei-wei, ZHU Yan-xu, Guo WEI-ling, LIU Jian-peng, YU Xin, DENG Ye, XU Chen. Improving Luminous Efficacy of The GaN-based Light-emitting Diodes by Using Different Shapes of Current Blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(4): 480-484 DOI： 10.3788/fgxb20133404.0480.

摘要

电流阻挡层(CBL)可以改善发光二极管(LED)的发光效率和输出光功率

其形状对电流的阻挡作用有影响。本文通过等离子体增强化学气相沉积设备(PECVD)在InGaN/GaN多量子阱外延片上制备了SiO

薄膜

并腐蚀出不同结构作为电流阻挡层:A组形状与P电极形状相同

B组为Y形CBL

C组为点状CBL。通过对这3组芯片与常规芯片的对比

发现加入CBL对小功率LED的电压特性影响比较小

并且电流阻挡层形状与金属电极形状相同时对光效的提高最大

可以提高14.6%。

Abstract

Current blocking layer (CBL) was used to improve light output power and luminous efficacy of the LEDs.The structure of CBL can block the current from entering the active region below the top contact. The shape of current blocking layer impacts properties of LEDs

so we fabricate different kinds of SiO

CBL by plasma enhanced chemical vapor deposition (PECVD)and etched. There are 3 shapes in the experiment: Group A has a whole structure of CBL which approximately has a same shape of top metal contact laver

group B is a Y-shaped which located on top of the upper confinement

and group C only has a point-shaped structure under the metal pad electrode. According to the experiment

we obtain that the difference of voltage between different groups is not too large in low power LEDs

when CBL and P-electrode have the same shape

the LED has the best properties and by 14.6% compared to that of conventional LEDs.

关键词

Keywords

references

Yu L Y, Niu P J, Xing H Y, et al. Influence of electron beam irradiation on the luminescence properties of GaN-based LED [J]. Chin. J. Lumin.(发光学报), 2012, 33(8):869-872 (in Chinese).[2] Jiang H X, Jin S X, Li J, et al. Ⅲ-nitride blue micro displays [J]. Appl. Phys. Lett., 2001, 78(9):1303-1305.[3] Lin Y C, Chang S J, Su Y K, et al. High power nitride based light emitting diodes with Ni/ITO p-type contacts [J]. Solid-State Electronics, 2003, 47(9):1565-1568.[4] Yin C A, Zhao C J, Liu X Y, et al. Development of white light emitting diode [J]. Chin. J. Lumin.(发光学报), 2000, 21(4):380-382 (in Chinese).[5] Zhou Z, Feng S W, Zhang G C, et al. The aging characteristics of high-power GaN-based white light-emitting diodes [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1046-1050 (in Chinese).[6] Wang W J, Li X F, Shi J F, et al. Effect of ITO interface modulation layer on the performances of LEDs with Ga-doped ZnO electrode [J]. Chin. J. Lumin.(发光学报), 2012, 33(2):210-215 (in Chinese).[7] Liu J P, Zhu Y X, Guo W L, et al. The effect of ITO annealing on electrical characteristic of GaN based LED [J]. Acta Phys. Sinica (物理学报), 2012, 61(13):425-431 (in Chinese).[8] Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J]. Appl. Phys. Lett., 2004, 84(6):855-857.[9] Huh C, Lee J, Kim D, et al. Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer [J]. J. Appl. Phys., 2002, 92(5):2248-2250.[10] Tsai M A, Yu P C, Chen J R, et al. Improving light output power of the GaN-based vertical-injection light-emitting diodes by Mg+ implanted current blocking layer [J]. IEEE Photon. Technol. Lett., 2009, 21(11):688-690.[11] Kim H, Park S J, Hwang H. Effects of current spreading on the performance of GaN-based light-emitting diodes [J]. IEEE Transactions on Electron Devices, 2001, 48(6):1065-1069.[12] Pan H P, Huang L W, Li R, et al. Finite element model of GaN based LED and the optimization of the mesa structure [J]. Chin. J. Lumin.(发光学报), 2007, 28(1):114-120 (in Chinese).[13] Ai W W, Guo X, Liu B, et al. Effect of current crowding on the reliability of GaN-based LEDs [J]. Laser & Infrared (激光与红外), 2006, 36(6):491-494 (in Chinese).[14] Schubert E F. Light-emitting Diodes [M]. 2nd ed. New York: Cambridge University Press, 2006:138.

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